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RQK0605JGDQATL-E-VB
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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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Symbol & Footprint
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README
markdownRQK0605JGDQATL-E-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
RQK0605JGDQATL-E-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V. |
| 2 | S | passive | Source; continuous source-drain diode current 1.39 A at TC = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage 60 V, continuous drain current 4.0 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current (TJ = 150 °C), TC = 25 °C | ID | 4 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current, TC = 70 °C | ID | 3.4 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Continuous Drain Current, TA = 25 °C | ID | 3.1 | A | TA = 25 °C (notes b, c) | 1 | ||
| Continuous Drain Current, TA = 70 °C | ID | 2.5 | A | TA = 70 °C (notes b, c) | 1 | ||
| Pulsed Drain Current | IDM | 12 | A | 1 | |||
| Continuous Source-Drain Diode Current, TC = 25 °C | IS | 1.39 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current, TA = 25 °C | IS | 0.91 | A | TA = 25 °C (notes b, c) | 1 | ||
| Avalanche Current | IAS | 6 | A | L = 0.1 mH | 1 | ||
| Single-Pulse Avalanche Energy | EAS | 1.8 | mJ | 1 | |||
| Maximum Power Dissipation, TC = 25 °C | PD | 1.66 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation, TC = 70 °C | PD | 1.06 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation, TA = 25 °C | PD | 1.09 | W | TA = 25 °C (notes b, c) | 1 | ||
| Maximum Power Dissipation, TA = 70 °C | PD | 0.7 | W | TA = 70 °C (notes b, c) | 1 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VDS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current, TJ = 55 °C | IDSS | 10 | µA | VDS = 60 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 8 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.086 | Ω | VGS = 4.5 V, ID = 1.7 A | 2 | ||
| Gate Resistance | Rg | 0.6 | 2.2 | 5.1 | Ω | f = 1 MHz | 2 |
| Rise Time (VGS = 10 V) | tr | 10 | 15 | ns | VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω | 2 | |
| Turn-Off Delay Time (VGS = 10 V) | td(off) | 10 | 15 | ns | VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω | 2 | |
| Fall Time (VGS = 10 V) | tf | 7 | 10.5 | ns | VDD = 30 V, RL = 20 Ω, ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω | 2 | |
| Turn-On Delay Time (VGS = 4.5 V) | td(on) | 15 | 23 | ns | VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω | 2 | |
| Rise Time (VGS = 4.5 V) | tr | 16 | 24 | ns | VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω | 2 | |
| Turn-Off Delay Time (VGS = 4.5 V) | td(off) | 11 | 17 | ns | VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω | 2 | |
| Fall Time (VGS = 4.5 V) | tf | 11 | 17 | ns | VDD = 30 V, RL = 20 Ω, ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 2.19 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 7 | A | 2 | |||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 1.5 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 15 | 23 | ns | IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 10 | 15 | nC | IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Forward Transconductance | gfs | 5 | S | VDS = 15 V, ID = 1.9 A | 2 | ||
| Reverse Transfer Capacitance | Crss | 13 | pF | VDS = 30 V, VGS = 0 V, f = 1 MHz | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 55 | mV/°C | ID = 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | -5 | 2 | ||||
| Maximum Junction-to-Ambient (t ≤ 5 s) | RthJA | 90 | 115 | °C/W | Surface mounted, t ≤ 5 s (notes b, d) | 1 | |
| Maximum Junction-to-Ambient (steady state) | RthJA | 120 | °C/W | Steady state (note d) | 1 | ||
| Maximum Junction-to-Foot (Drain), steady state | RthJF | 60 | 75 | °C/W | Steady state | 1 |
CAD (KiCad official)
- Symbol:
RQK0605JGDQATL-E-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
rqk0605jgdqatl-e-vb-etched.step/rqk0605jgdqatl-e-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rqk0605jgdqatl-e-vb.step/rqk0605jgdqatl-e-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
4175a5fd3156aa29, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).