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RHK003N06-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RHK003N06-HXY

HXY MOSFET · MOSFETs · SOT-23

RHK003N06-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the N-channel MOSFET, with gate-source voltage limited to ±20 V and RDS(ON) specified at VGS=5V and 10V.
2 S passive Source of the N-channel MOSFET; the body diode conducts from source to drain with VSD max 1.2 V at IS=0.2A.
3 D passive Drain, on the single-lead side of the package; drain-source voltage is rated at 60 V and continuous drain current at 0.3 A (TA=25℃).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 0.3 A TJ=150℃, TA=25℃ 1
Continuous Drain Current ID 0.19 A TJ=150℃, TA=100℃ 1
Drain Current-Pulsed IDM 0.8 A Repetitive rating, pulse width limited by maximum junction temperature (Note 1) 1
Maximum Power Dissipation PD 0.35 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 350 ℃/W Surface mounted on FR4 board, t ≤ 10 sec (Note 2) 1
Drain-Source Breakdown Voltage BVDSS 60 68 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current IGSS 100 500 nA VGS=±10V,VDS=0V 2
Gate-Body Leakage Current IGSS 4 10 uA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.7 1.2 1.9 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 1.3 3 Ω VGS=5V, ID=0.1A 2
Drain-Source On-State Resistance RDS(ON) 1 2 Ω VGS=10V, ID=0.1A 2
Forward Transconductance gFS 0.1 S VDS=10V,ID=0.2A 2
Input Capacitance Clss 21 50 PF VDS=25V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 11 25 PF VDS=25V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 4.2 5 PF VDS=25V,VGS=0V, F=1.0MHz 2
Total Gate Charge Qg 1.7 3 nC VDS=10V,ID=0.3A, VGS=4.5V 2
Diode Forward Voltage (Note 3) VSD 1.2 V VGS=0V,IS=0.2A 2
Diode Forward Current (Note 2) IS 0.3 A 2

CAD (KiCad official)

  • Symbol: RHK003N06-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: rhk003n06-hxy-etched.step / rhk003n06-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rhk003n06-hxy.step / rhk003n06-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 47624378d0c4b472, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF