component
RN1102MFV
Public Made by Adomby adom
TOSHIBA Digital Transistors, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| rn1102mfv-etched.glb | 17d ago |
| rn1102mfv-etched.step | 17d ago |
| rn1102mfv-hero.glb | 17d ago |
| rn1102mfv-hero.overlay.json | 17d ago |
| rn1102mfv.glb | 17d ago |
| rn1102mfv.kicad_mod | 17d ago |
| rn1102mfv.kicad_sym | 17d ago |
| rn1102mfv.lbr | 17d ago |
| rn1102mfv.step | 17d ago |
RN1102MFV
TOSHIBA · Digital Transistors · SOT-723
RN1102MFV from TOSHIBA, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the NPN transistor with built-in bias resistors R1 = 10 kΩ in series and R2 = 10 kΩ to emitter for RN1102MFV. |
| 2 | Emitter | passive | Emitter of the NPN transistor; VEBO rating is 10 V. |
| 3 | Collector | passive | Collector of the NPN transistor; VCBO and VCEO are 50 V and IC maximum is 100 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-723 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current | ICBO | 100 | nA | VCB = 50 V, IE = 0 mA | 4 | ||
| Collector cut-off current (CE, base open) | ICEO | 500 | nA | VCE = 50 V, IB = 0 mA | 4 | ||
| Emitter cut-off current | IEBO | 0.71 | mA | VEB = 10 V, IC = 0 mA | 4 | ||
| DC current gain | hFE | 50 | VCE = 5 V, IC = 10 mA | 4 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.1 | 0.3 | V | IC = 5 mA, IB = 0.5 mA | 4 | |
| Input voltage (ON) | VI(ON) | 1.2 | V | VCE = 0.2 V, IC = 5 mA | 4 | ||
| Input resistance | R1 | 7 | 10 | 13 | kΩ | 4 | |
| Resistor ratio | R1/R2 | 0.8 | 1 | 1.2 | 4 | ||
| Bias resistor R2 (nominal, as printed in bias resistor table) | R2 | 10 | kΩ | 1 | |||
| Collector-base voltage | VCBO | 50 | V | Ta = 25 °C | 3 | ||
| Collector-emitter voltage | VCEO | 50 | V | Ta = 25 °C | 3 | ||
| Emitter-base voltage | VEBO | 10 | V | Ta = 25 °C | 3 | ||
| Collector current | IC | 100 | mA | Ta = 25 °C | 3 | ||
| Collector power dissipation | PC | 150 | mW | Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm), Note 1 | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 3 |
CAD (KiCad official)
- Symbol:
RN1102MFV - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
rn1102mfv-etched.step/rn1102mfv-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rn1102mfv.step/rn1102mfv.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (11 pp, sha256
b1ce78547f27a130, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).