component
RN1404
Public Made by Adomby adom
TOSHIBA Digital Transistors, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RN1404
TOSHIBA · Digital Transistors · TO-236-3(SOT-23-3)
RN1404 from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base input through the built-in 47 kΩ bias resistor R1 (RN1404); VI(ON) 1.3 to 5.0 V range per datasheet table, VEBO max 10 V. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor, connected to ground in typical switching use; R2 (47 kΩ) sits between base and emitter. |
| 3 | Collector | passive | Collector terminal with VCEO max 50 V and IC max 100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-236-3(SOT-23-3) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO | 100 | nA | VCB = 50 V, IE = 0 mA | 4 | ||
| Collector cut-off current | ICEO | 500 | nA | VCE = 50 V, IB = 0 mA | 4 | ||
| Emitter cut-off current | IEBO | 0.15 | mA | VEB = 10 V, IC = 0 mA | 4 | ||
| DC current gain | hFE | 80 | VCE = 5 V, IC = 10 mA | 4 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.1 | 0.3 | V | IC = 5 mA, IB = 0.25 mA | 4 | |
| Input resistance | R1 | 32.9 | 47 | 61.1 | kΩ | 4 | |
| Resistor ratio | R1/R2 | 0.9 | 1 | 1.1 | 4 | ||
| Collector-base voltage | VCBO | 50 | V | 3 | |||
| Collector-emitter voltage | VCEO | 50 | V | 3 | |||
| Emitter-base voltage | VEBO | 10 | V | 3 | |||
| Collector current | IC | 100 | mA | 3 | |||
| Collector power dissipation | PC | 200 | mW | 3 | |||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 3 |
CAD (KiCad official)
- Symbol:
RN1404 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files:
rn1404-etched.step/rn1404-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rn1404.step/rn1404.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (11 pp, sha256
6acb19feab63e3a2, retrieved 2026-10-21, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RN1404
**TOSHIBA** · Digital Transistors · TO-236-3(SOT-23-3)
RN1404 from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base input through the built-in 47 kΩ bias resistor R1 (RN1404); VI(ON) 1.3 to 5.0 V range per datasheet table, VEBO max 10 V. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor, connected to ground in typical switching use; R2 (47 kΩ) sits between base and emitter. |
| 3 | Collector | passive | Collector terminal with VCEO max 50 V and IC max 100 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-236-3(SOT-23-3) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO | | | 100 | nA | VCB = 50 V, IE = 0 mA | 4 |
| Collector cut-off current | ICEO | | | 500 | nA | VCE = 50 V, IB = 0 mA | 4 |
| Emitter cut-off current | IEBO | | | 0.15 | mA | VEB = 10 V, IC = 0 mA | 4 |
| DC current gain | hFE | 80 | | | | VCE = 5 V, IC = 10 mA | 4 |
| Collector-emitter saturation voltage | VCE(sat) | | 0.1 | 0.3 | V | IC = 5 mA, IB = 0.25 mA | 4 |
| Input resistance | R1 | 32.9 | 47 | 61.1 | kΩ | | 4 |
| Resistor ratio | R1/R2 | 0.9 | 1 | 1.1 | | | 4 |
| Collector-base voltage | VCBO | | | 50 | V | | 3 |
| Collector-emitter voltage | VCEO | | | 50 | V | | 3 |
| Emitter-base voltage | VEBO | | | 10 | V | | 3 |
| Collector current | IC | | | 100 | mA | | 3 |
| Collector power dissipation | PC | | | 200 | mW | | 3 |
| Junction temperature | Tj | | | 150 | °C | | 3 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 3 |
## CAD (KiCad official)
- Symbol: `RN1404`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files: `rn1404-etched.step` / `rn1404-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rn1404.step` / `rn1404.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](docs/rn1404-datasheet.pdf) (11 pp, sha256 `6acb19feab63e3a2`, retrieved 2026-10-21, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rn1404-datasheet.pdf)