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RS1G86XF5

Jiangsu RUNIC Tech · Logic Gates · SOT23-5

RS1G86XF5 from Jiangsu RUNIC Tech, in a SOT23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A input Input A of the single 2-input exclusive-OR gate; inputs accept voltages up to 5.5V, and the logic thresholds scale with VCC (VIH/VIL are specified per VCC range).
2 B input Input B of the single 2-input exclusive-OR gate; inputs accept voltages up to 5.5V, and the logic thresholds scale with VCC (VIH/VIL are specified per VCC range).
3 GND power_in Ground pin for the device.
4 Y output Output Y of the exclusive-OR function (Y = A̅B + AB̅); the output provides high drive of ±24mA at VCC=3.0V and is disabled when the device is powered down (Ioff).
5 VCC power_in Supply pin; operating supply range is 1.65V to 5.5V (data retention down to 1.5V).

Key specifications

Parameter Value
Manufacturer Jiangsu RUNIC Tech
Package SOT23-5
Category Logic
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage (operating) VCC 1.65 5.5 V Operating 6
Supply voltage (data retention only) VCC 1.5 V Data retention only 6
High-level input voltage VIH 1.7 V VCC=2.3V to 2.7V 6
High-level input voltage VIH 2.2 V VCC=3V to 3.6V 6
Low-level input voltage VIL 0.3 V VCC=2.3V to 2.7V 6
Low-level input voltage VIL 0.4 V VCC=3V to 3.6V 6
Input voltage VI 0 5.5 V 6
Output voltage VO 0 V 6
Input transition rise or fall time tr, tf 20 ns/V VCC=1.8V±0.15V, 2.5V±0.2V 6
Input transition rise or fall time tr, tf 10 ns/V VCC=3.3V±0.3V 6
Input transition rise or fall time tr, tf 5 ns/V VCC=5V±0.5V 6
Operating temperature TA -40 125 °C 6
High-level output voltage VOH 1.2 V IOH = -4mA, VCC=1.65V 6
High-level output voltage VOH 1.9 V IOH = -8mA, VCC=2.3V 6
High-level output voltage VOH 2.4 V IOH = -16mA, VCC=3V 6
High-level output voltage VOH 2.3 V IOH = -24mA, VCC=3V 6
High-level output voltage VOH 3.8 V IOH = -32mA, VCC=4.5V 6
Low-level output voltage VOL 0.1 V IOL = 100μA, VCC=1.65V to 5.5V 6
Low-level output voltage VOL 0.45 V IOL = 4mA, VCC=1.65V 6
Low-level output voltage VOL 0.3 V IOL = 8mA, VCC=2.3V 6
Low-level output voltage VOL 0.4 V IOL = 16mA, VCC=3V 6
Low-level output voltage VOL 0.55 V IOL = 24mA, VCC=3V 6
Input leakage current (A or B inputs) II -1 1 µA VI=5.5V or GND, VCC 0V to 5.5V, +25C 6
Input leakage current (A or B inputs) II -5 5 µA VI=5.5V or GND, VCC 0V to 5.5V, Full temperature range 6
Power-off leakage current Ioff -1 1 µA VI or VO=5.5V, VCC=0V, +25C 6
Power-off leakage current Ioff -10 10 µA VI or VO=5.5V, VCC=0V, Full temperature range 6
Quiescent supply current ICC 0.1 1 µA VI=5.5V or GND, IO=0, VCC 1.65V to 5.5V, +25C 6
Quiescent supply current ICC 10 µA VI=5.5V or GND, IO=0, VCC 1.65V to 5.5V, Full temperature range 6
Additional quiescent supply current per input ΔICC 500 µA One input at VCC-0.6V, other inputs at VCC or GND, VCC 3V to 5.5V, Full temperature range 6
Propagation delay tpd 14.2 ns VCC=1.8V±0.15V, CL=30pF, RL=1kΩ 7
Propagation delay tpd 11.1 ns VCC=2.5V±0.2V, CL=30pF, RL=500Ω 7
Propagation delay tpd 6.7 ns VCC=3.3V±0.3V, CL=50pF, RL=500Ω 7
Propagation delay tpd 5.3 ns VCC=5V±0.5V, CL=50pF, RL=500Ω 7
Input capacitance Ci 4 pF VCC=3.3V, VI=VCC or GND 7
Power dissipation capacitance Cpd 20 pF VCC=1.8V, f=10MHz 7
Power dissipation capacitance Cpd 21 pF VCC=2.5V, f=10MHz 7
Power dissipation capacitance Cpd 22 pF VCC=3.3V, f=10MHz 7
Power dissipation capacitance Cpd 25 pF VCC=5V, f=10MHz 7
Supply voltage range VCC -0.5 6.5 V 4
Input voltage range VI -0.5 6.5 V 4
Voltage range applied to any output in high-impedance or power-off state VO -0.5 6.5 V 4
Voltage range applied to any output in high or low state VO -0.5 V 4
Input clamp current IIK -50 mA VI<0 4
Output clamp current IOK -50 mA VO<0 4
Continuous output current IO -50 50 mA 4
Continuous current through VCC or GND ICC -100 100 mA 4
Junction temperature TJ -65 150 °C 4
Storage temperature Tstg -65 150 °C 4
Electrostatic discharge, human-body model V(ESD) -8000 8000 V HBM 4
Electrostatic discharge, machine model V(ESD) -500 500 V MM 4
Junction-to-ambient thermal resistance (SOT-23-5) RθJA 273.8 °C/W 4
Junction-to-case (top) thermal resistance (SOT-23-5) RθJC(top) 126.8 °C/W 4
Junction-to-board thermal resistance (SOT-23-5) RθJB 85.9 °C/W 4
Junction-to-top characterization parameter (SOT-23-5) ΨJT 10.9 °C/W 4
Junction-to-board characterization parameter (SOT-23-5) ΨJB 84.9 °C/W 4

CAD (KiCad official)

  • Symbol: RS1G86XF5
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT23-5 (KiCad packages3D, STEP)
  • 3D model files: rs1g86xf5-etched.step / rs1g86xf5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs1g86xf5.step / rs1g86xf5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu RUNIC Tech datasheet (11 pp, sha256 e5a7de9c7c6b3b6a, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF