component
RS100N120T
Public Made by Adomby adom
REASUNOS MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RS100N120T
REASUNOS · MOSFETs · TO-220
RS100N120T from REASUNOS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the MOSFET channel, with VGS limited to ±20 V and a gate threshold of 2 V min to 4 V max at ID=250 µA. |
| 2 | D | passive | Drain (also connected to the mounting tab); rated for VDSS 100 V and continuous drain current of 120 A at TC=25℃, 480 A pulsed. |
| 3 | S | passive | Source; continuous source current through the body diode is 120 A, 480 A pulsed, with a forward diode drop of 1.0 V max at IS=20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 100 | V | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 120 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 80 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 480 | A | 1 | |||
| Power Dissipation | PD | 178 | W | Tc=25℃ | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | ±20 | 1 | |
| Single Pulse Avalanche Energy | EAS | 486 | mJ | L = 3.0mH,VDS = 50V, RG = 25Ω, Tj = 25℃ | 1 | ||
| Maximum Soldering Temperature, Leads | TL | 300 | ℃ | Leads at 0.063in(1.6mm) from Case for 10 seconds | 1 | ||
| Maximum Soldering Temperature, Package Body | TPKG | 260 | ℃ | Package Body for 10 seconds | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V,ID=250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=80V,VGS=0V | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V,VDS=0V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V,VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 4.3 | 5.3 | mΩ | VGS=10V,ID=20A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 5.5 | 7.5 | mΩ | VGS=4.5V,ID=10A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 3 | 4 | V | VGS=VDS,ID=250µA | 2 |
| Continuous Source Current | IS | 120 | A | Integral pn-diode in MOSFET | 3 | ||
| Maximum Pulsed Current | ISM | 480 | A | Integral pn-diode in MOSFET | 3 | ||
| Diode Forward Voltage | VSD | 1 | V | IS=20A,VGS=0V | 3 | ||
| Junction-to-Case Thermal Resistance | RθJC | 0.7 | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 46 | ℃/W | 1 cubic foot chamber, free air | 2 | ||
| Turn-on Delay Time | td(ON) | 18 | nS | VDS=50V, ID=20A, RG=3Ω, VGS=10V | 2 | ||
| Rise Time | trise | 23 | nS | VDS=50V, ID=20A, RG=3Ω, VGS=10V | 2 | ||
| Turn-OFF Delay Time | td(OFF) | 37 | nS | VDS=50V, ID=20A, RG=3Ω, VGS=10V | 2 | ||
| Fall Time | tfall | 16 | nS | VDS=50V, ID=20A, RG=3Ω, VGS=10V | 2 | ||
| Input Capacitance | Ciss | 4100 | pF | VGS=0V, VDS=50V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 590 | pF | VGS=0V, VDS=50V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 20 | pF | VGS=0V, VDS=50V, f=1MHz | 3 | ||
| Total Gate Charge | Qg | 69 | nC | VDS=50V, ID=20A, VGS=10V | 3 | ||
| Gate-to-Source Charge | Qgs | 24 | nC | VDS=50V, ID=20A, VGS=10V | 3 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 19 | nC | VDS=50V, ID=20A, VGS=10V | 3 | ||
| Reverse Recovery Time | trr | 64 | nS | VGS=0V, IS=20A, di/dt=100A/µs | 3 | ||
| Reverse Recovery Charge | Qrr | 126 | nC | VGS=0V, IS=20A, di/dt=100A/µs | 3 |
CAD (KiCad official)
- Symbol:
RS100N120T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
rs100n120t-etched.step/rs100n120t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs100n120t.step/rs100n120t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (9 pp, sha256
32786717cf574ebf, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RS100N120T
**REASUNOS** · MOSFETs · TO-220
RS100N120T from REASUNOS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the MOSFET channel, with VGS limited to ±20 V and a gate threshold of 2 V min to 4 V max at ID=250 µA. |
| 2 | D | passive | Drain (also connected to the mounting tab); rated for VDSS 100 V and continuous drain current of 120 A at TC=25℃, 480 A pulsed. |
| 3 | S | passive | Source; continuous source current through the body diode is 120 A, 480 A pulsed, with a forward diode drop of 1.0 V max at IS=20 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | 100 | V | Tc=25℃ | 1 |
| Continuous Drain Current | ID | | | 120 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | 80 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 480 | A | | 1 |
| Power Dissipation | PD | | | 178 | W | Tc=25℃ | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | ±20 | 1 |
| Single Pulse Avalanche Energy | EAS | | | 486 | mJ | L = 3.0mH,VDS = 50V, RG = 25Ω, Tj = 25℃ | 1 |
| Maximum Soldering Temperature, Leads | TL | | | 300 | ℃ | Leads at 0.063in(1.6mm) from Case for 10 seconds | 1 |
| Maximum Soldering Temperature, Package Body | TPKG | | | 260 | ℃ | Package Body for 10 seconds | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V,ID=250µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS=80V,VGS=0V | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=20V,VDS=0V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS=-20V,VDS=0V | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 4.3 | 5.3 | mΩ | VGS=10V,ID=20A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 5.5 | 7.5 | mΩ | VGS=4.5V,ID=10A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | 3 | 4 | V | VGS=VDS,ID=250µA | 2 |
| Continuous Source Current | IS | | | 120 | A | Integral pn-diode in MOSFET | 3 |
| Maximum Pulsed Current | ISM | | | 480 | A | Integral pn-diode in MOSFET | 3 |
| Diode Forward Voltage | VSD | | | 1 | V | IS=20A,VGS=0V | 3 |
| Junction-to-Case Thermal Resistance | RθJC | | 0.7 | | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | 46 | | ℃/W | 1 cubic foot chamber, free air | 2 |
| Turn-on Delay Time | td(ON) | | 18 | | nS | VDS=50V, ID=20A, RG=3Ω, VGS=10V | 2 |
| Rise Time | trise | | 23 | | nS | VDS=50V, ID=20A, RG=3Ω, VGS=10V | 2 |
| Turn-OFF Delay Time | td(OFF) | | 37 | | nS | VDS=50V, ID=20A, RG=3Ω, VGS=10V | 2 |
| Fall Time | tfall | | 16 | | nS | VDS=50V, ID=20A, RG=3Ω, VGS=10V | 2 |
| Input Capacitance | Ciss | | 4100 | | pF | VGS=0V, VDS=50V, f=1MHz | 3 |
| Output Capacitance | Coss | | 590 | | pF | VGS=0V, VDS=50V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 20 | | pF | VGS=0V, VDS=50V, f=1MHz | 3 |
| Total Gate Charge | Qg | | 69 | | nC | VDS=50V, ID=20A, VGS=10V | 3 |
| Gate-to-Source Charge | Qgs | | 24 | | nC | VDS=50V, ID=20A, VGS=10V | 3 |
| Gate-to-Drain (Miller) Charge | Qgd | | 19 | | nC | VDS=50V, ID=20A, VGS=10V | 3 |
| Reverse Recovery Time | trr | | 64 | | nS | VGS=0V, IS=20A, di/dt=100A/µs | 3 |
| Reverse Recovery Charge | Qrr | | 126 | | nC | VGS=0V, IS=20A, di/dt=100A/µs | 3 |
## CAD (KiCad official)
- Symbol: `RS100N120T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `rs100n120t-etched.step` / `rs100n120t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs100n120t.step` / `rs100n120t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [REASUNOS datasheet](docs/rs100n120t-datasheet.pdf) (9 pp, sha256 `32786717cf574ebf`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rs100n120t-datasheet.pdf)