component
RRH090P03TB1
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| rrh090p03tb1-etched.glb | 13d ago |
| rrh090p03tb1-etched.step | 13d ago |
| rrh090p03tb1-hero.glb | 13d ago |
| rrh090p03tb1-hero.overlay.json | 13d ago |
| rrh090p03tb1.glb | 13d ago |
| rrh090p03tb1.kicad_mod | 13d ago |
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| rrh090p03tb1.lbr | 13d ago |
| rrh090p03tb1.step | 13d ago |
RRH090P03TB1
ROHM Semicon · MOSFETs · SOP-8
RRH090P03TB1 from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | MOSFET source terminal, tied to pins 2 and 3; Pch device with VDSS of -30V and continuous drain current of ±9A. |
| 2 | Source | passive | MOSFET source terminal, tied to pins 1 and 3; Pch device with VDSS of -30V and continuous drain current of ±9A. |
| 3 | Source | passive | MOSFET source terminal, tied to pins 1 and 2; Pch device with VDSS of -30V and continuous drain current of ±9A. |
| 4 | Gate | input | Gate input with built-in G-S protection diode, VGSS rated ±20V and threshold of -1.0V to -2.5V. |
| 5 | Drain | passive | MOSFET drain terminal, tied to pins 6, 7 and 8; VDSS of -30V and pulsed drain current of ±36A. |
| 6 | Drain | passive | MOSFET drain terminal, tied to pins 5, 7 and 8; VDSS of -30V and pulsed drain current of ±36A. |
| 7 | Drain | passive | MOSFET drain terminal, tied to pins 5, 6 and 8; VDSS of -30V and pulsed drain current of ±36A. |
| 8 | Drain | passive | MOSFET drain terminal, tied to pins 5, 6 and 7; VDSS of -30V and pulsed drain current of ±36A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | -30 | V | 1 | |||
| Continuous drain current | ID | -9 | 9 | A | Limited only by maximum temperature allowed (note *1) | 1 | |
| Pulsed drain current | ID,pulse | -36 | 36 | A | Pw ≤ 10μs, Duty cycle ≤ 1% (note *2) | 1 | |
| Gate - Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Avalanche energy, single pulse | EAS | 0.6 | mJ | L ⋍ 10μH, VDD = -15V, RG = 25Ω, starting Tj = 25°C (note *3) | 1 | ||
| Power dissipation | PD | 2 | W | Mounted on a ceramic board (30×30×0.8mm) (note *4) | 1 | ||
| Power dissipation | PD | 0.65 | W | Mounted on a FR4 (20×20×0.8mm) (note *5) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - ambient | RthJA | 62.5 | ℃/W | Mounted on a ceramic board (30×30×0.8mm) (note *4) | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 192 | ℃/W | Mounted on a FR4 (20×20×0.8mm) (note *5) | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | -30 | V | VGS = 0V, ID = -1mA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -30V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | -1 | -2.5 | V | VDS = -10V, ID = -1mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 11 | 15.4 | mΩ | VGS = -10V, ID = -9A (note *6) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 15 | 21 | mΩ | VGS = -4.5V, ID = -4.5A (note *6) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 17 | 24 | mΩ | VGS = -4V, ID = -4.5A (note *6) | 2 | |
| Forward Transfer Admittance | /Yfs/ | 10 | 20 | S | VDS = -10V, ID = -9A (note *6) | 2 | |
| Inverse diode continuous, forward current | IS | -1.6 | A | Ta = 25℃ (note *1) | 3 | ||
| Forward voltage | VSD | -1.2 | V | VGS = 0V, IS = -9A (note *6) | 3 | ||
| Reverse recovery time | trr | 35 | 70 | ns | IS = -9A, VGS=0V, di/dt = 100A/μs (note *6) | 3 | |
| Reverse recovery charge | Qrr | 30 | 60 | μC | 3 |
CAD (KiCad official)
- Symbol:
RRH090P03TB1 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
rrh090p03tb1-etched.step/rrh090p03tb1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rrh090p03tb1.step/rrh090p03tb1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (12 pp, sha256
2343889c31e8a51a, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).