component
RS10N65D
Public Made by Adomby adom
REASUNOS MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RS10N65D
REASUNOS · MOSFETs · TO-252
RS10N65D from REASUNOS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limit is ±30 V, with threshold voltage 3 V to 4 V at VGS=VDS, ID=250µA. |
| 2 | D | passive | Drain (center pin, electrically common with the metal tab); drain-to-source voltage 650 V, continuous drain current 10 A at TC=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current 10 A, pulsed 40 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 650 | V | 1 | |||
| Continuous Drain Current | ID | 10 | A | TC=25℃ | 1 | ||
| Pulsed Drain Current | IDM | 28 | A | Note*1 | 1 | ||
| Power Dissipation | PD | 179 | W | 1 | |||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 217 | mJ | L = 10mH, VDD = 50V, RG = 25 Ω | 1 | ||
| Maximum Temperature for Soldering, Leads | TL | 300 | ℃ | Leads at 0.063in(1.6mm) from Case for 10 seconds | 1 | ||
| Maximum Temperature for Soldering, Package Body | TPKG | 260 | ℃ | Package Body for 10 seconds | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 0.7 | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | ℃/W | 1 cubic foot chamber, free air | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=650V, VGS=0V | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 0.93 | 1.05 | Ω | VGS=10V, ID=5A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 3 | 4 | V | VGS=VDS, ID=250µA | 2 | |
| Continuous Source Current | IS | 10 | A | Integral pn-diode in MOSFET | 3 | ||
| Maximum Pulsed Current | ISM | 40 | A | Integral pn-diode in MOSFET | 3 | ||
| Diode Forward Voltage | VSD | 1.4 | V | IS=5A, VGS=0V | 3 | ||
| Turn-on Delay Time | td(ON) | 43 | nS | VDS=325V, ID=10A, RG=25Ω | 2 | ||
| Rise Time | trise | 16.5 | nS | VDS=325V, ID=10A, RG=25Ω | 2 | ||
| Turn-OFF Delay Time | td(OFF) | 125 | nS | VDS=325V, ID=10A, RG=25Ω | 2 | ||
| Fall Time | tfall | 37 | nS | VDS=325V, ID=10A, RG=25Ω | 2 | ||
| Input Capacitance | Ciss | 1246 | pF | VGS=0V, VDS=25V, f=1.0MHz | 3 | ||
| Output Capacitance | Coss | 104 | pF | VGS=0V, VDS=25V, f=1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 0.5 | pF | VGS=0V, VDS=25V, f=1.0MHz | 3 | ||
| Total Gate Charge | Qg | 22 | nC | VDS=520V, ID=10A, VGS=10V | 3 | ||
| Gate-to-Source Charge | Qgs | 6 | nC | VDS=520V, ID=10A, VGS=10V | 3 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 8 | nC | VDS=520V, ID=10A, VGS=10V | 3 | ||
| Reverse Recovery Time | trr | 360 | nS | VGS=0V, IS=10A, di/dt=100A/µs | 3 | ||
| Reverse Recovery Charge | Qrr | 3.9 | µC | VGS=0V, IS=10A, di/dt=100A/µs | 3 |
CAD (KiCad official)
- Symbol:
RS10N65D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rs10n65d-etched.step/rs10n65d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs10n65d.step/rs10n65d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (9 pp, sha256
2d459f1d99110aa4, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RS10N65D
**REASUNOS** · MOSFETs · TO-252
RS10N65D from REASUNOS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limit is ±30 V, with threshold voltage 3 V to 4 V at VGS=VDS, ID=250µA. |
| 2 | D | passive | Drain (center pin, electrically common with the metal tab); drain-to-source voltage 650 V, continuous drain current 10 A at TC=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current 10 A, pulsed 40 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | 650 | V | | 1 |
| Continuous Drain Current | ID | | | 10 | A | TC=25℃ | 1 |
| Pulsed Drain Current | IDM | | | 28 | A | Note*1 | 1 |
| Power Dissipation | PD | | | 179 | W | | 1 |
| Gate-to-Source Voltage | VGS | -30 | | 30 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 217 | mJ | L = 10mH, VDD = 50V, RG = 25 Ω | 1 |
| Maximum Temperature for Soldering, Leads | TL | | | 300 | ℃ | Leads at 0.063in(1.6mm) from Case for 10 seconds | 1 |
| Maximum Temperature for Soldering, Package Body | TPKG | | | 260 | ℃ | Package Body for 10 seconds | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 0.7 | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62.5 | ℃/W | 1 cubic foot chamber, free air | 2 |
| Drain-to-Source Breakdown Voltage | BVDSS | 650 | | | V | VGS=0V, ID=250µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS=650V, VGS=0V | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 0.93 | 1.05 | Ω | VGS=10V, ID=5A | 2 |
| Gate Threshold Voltage | VGS(TH) | 3 | | 4 | V | VGS=VDS, ID=250µA | 2 |
| Continuous Source Current | IS | | | 10 | A | Integral pn-diode in MOSFET | 3 |
| Maximum Pulsed Current | ISM | | | 40 | A | Integral pn-diode in MOSFET | 3 |
| Diode Forward Voltage | VSD | | | 1.4 | V | IS=5A, VGS=0V | 3 |
| Turn-on Delay Time | td(ON) | | 43 | | nS | VDS=325V, ID=10A, RG=25Ω | 2 |
| Rise Time | trise | | 16.5 | | nS | VDS=325V, ID=10A, RG=25Ω | 2 |
| Turn-OFF Delay Time | td(OFF) | | 125 | | nS | VDS=325V, ID=10A, RG=25Ω | 2 |
| Fall Time | tfall | | 37 | | nS | VDS=325V, ID=10A, RG=25Ω | 2 |
| Input Capacitance | Ciss | | 1246 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 3 |
| Output Capacitance | Coss | | 104 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 0.5 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 3 |
| Total Gate Charge | Qg | | 22 | | nC | VDS=520V, ID=10A, VGS=10V | 3 |
| Gate-to-Source Charge | Qgs | | 6 | | nC | VDS=520V, ID=10A, VGS=10V | 3 |
| Gate-to-Drain (Miller) Charge | Qgd | | 8 | | nC | VDS=520V, ID=10A, VGS=10V | 3 |
| Reverse Recovery Time | trr | | 360 | | nS | VGS=0V, IS=10A, di/dt=100A/µs | 3 |
| Reverse Recovery Charge | Qrr | | 3.9 | | µC | VGS=0V, IS=10A, di/dt=100A/µs | 3 |
## CAD (KiCad official)
- Symbol: `RS10N65D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `rs10n65d-etched.step` / `rs10n65d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs10n65d.step` / `rs10n65d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [REASUNOS datasheet](docs/rs10n65d-datasheet.pdf) (9 pp, sha256 `2d459f1d99110aa4`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rs10n65d-datasheet.pdf)