Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

RN4907

TOSHIBA · Digital Transistors · SOT-363

RN4907 from TOSHIBA, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter1 passive Emitter of Q1, the PNP bias-resistor transistor; Q1 absolute maximum ratings are VCBO -50 V, VCEO -50 V, VEBO -6 V and IC -100 mA.
2 Base1 input Base of Q1 with built-in input resistor R1 (typ. 10 kΩ, range 7 to 13 kΩ), so no external base resistor is needed.
3 Collector2 passive Collector of Q2, the NPN bias-resistor transistor; Q2 absolute maximum ratings are VCBO 50 V, VCEO 50 V, VEBO 6 V and IC 100 mA.
4 Emitter2 passive Emitter of Q2, the NPN bias-resistor transistor.
5 Base2 input Base of Q2 with built-in input resistor R1 (typ. 10 kΩ, range 7 to 13 kΩ), so no external base resistor is needed.
6 Collector1 passive Collector of Q1, the PNP bias-resistor transistor.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector cut-off current (Q1, PNP) ICBO -100 nA VCB = -50 V, IE = 0 mA 2
Collector cut-off current (Q1, PNP) ICEO -500 nA VCE = -50 V, IB = 0 mA 2
Collector cut-off current (Q2, NPN) ICBO 100 nA VCB = 50 V, IE = 0 mA 3
Collector cut-off current (Q2, NPN) ICEO 500 nA VCE = 50 V, IB = 0 mA 3
Input resistance (R1, both transistors) R1 7 10 13 kΩ 3
Resistor ratio (R1/R2, both transistors) R1/R2 0.191 0.213 0.232 3
Collector-base voltage (Q1, PNP) VCBO -50 V Ta = 25 °C 2
Collector-emitter voltage (Q1, PNP) VCEO -50 V Ta = 25 °C 2
Emitter-base voltage (Q1, PNP) VEBO -6 V Ta = 25 °C 2
Collector current (Q1, PNP) IC -100 mA Ta = 25 °C 2
Collector-base voltage (Q2, NPN) VCBO 50 V Ta = 25 °C 2
Collector current (Q2, NPN) IC 100 mA Ta = 25 °C 2
Collector power dissipation (total) 200 mW Ta = 25 °C, total rating (Q1 and Q2) 2
Junction temperature 150 °C 2
Storage temperature Tstg -55 150 °C 2

CAD (KiCad official)

  • Symbol: RN4907
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: rn4907-etched.step / rn4907-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rn4907.step / rn4907.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (6 pp, sha256 29ec8904fa993c3c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF