component

RS1G00XF5

Public Made by Adom

by adom

Jiangsu RUNIC Tech Logic Gates, SOT23-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentlogicrs1g00xf5factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
rs1g00xf5 / README.md
History Download
Ray Publish 0.1.0 d4b05ac 5d ago

RS1G00XF5

Jiangsu RUNIC Tech · Logic Gates · SOT23-5

RS1G00XF5 from Jiangsu RUNIC Tech, in a SOT23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A input Input A of the 2-input NAND gate; the datasheet gives an input voltage range of 0 V to 5.5 V and says unused inputs must be held at VCC or GND.
2 B input Input B of the 2-input NAND gate; the datasheet gives an input voltage range of 0 V to 5.5 V and says unused inputs must be held at VCC or GND.
3 GND power_in Ground reference pin for the device.
4 Y output NAND output, which swings between 0 V and VCC and is specified at ±24 mA drive at VCC = 3.0 V with a ±50 mA absolute maximum continuous output current.
5 VCC power_in Supply pin; the operating supply range is 1.65 V to 5.5 V (data retention down to 1.5 V).

Key specifications

Parameter Value
Manufacturer Jiangsu RUNIC Tech
Package SOT23-5
Category Logic
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage, Operating VCC 1.65 5.5 V Operating 6
Supply voltage, Data retention only VCC 1.5 5.5 V Data retention only 6
High-level input voltage VIH 1.7 V VCC=2.3V to 2.7V 6
High-level input voltage VIH 2.2 V VCC=3V to 3.6V 6
Low-level input voltage VIL 0.3 V VCC=2.3V to 2.7V 6
Low-level input voltage VIL 0.4 V VCC=3V to 3.6V 6
Input voltage VI 0 5.5 V 6
Output voltage VO 0 V 6
Input transition rise or fall time tr, tf 20 ns/V VCC=1.8V±0.15V, 2.5V±0.2V 6
Input transition rise or fall time tr, tf 10 ns/V VCC=3.3V±0.3V 6
Input transition rise or fall time tr, tf 5 ns/V VCC=5V±0.5V 6
Operating temperature TA -40 125 °C 6
VOH VOH 1.2 V IOH = -4mA, VCC=1.65V 7
VOH VOH 1.9 V IOH = -8mA, VCC=2.3V 7
VOH VOH 2.4 V IOH = -16mA, VCC=3V 7
VOH VOH 2.3 V IOH = -24mA, VCC=3V (merged cell) 7
VOH VOH 3.8 V IOH = -32mA, VCC=4.5V 7
VOL VOL 0.1 V IOL = 100μA, VCC=1.65V to 5.5V, Full 7
VOL VOL 0.45 V IOL = 4mA, VCC=1.65V 7
VOL VOL 0.3 V IOL = 8mA, VCC=2.3V 7
VOL VOL 0.4 V IOL = 16mA, VCC=3V 7
VOL VOL 0.55 V IOL = 24mA, VCC=3V (merged cell) 7
Input leakage current, A or B inputs II -1 1 µA VI=5.5V or GND; VCC 0V to 5.5V; +25C 7
Input leakage current, A or B inputs II -5 5 µA VI=5.5V or GND; VCC 0V to 5.5V; Full 7
Power-off leakage current Ioff -1 1 µA VI or VO=5.5V; VCC=0; +25C 7
Power-off leakage current Ioff -10 10 µA VI or VO=5.5V; VCC=0; Full 7
Quiescent supply current ICC 0.1 1 µA VI=5.5V or GND, IO=0; VCC 1.65V to 5.5V; +25C 7
Quiescent supply current ICC 10 µA VI=5.5V or GND, IO=0; VCC 1.65V to 5.5V; Full 7
Additional quiescent supply current per input ΔICC 500 µA One input at VCC-0.6V, other inputs at VCC or GND; VCC 3V to 5.5V; Full 7
Propagation delay tpd 21 ns VCC=1.8V±0.15V, CL=30pF, RL=500Ω; Full 7
Propagation delay tpd 7.8 ns VCC=2.5V±0.2V, CL=30pF, RL=500Ω; Full 7
Propagation delay tpd 5.7 ns VCC=3.3V±0.3V, CL=50pF, RL=500Ω; Full 7
Propagation delay tpd 4.2 ns VCC=5V±0.5V, CL=50pF, RL=500Ω; Full 7
Supply voltage range VCC -0.5 6.5 V 4
Input voltage range VI -0.5 6.5 V 4
Voltage range applied to any output in the high-impedance or power-off state Vo -0.5 6.5 V 4
Voltage range applied to any output in the high or low state Vo -0.5 V 4
Input clamp current IIK -50 mA VI<0 4
Output clamp current IOK -50 mA VO<0 4
Continuous output current IO -50 50 mA 4
Continuous current through VCC or GND -100 100 mA 4
Junction temperature TJ -65 150 °C 4
Storage temperature Tstg -65 150 °C 4
Electrostatic discharge, Human-body model (HBM) V(ESD) -8000 8000 V 4
Electrostatic discharge, Machine model (MM) V(ESD) -500 500 V 4
Junction-to-ambient thermal resistance RθJA 273.8 °C/W SOT23-5 package 4
Junction-to-case (top) thermal resistance RθJC(top) 126.8 °C/W SOT23-5 package 4
Junction-to-board thermal resistance RθJB 85.9 °C/W SOT23-5 package 4
Junction-to-top characterization parameter ΨJT 10.9 °C/W SOT23-5 package 4
Junction-to-board characterization parameter ΨJB 84.9 °C/W SOT23-5 package 4

CAD (KiCad official)

  • Symbol: RS1G00XF5
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT23-5 (KiCad packages3D, STEP)
  • 3D model files: rs1g00xf5-etched.step / rs1g00xf5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs1g00xf5.step / rs1g00xf5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu RUNIC Tech datasheet (11 pp, sha256 2012e0c501f0460d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF