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RJJ0315DSP-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RJJ0315DSP-VB

VBsemi Elec · MOSFETs · SO-8

RJJ0315DSP-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the device is rated VDS = -30 V with continuous drain current ID = -18 A at TC = 25 °C (package limited).
2 S passive Source terminal of the P-channel MOSFET; the device is rated VDS = -30 V with continuous drain current ID = -18 A at TC = 25 °C (package limited).
3 S passive Source terminal of the P-channel MOSFET; the device is rated VDS = -30 V with continuous drain current ID = -18 A at TC = 25 °C (package limited).
4 G input Gate terminal of the P-channel MOSFET; gate-source threshold VGS(th) is -1 V to -2.2 V at VDS = VGS, ID = 250 μA.
5 D passive Drain terminal of the P-channel MOSFET; drain-source breakdown voltage is -30 V minimum at VGS = 0 V, ID = -250 μA.
6 D passive Drain terminal of the P-channel MOSFET; drain-source breakdown voltage is -30 V minimum at VGS = 0 V, ID = -250 μA.
7 D passive Drain terminal of the P-channel MOSFET; drain-source breakdown voltage is -30 V minimum at VGS = 0 V, ID = -250 μA.
8 D passive Drain terminal of the P-channel MOSFET; drain-source breakdown voltage is -30 V minimum at VGS = 0 V, ID = -250 μA.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -30 V 1
Continuous drain current ID -18 A TJ = 150 °C; TC = 25 °C 1
Continuous drain current ID -13 A TJ = 150 °C; TC = 70 °C 1
Continuous drain current ID -11 A TJ = 150 °C; TA = 25 °C 1
Continuous drain current ID -8 A TJ = 150 °C; TA = 70 °C 1
Pulsed drain current IDM -145 A t = 100 μs 1
Continuous source-drain diode current IS -5 A TC = 25 °C 1
Continuous source-drain diode current IS -2.8 A TA = 25 °C; notes b, c 1
Single pulse avalanche energy EAS 31.2 mJ 1
Maximum power dissipation 5.6 W TC = 25 °C 1
Maximum power dissipation 3.6 W TC = 70 °C 1
Maximum power dissipation 3.1 W TA = 25 °C; notes b, c 1
Maximum power dissipation 2 W TA = 70 °C; notes b, c 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations (peak temperature) 260 °C note c: t = 10 s 1
Maximum junction-to-ambient RthJA 34 40 °C/W t ≤ 10 s; note b 1
Maximum junction-to-case (drain) RthJF 18 22 °C/W Steady state 1
Drain-source breakdown voltage VDS -30 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -1 -2.2 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS 100 nA VDS = 0 V, VGS = +16 / -20 V 2
Zero gate voltage drain current IDSS -1 μA VDS = -30 V, VGS = 0 V 2
Zero gate voltage drain current IDSS -15 μA VDS = -30 V, VGS = 0 V, TJ = 70 °C 2
On-state drain current ID(on) -40 A VDS -10 V, VGS = -10 V 2
Total gate charge Qg 56 84 nC VDS = -15 V, VGS = -10 V, ID = -10 A 2
Gate resistance Rg 1.5 3.5 6 Ω f = 1 MHz 2
Turn-on delay time td(on) 5 30 ns VDD = -15 V, RL = 1.5, ID -10 A, VGEN = -10 V, Rg = 1 2
Rise time tr 6 12 ns VDD = -15 V, RL = 1.5, ID -10 A, VGEN = -10 V, Rg = 1 2
Turn-off delay time td(off) 39 78 ns VDD = -15 V, RL = 1.5, ID -10 A, VGEN = -10 V, Rg = 1 2
Fall time tf 10 20 ns VDD = -15 V, RL = 1.5, ID -10 A, VGEN = -10 V, Rg = 1 2
Turn-on delay time td(on) 34 68 ns VDD = -15 V, RL = 1.5, ID -10 A, VGEN = -4.5 V, Rg = 1 2
Rise time tr 86 172 ns VDD = -15 V, RL = 1.5, ID -10 A, VGEN = -4.5 V, Rg = 1 2
Turn-off delay time td(off) 31 62 ns VDD = -15 V, RL = 1.5, ID -10 A, VGEN = -4.5 V, Rg = 1 2
Fall time tf 22 44 ns VDD = -15 V, RL = 1.5, ID -10 A, VGEN = -4.5 V, Rg = 1 2
Continuous source-drain diode current IS -5 A TC = 25 °C 2
Pulse diode forward current ISM -150 A 2
Body diode voltage VSD -0.73 -1.1 V IS = -5 A, VGS = 0 V 2
Body diode reverse recovery time trr 88 ns IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 41 82 nC IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper d. The SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation 1

CAD (KiCad official)

  • Symbol: RJJ0315DSP-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: rjj0315dsp-vb-etched.step / rjj0315dsp-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rjj0315dsp-vb.step / rjj0315dsp-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 ae016e34a0f87845, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF