# RS1L120GNTB

**ROHM Semicon** · MOSFETs · HSOP-8

RS1L120GNTB from ROHM Semicon, in a HSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the Nch MOSFET, connected internally with pins 2 and 3. |
| 2 | Source | passive | Source terminal of the Nch MOSFET, connected internally with pins 1 and 3. |
| 3 | Source | passive | Source terminal of the Nch MOSFET, connected internally with pins 1 and 2. |
| 4 | Gate | input | Gate terminal with ±20V maximum gate-source voltage and 1.3 to 2.7V threshold at ID=200µA. |
| 5 | Drain | passive | Drain terminal, 60V maximum drain-source voltage, connected internally with pins 6, 7 and 8. |
| 6 | Drain | passive | Drain terminal, 60V maximum drain-source voltage, connected internally with pins 5, 7 and 8. |
| 7 | Drain | passive | Drain terminal, 60V maximum drain-source voltage, connected internally with pins 5, 6 and 8. |
| 8 | Drain | passive | Drain terminal, 60V maximum drain-source voltage, connected internally with pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | HSOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS |  |  | 60 | V | Ta = 25°C | 1 |
| Continuous drain current | ID | -36 |  | 36 | A | Tc = 25°C, limited only by maximum temperature | 1 |
| Continuous drain current | ID | -12 |  | 12 | A | Ta = 25°C | 1 |
| Pulsed drain current | IDP | -48 |  | 48 | A | Pw≦10μs, Duty cycle≦1% | 1 |
| Gate-Source voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Avalanche current, single pulse | IAS |  |  | 12 | A | L ≒ 0.1mH, VDD = 30V, RG = 25Ω, Starting Tj = 25℃ | 1 |
| Avalanche energy, single pulse | EAS |  |  | 10 | mJ | L ≒ 0.1mH, VDD = 30V, RG = 25Ω, Starting Tj = 25℃ | 1 |
| Power dissipation | PD |  |  | 27 | W | Tc = 25°C | 1 |
| Power dissipation | PD |  |  | 3 | W | Mounted on a Cu board (40×40×0.8mm) | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Operating junction and storage temperature range | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction-case | RthJC |  |  | 4.6 | ℃/W | Tc=25℃ | 2 |
| Thermal resistance, junction-ambient | RthJA |  |  | 41.7 | ℃/W | Mounted on a Cu board (40×40×0.8mm) | 2 |
| Drain-Source breakdown voltage | V(BR)DSS | 60 |  |  | V | VGS = 0V, ID = 1mA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 10 | μA | VDS = 60V, VGS = 0V | 2 |
| Gate-Source leakage current | IGSS | -10 |  | 10 | μA | VGS = ±20V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 1.3 |  | 2.7 | V | VDS = VGS, ID = 200μA | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 9.3 | 12.7 | mΩ | VGS = 10V, ID = 12A, pulsed | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 13.4 | 19.8 | mΩ | VGS = 4.5V, ID = 12A, pulsed | 2 |
| Forward transfer admittance | /Yfs/ | 12 |  |  | S | VDS = 5V, ID = 12A, pulsed | 2 |
| Continuous forward current (body diode) | IS |  |  | 2.5 | A | Ta = 25℃ | 3 |
| Pulse forward current (body diode) | ISP |  |  | 48 | A | Pw≦10μs, Duty cycle≦1% | 3 |
| Forward voltage (body diode) | VSD |  |  | 1.2 | V | VGS = 0V, IS = 2.5A, pulsed | 3 |
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj |  | 60 |  | mV/℃ | ID = 1mA, referenced to 25℃ | 2 |
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj |  | -5.6 |  | mV/℃ | ID = 1mA, referenced to 25℃ | 2 |
| Gate resistance | RG |  | 1.7 |  | Ω | f=1MHz, open drain | 2 |
| Input capacitance | Ciss |  | 1330 |  | pF | VGS = 0V, VDS = 30V, f = 1MHz | 3 |
| Output capacitance | Coss |  | 260 |  | pF | VGS = 0V, VDS = 30V, f = 1MHz | 3 |
| Reverse transfer capacitance | Crss |  | 65 |  | pF | VGS = 0V, VDS = 30V, f = 1MHz | 3 |
| Turn-on delay time | td(on) |  | 16 |  | ns | VDD ≒ 30V, VGS = 10V, ID = 6A, RL ≒ 5Ω, RG = 10Ω | 3 |
| Rise time | tr |  | 7 |  | ns | VDD ≒ 30V, VGS = 10V, ID = 6A, RL ≒ 5Ω, RG = 10Ω | 3 |
| Turn-off delay time | td(off) |  | 40 |  | ns | VDD ≒ 30V, VGS = 10V, ID = 6A, RL ≒ 5Ω, RG = 10Ω | 3 |
| Fall time | tf |  | 8 |  | ns | VDD ≒ 30V, VGS = 10V, ID = 6A, RL ≒ 5Ω, RG = 10Ω | 3 |
| Total gate charge | Qg |  | 26 |  | nC | VDD ≒ 30V, ID = 12A, VGS = 10V | 3 |
| Total gate charge | Qg |  | 14 |  | nC | VDD ≒ 30V, ID = 12A, VGS = 4.5V | 3 |
| Gate-Source charge | Qgs |  | 5.6 |  | nC | VDD ≒ 30V, ID = 12A | 3 |
| Gate-Drain charge | Qgd |  | 5 |  | nC | VDD ≒ 30V, ID = 12A | 3 |
| Reverse recovery time | trr |  | 30 |  | ns | IS = 12A, VGS=0V, di/dt = 100A/μs | 3 |
| Reverse recovery charge | Qrr |  | 29 |  | nC | IS = 12A, VGS=0V, di/dt = 100A/μs | 3 |

## CAD (KiCad official)

- Symbol: `RS1L120GNTB`
- Footprint: `Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm`
- 3D model: HSOP-8 (KiCad packages3D, STEP)
- 3D model files: `rs1l120gntb-etched.step` / `rs1l120gntb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs1l120gntb.step` / `rs1l120gntb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](docs/rs1l120gntb-datasheet.pdf) (13 pp, sha256 `f4691a3a946bada9`, retrieved 2026-10-31, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rs1l120gntb-datasheet.pdf)