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RHK003N06T146

ROHM Semicon · MOSFETs · TO-236-3(SOT-23-3)

RHK003N06T146 from ROHM Semicon, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal with internal ESD protection diode to source; gate-source voltage limited to ±20 V and threshold 1.0 to 2.5 V at VDS = 10 V, ID = 1 mA.
2 Source passive Source terminal, connected to the body diode anode and ESD protection diode, with continuous body-diode forward current up to 200 mA.
3 Drain passive Drain terminal rated for 60 V drain-source voltage and ±300 mA continuous drain current (±1.2 A pulsed).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-236-3(SOT-23-3)
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source voltage VDSS 60 V Ta = 25°C 1
Continuous drain current ID -300 300 mA Ta = 25°C 1
Pulsed drain current IDP -1.2 1.2 A Pw≦10μs, Duty cycle≦1% 1
Gate-Source voltage VGSS -20 20 V Ta = 25°C 1
Power dissipation PD 200 mW Each terminal mounted on a reference land 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction-ambient RthJA 625 ℃/W Each terminal mounted on a reference land 2
Drain-Source breakdown voltage V(BR)DSS 60 V VGS = 0V, ID = 1mA 2
Breakdown voltage temperature coefficient ΔV(BR)DSS 66.1 mV/℃ ID = 1mA, ΔTj referenced to 25℃ 2
Zero gate voltage drain current IDSS 1 μA VDS = 60V, VGS = 0V 2
Gate-Source leakage current IGSS -10 10 μA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 1 2.5 V VDS = 10V, ID = 1mA 2
Gate threshold voltage temperature coefficient ΔVGS(th) -3 mV/℃ ID = 1mA, ΔTj referenced to 25℃ 2
Static drain-source on-state resistance RDS(on) 0.7 1 Ω VGS = 10V, ID = 300mA, pulsed 2
Static drain-source on-state resistance RDS(on) 1.1 1.5 Ω VGS = 4V, ID = 300mA, pulsed 2
Forward transfer admittance /Yfs/ 200 mS VDS = 10V, ID = 300mA, pulsed 2
Total gate charge Qg 3 6 nC VDD ⋍ 30V, ID = 300mA, VGS = 10V 3
Continuous forward current (body diode) IS 200 mA Ta = 25℃ 3
Pulse forward current (body diode) ISP 800 mA Pw≦10μs, Duty cycle≦1% 3
Forward voltage (body diode) VSD 1.2 V VGS = 0V, IS = 300mA, pulsed 3
Input capacitance Ciss 33 pF VGS = 0V, VDS = 10V, f = 1MHz 3
Output capacitance Coss 14 pF VGS = 0V, VDS = 10V, f = 1MHz 3
Reverse transfer capacitance Crss 9 pF VGS = 0V, VDS = 10V, f = 1MHz 3
Turn-on delay time td(on) 6 ns VDD ⋍ 30V, VGS = 10V, ID = 150mA, RL ⋍ 200Ω, RG = 10Ω 3
Rise time tr 5 ns VDD ⋍ 30V, VGS = 10V, ID = 150mA, RL ⋍ 200Ω, RG = 10Ω 3
Turn-off delay time td(off) 13 ns VDD ⋍ 30V, VGS = 10V, ID = 150mA, RL ⋍ 200Ω, RG = 10Ω 3
Fall time tf 80 ns VDD ⋍ 30V, VGS = 10V, ID = 150mA, RL ⋍ 200Ω, RG = 10Ω 3
Gate-Source charge Qgs 0.6 nC VDD ⋍ 30V, ID = 300mA, VGS = 10V 3
Gate-Drain charge Qgd 0.5 nC VDD ⋍ 30V, ID = 300mA, VGS = 10V 3

CAD (KiCad official)

  • Symbol: RHK003N06T146
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
  • 3D model files: rhk003n06t146-etched.step / rhk003n06t146-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rhk003n06t146.step / rhk003n06t146.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (12 pp, sha256 fb5d3d9be80203f9, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF