component
RN1902
Public Made by Adomby adom
TOSHIBA(东芝) , SOT363. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2d ago |
| viewers | 2d ago |
| package.json | 2d ago |
| page.json | 2d ago |
| README.md | 2d ago |
| rn1902-etched.glb | 2d ago |
| rn1902-etched.step | 2d ago |
| rn1902-hero.glb | 2d ago |
| rn1902-hero.overlay.json | 2d ago |
| rn1902.glb | 2d ago |
| rn1902.kicad_mod | 2d ago |
| rn1902.kicad_sym | 2d ago |
| rn1902.lbr | 2d ago |
| rn1902.step | 2d ago |
RN1902
TOSHIBA(东芝) · IC · SOT363
RN1902 from TOSHIBA(东芝), in a SOT363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter1 | passive | Emitter of transistor Q1 (NPN with built-in 10 kΩ base resistor R1 and 10 kΩ base-emitter resistor R2). |
| 2 | Base1 | input | Base (input) of transistor Q1 through built-in R1 = 10 kΩ, with R1/R2 ratio of 1.0. |
| 3 | Collector2 | passive | Collector of transistor Q2; VCEO rated 50 V and IC max 100 mA. |
| 4 | Emitter2 | passive | Emitter of transistor Q2 (NPN with built-in 10 kΩ base resistor R1 and 10 kΩ base-emitter resistor R2). |
| 5 | Base2 | input | Base (input) of transistor Q2 through built-in R1 = 10 kΩ, with R1/R2 ratio of 1.0. |
| 6 | Collector1 | passive | Collector of transistor Q1; VCEO rated 50 V and IC max 100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA(东芝) |
| Package | SOT363 |
| Category | |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Bias resistor R1 (input resistance) | R1 | 7 | 10 | 13 | kΩ | 4 | |
| Resistor ratio R1/R2 (RN1901~RN1904 group) | R1/R2 | 0.9 | 1 | 1.1 | 4 | ||
| DC current gain | hFE | 50 | VCE = 5 V, IC = 10 mA | 4 | |||
| Collector cut-off current | ICBO | 100 | nA | VCB = 50 V, IE = 0 mA | 4 | ||
| Collector cut-off current | ICEO | 500 | nA | VCE = 50 V, IB = 0 mA | 4 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC = 5 mA, IB = 0.25 mA | 4 | ||
| Collector-base voltage | VCBO | 50 | V | Ta = 25 °C, Q1/Q2 common | 3 | ||
| Collector-emitter voltage | VCEO | 50 | V | Ta = 25 °C, RN1901~RN1904 | 3 | ||
| Emitter-base voltage | VEBO | 10 | V | Ta = 25 °C, RN1901~RN1904 | 3 | ||
| Collector current | IC | 100 | mA | Ta = 25 °C | 3 | ||
| Collector power dissipation | PC | 200 | mW | Total rating, Ta = 25 °C | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 3 |
CAD (KiCad official)
- Symbol:
RN1902 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT363 (KiCad packages3D, STEP)
- 3D model files:
rn1902-etched.step/rn1902-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rn1902.step/rn1902.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA(东芝) datasheet (11 pp, sha256
9c180bf7af9d8072, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).