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RS16N65S

Public Made by Adom

by adom

REASUNOS MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RS16N65S

REASUNOS · MOSFETs · TO-263

RS16N65S from REASUNOS, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the drive pin, with an absolute maximum gate-to-source voltage of ±30 V and a gate threshold of 3 to 4 V at ID=250 µA.
2 D passive Drain, which is also the exposed metal tab; the drain-to-source voltage is rated at 650 V and the continuous drain current is 16 A at TC=25℃.
3 S passive Source; the integral body diode carries a continuous source current of up to 16 A.

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 650 V VGS=0V,ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=650V,VGS=0V 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS=30V,VDS=0V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-30V,VDS=0V 2
Static Drain-to-Source On-Resistance RDS(on) 0.45 0.55 Ω VGS=10V,ID=8A 2
Gate Threshold Voltage VGS(TH) 3 4 V VGS=VDS,ID=250µA 2
Continuous Source Current IS 16 A Integral pn-diode in MOSFET 3
Maximum Pulsed Current ISM 64 A Integral pn-diode in MOSFET 3
Diode Forward Voltage VSD 1.4 V IS=8A,VGS=0V 3
Drain-to-Source Voltage VDSS 650 V Tc=25℃ 1
Continuous Drain Current ID 16 A TC=25℃ 1
Pulsed Drain Current IDM 64 A Note*1 1
Power Dissipation PD 165 W Tc=25℃ 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 460 mJ L = 10mH,VDD = 50V, RG = 25Ω 1
Maximum Lead Soldering Temperature TL 300 ℃ Leads at 0.063in(1.6mm) from Case for 10 seconds 1
Maximum Package Soldering Temperature TPKG 260 ℃ Package Body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 0.75 ℃/W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ 2
Junction-to-Ambient Thermal Resistance RθJA 62.5 ℃/W 1 cubic foot chamber, free air 2
Turn-on Delay Time td(ON) 55 nS VDS=325V, ID=16A, RG=25Ω 2
Rise Time trise 40 nS VDS=325V, ID=16A, RG=25Ω 2
Turn-off Delay Time td(OFF) 302 nS VDS=325V, ID=16A, RG=25Ω 2
Fall Time tfall 66 nS VDS=325V, ID=16A, RG=25Ω 2
Input Capacitance Ciss 2063 pF VGS=0V, VDS=25V, f=1.0MHz 3
Output Capacitance Coss 204 pF VGS=0V, VDS=25V, f=1.0MHz 3
Reverse Transfer Capacitance Crss 29 pF VGS=0V, VDS=25V, f=1.0MHz 3
Total Gate Charge Qg 74 nC VDS=520V, ID=16A, VGS=10V 3
Gate-to-Source Charge Qgs 10 nC VDS=520V, ID=16A, VGS=10V 3
Gate-to-Drain (Miller) Charge Qgd 40 nC VDS=520V, ID=16A, VGS=10V 3
Reverse Recovery Time trr 672 nS VGS=0V, IS=16A, di/dt=100A/µs 3
Reverse Recovery Charge Qrr 4.5 µC VGS=0V, IS=16A, di/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: RS16N65S
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: rs16n65s-etched.step / rs16n65s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs16n65s.step / rs16n65s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (8 pp, sha256 3cce573b21396784, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF