component
RN1107MFV
Public Made by Adomby adom
TOSHIBA Digital Transistors, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RN1107MFV
TOSHIBA · Digital Transistors · SOT-723
RN1107MFV from TOSHIBA, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN bias-resistor transistor, with the integrated input bias resistor R1 between base and the internal network. |
| 2 | Emitter | passive | Emitter terminal of the NPN bias-resistor transistor, referenced as the emitter in the absolute maximum ratings and electrical characteristics. |
| 3 | Collector | passive | Collector terminal of the NPN bias-resistor transistor, rated for collector current IC and collector-emitter voltage VCEO as stated in the absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-723 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO | 100 | nA | VCB = 50 V, IE = 0 mA | 3 | ||
| Collector cut-off current | ICEO | 500 | nA | VCE = 50 V, IB = 0 mA | 3 | ||
| DC current gain | hFE | 80 | VCE = 5 V, IC = 10 mA | 3 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC = 5 mA, IB = 0.5 mA | 3 | ||
| Input resistance | R1 | 7 | 10 | 13 | kΩ | 3 | |
| Resistor ratio | R1/R2 | 0.17 | 0.213 | 0.255 | 3 | ||
| Collector-base voltage | VCBO | 50 | V | Ta = 25 °C | 2 | ||
| Collector-emitter voltage | VCEO | 50 | V | Ta = 25 °C | 2 | ||
| Collector current | IC | 100 | mA | Ta = 25 °C | 2 | ||
| Collector power dissipation | PC | 150 | mW | Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 mm) | 2 | ||
| Junction temperature | Tj | 150 | °C | 2 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
RN1107MFV - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723 (KiCad packages3D, STEP)
- 3D model files:
rn1107mfv-etched.step/rn1107mfv-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rn1107mfv.step/rn1107mfv.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (8 pp, sha256
16c30d61bad4f8f8, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RN1107MFV
**TOSHIBA** · Digital Transistors · SOT-723
RN1107MFV from TOSHIBA, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN bias-resistor transistor, with the integrated input bias resistor R1 between base and the internal network. |
| 2 | Emitter | passive | Emitter terminal of the NPN bias-resistor transistor, referenced as the emitter in the absolute maximum ratings and electrical characteristics. |
| 3 | Collector | passive | Collector terminal of the NPN bias-resistor transistor, rated for collector current IC and collector-emitter voltage VCEO as stated in the absolute maximum ratings. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-723 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO | | | 100 | nA | VCB = 50 V, IE = 0 mA | 3 |
| Collector cut-off current | ICEO | | | 500 | nA | VCE = 50 V, IB = 0 mA | 3 |
| DC current gain | hFE | 80 | | | | VCE = 5 V, IC = 10 mA | 3 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.3 | V | IC = 5 mA, IB = 0.5 mA | 3 |
| Input resistance | R1 | 7 | 10 | 13 | kΩ | | 3 |
| Resistor ratio | R1/R2 | 0.17 | 0.213 | 0.255 | | | 3 |
| Collector-base voltage | VCBO | | | 50 | V | Ta = 25 °C | 2 |
| Collector-emitter voltage | VCEO | | | 50 | V | Ta = 25 °C | 2 |
| Collector current | IC | | | 100 | mA | Ta = 25 °C | 2 |
| Collector power dissipation | PC | | | 150 | mW | Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 mm) | 2 |
| Junction temperature | Tj | | | 150 | °C | | 2 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 2 |
## CAD (KiCad official)
- Symbol: `RN1107MFV`
- Footprint: `Package_TO_SOT_SMD:SOT-723`
- 3D model: SOT-723 (KiCad packages3D, STEP)
- 3D model files: `rn1107mfv-etched.step` / `rn1107mfv-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rn1107mfv.step` / `rn1107mfv.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](docs/rn1107mfv-datasheet.pdf) (8 pp, sha256 `16c30d61bad4f8f8`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rn1107mfv-datasheet.pdf)