component

RRH040P03TB-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsrrh040p03tb-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 13d ago
viewers rrh040p03tb-vb: viewers · Ray 13d ago
package.json Publish 0.1.0 · Ray 13d ago
page.json Set visibility: public · Ray 13d ago
README.md Publish 0.1.0 · Ray 13d ago
rrh040p03tb-vb-etched.glb Publish 0.1.0 · Ray 13d ago
rrh040p03tb-vb-etched.step rrh040p03tb-vb: factory component page (tier=lcsc) · Ray 13d ago
rrh040p03tb-vb-hero.glb rrh040p03tb-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 13d ago
rrh040p03tb-vb-hero.overlay.json Publish 0.1.0 · Ray 13d ago
rrh040p03tb-vb.glb Publish 0.1.0 · Ray 13d ago
rrh040p03tb-vb.kicad_mod Publish 0.1.0 · Ray 13d ago
rrh040p03tb-vb.kicad_sym Publish 0.1.0 · Ray 13d ago
rrh040p03tb-vb.lbr Publish 0.1.0 · Ray 13d ago
rrh040p03tb-vb.step Publish 0.1.0 · Ray 13d ago

RRH040P03TB-VB

VBsemi Elec · MOSFETs · SO-8

RRH040P03TB-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; continuous source current (diode conduction) is -2.3 A (10 s) / -1.1 A steady state.
2 S passive Source of the P-channel MOSFET, internally common with the other source pins.
3 S passive Source of the P-channel MOSFET, internally common with the other source pins.
4 G input Gate of the P-channel MOSFET; gate-source voltage limit is ±20 V with threshold of -0.7 V to -2.0 V.
5 D passive Drain of the P-channel MOSFET; VDS is -30 V and pulsed drain current is -30 A.
6 D passive Drain of the P-channel MOSFET, internally common with the other drain pins.
7 D passive Drain of the P-channel MOSFET, internally common with the other drain pins.
8 D passive Drain of the P-channel MOSFET, internally common with the other drain pins.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) -0.7 -2 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (70 °C) IDSS -5 µA VDS = -30 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) -20 A VDS ≤ -10 V, VGS = -10 V 2
On-State Drain Current ID(on) -5 A VDS ≤ -5 V, VGS = -4.5 V 2
Diode Forward Voltage VSD -0.8 -1.1 V IS = -2.3 A, VGS = 0 V 2
Turn-On Delay Time td(on) 14 25 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω 2
Rise Time tr 14 25 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω 2
Turn-Off Delay Time td(off) 42 70 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω 2
Fall Time tf 30 50 ns VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time trr 30 60 ns IF = -1.2 A, dI/dt = 100 A/µs 2
Drain-Source Voltage VDS -30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current, 10 s (TA = 25 °C) ID -5.8 A TJ = 150 °C, TA = 25 °C, 10 s 1
Continuous Drain Current, steady state (TA = 25 °C) ID -4.1 A TJ = 150 °C, TA = 25 °C, steady state 1
Continuous Drain Current, 10 s (TA = 70 °C) ID -4.6 A TJ = 150 °C, TA = 70 °C, 10 s 1
Continuous Drain Current, steady state (TA = 70 °C) ID -3.2 A TJ = 150 °C, TA = 70 °C, steady state 1
Pulsed Drain Current IDM -30 A 1
Continuous Source Current, 10 s IS -2.3 A Diode conduction, 10 s 1
Continuous Source Current, steady state IS -1.1 A Diode conduction, steady state 1
Maximum Power Dissipation, 10 s (TA = 25 °C) PD 2.5 W TA = 25 °C, 10 s 1
Maximum Power Dissipation, steady state (TA = 25 °C) PD 1.3 W TA = 25 °C, steady state 1
Maximum Power Dissipation, 10 s (TA = 70 °C) PD 1.6 W TA = 70 °C, 10 s 1
Maximum Power Dissipation, steady state (TA = 70 °C) PD 0.8 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance, t ≤ 10 s RthJA 40 50 °C/W t ≤ 10 s 1
Junction-to-Ambient Thermal Resistance, steady state RthJA 70 95 °C/W Steady state 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 24 30 °C/W Steady state 1
Drain-Source On-State Resistance RDS(on) 0.033 Ω VGS = -10 V, ID = -5.8 A 2
Drain-Source On-State Resistance RDS(on) 0.043 Ω VGS = -6 V, ID = -5 A 2
Drain-Source On-State Resistance RDS(on) 0.056 Ω VGS = -4.5 V, ID = -4.4 A 2
Forward Transconductance gfs 13 S VDS = -15 V, ID = -5.8 A 2
Gate-Source Charge Qgs 2.3 nC VDS = -15 V, VGS = -10 V, ID = -3.5 A 2
Gate-Drain Charge Qgd 4.5 nC VDS = -15 V, VGS = -10 V, ID = -3.5 A 2
Gate Resistance Rg 8.8 Ω 2

CAD (KiCad official)

  • Symbol: RRH040P03TB-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: rrh040p03tb-vb-etched.step / rrh040p03tb-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rrh040p03tb-vb.step / rrh040p03tb-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 eca5847168286fe8, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF