RN1301

TOSHIBA · Digital Transistors · SOT-323

RN1301 from TOSHIBA, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	BASE	input	Base input through built-in R1 (4.7 kΩ for RN1301) with R2 to emitter; VEBO max 10 V (RN1301 to 1304).
2	EMITTER	passive	Emitter of the NPN transistor, connected to the R2 bias resistor; VEBO max 10 V (RN1301 to 1304).
3	COLLECTOR	passive	Collector of the NPN transistor; VCEO max 50 V, VCBO max 50 V, IC max 100 mA.

Key specifications

Parameter	Value
Manufacturer	TOSHIBA
Package	SOT-323
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector cut-off current (base open, VCE=50V)	ICEO			500	nA	VCE = 50V, IB = 0	2
Collector cut-off current (emitter open, VCB=50V)	ICBO			100	nA	VCB = 50V, IE = 0	2
Emitter cut-off current (RN1301)	IEBO	0.82		1.52	mA	VEB = 10V, IC = 0	2
DC current gain (RN1301)	hFE	30				VCE = 5V, IC = 10mA	2
Collector-emitter saturation voltage	VCE (sat)		0.1	0.3	V	IC = 5mA, IB = 0.25mA	2
Input voltage (ON) (RN1301)	VI (ON)	1.1		2	V	VCE = 0.2V, IC = 5mA	2
Collector output capacitance	Cob		3	6	pF	VCB = 10V, IE = 0, f = 1MHz	2
Input resistor R1 (RN1301, nominal 4.7 kΩ)	R1	3.29	4.7	6.11	kΩ		2
Resistor ratio R1/R2 (RN1301 to 1304)	R1/R2	0.9	1	1.1			2
Collector-base voltage	VCBO			50	V		1
Collector-emitter voltage	VCEO			50	V	RN1301 to 1306	1
Emitter-base voltage	VEBO			10	V	RN1301 to 1304	1
Collector current	IC			100	mA		1
Collector power dissipation	PC			100	mW		1
Junction temperature	Tj			150	°C		1
Storage temperature range	Tstg	-55		150	°C	RN1301 to 1306	1

CAD (KiCad official)

Symbol: RN1301
Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
3D model: SOT-323 (KiCad packages3D, STEP)
3D model files: rn1301-etched.step / rn1301-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rn1301.step / rn1301.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: TOSHIBA datasheet (7 pp, sha256 31bc9512ddff95c1, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

# RN1301

**TOSHIBA** · Digital Transistors · SOT-323

RN1301 from TOSHIBA, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base input through built-in R1 (4.7 kΩ for RN1301) with R2 to emitter; VEBO max 10 V (RN1301 to 1304). |
| 2 | EMITTER | passive | Emitter of the NPN transistor, connected to the R2 bias resistor; VEBO max 10 V (RN1301 to 1304). |
| 3 | COLLECTOR | passive | Collector of the NPN transistor; VCEO max 50 V, VCBO max 50 V, IC max 100 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current (base open, VCE=50V) | ICEO |  |  | 500 | nA | VCE = 50V, IB = 0 | 2 |
| Collector cut-off current (emitter open, VCB=50V) | ICBO |  |  | 100 | nA | VCB = 50V, IE = 0 | 2 |
| Emitter cut-off current (RN1301) | IEBO | 0.82 |  | 1.52 | mA | VEB = 10V, IC = 0 | 2 |
| DC current gain (RN1301) | hFE | 30 |  |  |  | VCE = 5V, IC = 10mA | 2 |
| Collector-emitter saturation voltage | VCE (sat) |  | 0.1 | 0.3 | V | IC = 5mA, IB = 0.25mA | 2 |
| Input voltage (ON) (RN1301) | VI (ON) | 1.1 |  | 2 | V | VCE = 0.2V, IC = 5mA | 2 |
| Collector output capacitance | Cob |  | 3 | 6 | pF | VCB = 10V, IE = 0, f = 1MHz | 2 |
| Input resistor R1 (RN1301, nominal 4.7 kΩ) | R1 | 3.29 | 4.7 | 6.11 | kΩ |  | 2 |
| Resistor ratio R1/R2 (RN1301 to 1304) | R1/R2 | 0.9 | 1 | 1.1 |  |  | 2 |
| Collector-base voltage | VCBO |  |  | 50 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | 50 | V | RN1301 to 1306 | 1 |
| Emitter-base voltage | VEBO |  |  | 10 | V | RN1301 to 1304 | 1 |
| Collector current | IC |  |  | 100 | mA |  | 1 |
| Collector power dissipation | PC |  |  | 100 | mW |  | 1 |
| Junction temperature | Tj |  |  | 150 | °C |  | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | °C | RN1301 to 1306 | 1 |

## CAD (KiCad official)

- Symbol: `RN1301`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `rn1301-etched.step` / `rn1301-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rn1301.step` / `rn1301.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588881875046055937) (7 pp, sha256 `31bc9512ddff95c1`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rn1301-datasheet.pdf)