component
RHK003N06T146
Public Made by Adomby adom
ROHM Semicon MOSFETs, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 11d ago |
| viewers | 11d ago |
| package.json | 11d ago |
| page.json | 11d ago |
| README.md | 11d ago |
| rhk003n06t146-etched.glb | 11d ago |
| rhk003n06t146-etched.step | 11d ago |
| rhk003n06t146-hero.glb | 11d ago |
| rhk003n06t146-hero.overlay.json | 11d ago |
| rhk003n06t146.glb | 11d ago |
| rhk003n06t146.kicad_mod | 11d ago |
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| rhk003n06t146.lbr | 11d ago |
| rhk003n06t146.step | 11d ago |
RHK003N06T146
ROHM Semicon · MOSFETs · TO-236-3(SOT-23-3)
RHK003N06T146 from ROHM Semicon, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with internal ESD protection diode to source; gate-source voltage limited to ±20 V and threshold 1.0 to 2.5 V at VDS = 10 V, ID = 1 mA. |
| 2 | Source | passive | Source terminal, connected to the body diode anode and ESD protection diode, with continuous body-diode forward current up to 200 mA. |
| 3 | Drain | passive | Drain terminal rated for 60 V drain-source voltage and ±300 mA continuous drain current (±1.2 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | 60 | V | Ta = 25°C | 1 | ||
| Continuous drain current | ID | -300 | 300 | mA | Ta = 25°C | 1 | |
| Pulsed drain current | IDP | -1.2 | 1.2 | A | Pw≦10μs, Duty cycle≦1% | 1 | |
| Gate-Source voltage | VGSS | -20 | 20 | V | Ta = 25°C | 1 | |
| Power dissipation | PD | 200 | mW | Each terminal mounted on a reference land | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-ambient | RthJA | 625 | ℃/W | Each terminal mounted on a reference land | 2 | ||
| Drain-Source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 1mA | 2 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS | 66.1 | mV/℃ | ID = 1mA, ΔTj referenced to 25℃ | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 60V, VGS = 0V | 2 | ||
| Gate-Source leakage current | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 2.5 | V | VDS = 10V, ID = 1mA | 2 | |
| Gate threshold voltage temperature coefficient | ΔVGS(th) | -3 | mV/℃ | ID = 1mA, ΔTj referenced to 25℃ | 2 | ||
| Static drain-source on-state resistance | RDS(on) | 0.7 | 1 | Ω | VGS = 10V, ID = 300mA, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 1.1 | 1.5 | Ω | VGS = 4V, ID = 300mA, pulsed | 2 | |
| Forward transfer admittance | /Yfs/ | 200 | mS | VDS = 10V, ID = 300mA, pulsed | 2 | ||
| Total gate charge | Qg | 3 | 6 | nC | VDD ⋍ 30V, ID = 300mA, VGS = 10V | 3 | |
| Continuous forward current (body diode) | IS | 200 | mA | Ta = 25℃ | 3 | ||
| Pulse forward current (body diode) | ISP | 800 | mA | Pw≦10μs, Duty cycle≦1% | 3 | ||
| Forward voltage (body diode) | VSD | 1.2 | V | VGS = 0V, IS = 300mA, pulsed | 3 | ||
| Input capacitance | Ciss | 33 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Output capacitance | Coss | 14 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Reverse transfer capacitance | Crss | 9 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Turn-on delay time | td(on) | 6 | ns | VDD ⋍ 30V, VGS = 10V, ID = 150mA, RL ⋍ 200Ω, RG = 10Ω | 3 | ||
| Rise time | tr | 5 | ns | VDD ⋍ 30V, VGS = 10V, ID = 150mA, RL ⋍ 200Ω, RG = 10Ω | 3 | ||
| Turn-off delay time | td(off) | 13 | ns | VDD ⋍ 30V, VGS = 10V, ID = 150mA, RL ⋍ 200Ω, RG = 10Ω | 3 | ||
| Fall time | tf | 80 | ns | VDD ⋍ 30V, VGS = 10V, ID = 150mA, RL ⋍ 200Ω, RG = 10Ω | 3 | ||
| Gate-Source charge | Qgs | 0.6 | nC | VDD ⋍ 30V, ID = 300mA, VGS = 10V | 3 | ||
| Gate-Drain charge | Qgd | 0.5 | nC | VDD ⋍ 30V, ID = 300mA, VGS = 10V | 3 |
CAD (KiCad official)
- Symbol:
RHK003N06T146 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files:
rhk003n06t146-etched.step/rhk003n06t146-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rhk003n06t146.step/rhk003n06t146.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (12 pp, sha256
fb5d3d9be80203f9, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).