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RRH090P03TB1

ROHM Semicon · MOSFETs · SOP-8

RRH090P03TB1 from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive MOSFET source terminal, tied to pins 2 and 3; Pch device with VDSS of -30V and continuous drain current of ±9A.
2 Source passive MOSFET source terminal, tied to pins 1 and 3; Pch device with VDSS of -30V and continuous drain current of ±9A.
3 Source passive MOSFET source terminal, tied to pins 1 and 2; Pch device with VDSS of -30V and continuous drain current of ±9A.
4 Gate input Gate input with built-in G-S protection diode, VGSS rated ±20V and threshold of -1.0V to -2.5V.
5 Drain passive MOSFET drain terminal, tied to pins 6, 7 and 8; VDSS of -30V and pulsed drain current of ±36A.
6 Drain passive MOSFET drain terminal, tied to pins 5, 7 and 8; VDSS of -30V and pulsed drain current of ±36A.
7 Drain passive MOSFET drain terminal, tied to pins 5, 6 and 8; VDSS of -30V and pulsed drain current of ±36A.
8 Drain passive MOSFET drain terminal, tied to pins 5, 6 and 7; VDSS of -30V and pulsed drain current of ±36A.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS -30 V 1
Continuous drain current ID -9 9 A Limited only by maximum temperature allowed (note *1) 1
Pulsed drain current ID,pulse -36 36 A Pw ≤ 10μs, Duty cycle ≤ 1% (note *2) 1
Gate - Source voltage VGSS -20 20 V 1
Avalanche energy, single pulse EAS 0.6 mJ L ⋍ 10μH, VDD = -15V, RG = 25Ω, starting Tj = 25°C (note *3) 1
Power dissipation PD 2 W Mounted on a ceramic board (30×30×0.8mm) (note *4) 1
Power dissipation PD 0.65 W Mounted on a FR4 (20×20×0.8mm) (note *5) 1
Junction temperature Tj 150 ℃ 1
Range of storage temperature Tstg -55 150 ℃ 1
Thermal resistance, junction - ambient RthJA 62.5 ℃/W Mounted on a ceramic board (30×30×0.8mm) (note *4) 2
Thermal resistance, junction - ambient RthJA 192 ℃/W Mounted on a FR4 (20×20×0.8mm) (note *5) 2
Drain - Source breakdown voltage V(BR)DSS -30 V VGS = 0V, ID = -1mA 2
Zero gate voltage drain current IDSS -1 μA VDS = -30V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) -1 -2.5 V VDS = -10V, ID = -1mA 2
Static drain - source on - state resistance RDS(on) 11 15.4 mΩ VGS = -10V, ID = -9A (note *6) 2
Static drain - source on - state resistance RDS(on) 15 21 mΩ VGS = -4.5V, ID = -4.5A (note *6) 2
Static drain - source on - state resistance RDS(on) 17 24 mΩ VGS = -4V, ID = -4.5A (note *6) 2
Forward Transfer Admittance /Yfs/ 10 20 S VDS = -10V, ID = -9A (note *6) 2
Inverse diode continuous, forward current IS -1.6 A Ta = 25℃ (note *1) 3
Forward voltage VSD -1.2 V VGS = 0V, IS = -9A (note *6) 3
Reverse recovery time trr 35 70 ns IS = -9A, VGS=0V, di/dt = 100A/μs (note *6) 3
Reverse recovery charge Qrr 30 60 μC 3

CAD (KiCad official)

  • Symbol: RRH090P03TB1
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: rrh090p03tb1-etched.step / rrh090p03tb1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rrh090p03tb1.step / rrh090p03tb1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (12 pp, sha256 2343889c31e8a51a, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF