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RHP020N06T100

Public Made by Adom

by adom

ROHM Semicon MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RHP020N06T100

ROHM Semicon · MOSFETs · SOT-89

RHP020N06T100 from ROHM Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (VGSS), and the gate threshold VGS(th) is 1.0 to 2.5 V at VDS = 10 V, ID = 1 mA.
2 Drain passive Drain terminal; the drain-source voltage is rated at 60 V (VDSS) and the continuous drain current at ±2 A (ID), with pulsed drain current ±8 A (IDP, Pw ≤ 10 µs, duty cycle ≤ 1%).
3 Source passive Source terminal and reference for VGS; the body diode conducts source-to-drain with a forward voltage VSD of at most 1.2 V at IS = 2 A, VGS = 0 V.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source leakage IGSS -10 10 µA VGS= ±20V, VDS=0V 2
Drain-source breakdown voltage V(BR)DSS 60 V ID= 1mA, VGS=0V 2
Zero gate voltage drain current IDSS 1 µA VDS= 60V, VGS=0V 2
Gate threshold voltage VGS (th) 1 2.5 V VDS= 10V, ID= 1mA 2
Static drain-source on-state resistance RDS (on) 150 200 mΩ ID= 2A, VGS= 10V 2
Static drain-source on-state resistance RDS (on) 200 280 mΩ ID= 2A, VGS= 4.5V 2
Static drain-source on-state resistance RDS (on) 240 340 mΩ ID= 2A, VGS= 4V 2
Forward transfer admittance Yfs 2 S VDS= 10V, ID= 2A 2
Forward voltage (body diode) VSD 1.2 V IS= 2A, VGS=0V 2
Drain-source voltage VDSS 60 V Ta=25°C 1
Gate-source voltage VGSS -20 20 V Ta=25°C 1
Drain current, continuous ID -2 2 A Ta=25°C, continuous 1
Drain current, pulsed IDP -8 8 A Pw≤10µs, Duty cycle≤1% 1
Source current, continuous IS 2 A Ta=25°C, continuous 1
Source current, pulsed ISP 8 A Pw≤10µs, Duty cycle≤1% 1
Total power dissipation PD 2 W Mounted on 40×40×0.7mm ceramic board 1
Total power dissipation PD 500 mW 1
Channel temperature Tch 150 °C 1
Range of storage temperature Tstg -55 150 °C 1
Channel to ambient thermal resistance Rth(ch-a) 250 °C/W 1
Channel to ambient thermal resistance Rth(ch-a) 62.5 °C/W Mounted on 40×40×0.7mm ceramic board 1

CAD (KiCad official)

  • Symbol: RHP020N06T100
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: rhp020n06t100-etched.step / rhp020n06t100-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rhp020n06t100.step / rhp020n06t100.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (5 pp, sha256 36bcd44c259ca481, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF