# RGPR30BM40HRTL

**ROHM Semicon** · IGBT Transistors / Modules · TO-252

RGPR30BM40HRTL from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with built-in gate-emitter protection diode (BVGES 12 to 17 V) and built-in gate-emitter resistance RGE of 8 to 24 kΩ; absolute maximum VGES is 10 V. |
| 2 | Collector | passive | Collector terminal; collector-emitter voltage VCES is 430 V maximum, collector current IC is 30 A, and BVCES is 370 to 430 V (self-clamped). |
| 3 | Emitter | passive | Emitter terminal; emitter-collector voltage VEC is 25 V maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCES |  |  | 430 | V | TC = 25°C | 1 |
| Gate-Emitter Voltage | VGES |  |  | 10 | V | TC = 25°C | 1 |
| Emitter-Collector Voltage | VEC |  |  | 25 | V | VGE = 0V | 1 |
| Collector Current | IC |  |  | 30 | A | TC = 25°C | 1 |
| Power Dissipation | PD |  |  | 125 | W | TC = 25°C | 1 |
| Avalanche Energy (Single Pulse) | EAS |  |  | 300 | mJ | Tj = 25°C | 1 |
| Avalanche Energy (Single Pulse) | EAS |  |  | 180 | mJ | Tj = 150°C | 1 |
| Operating Junction Temperature | Tj | -40 |  | 175 | °C |  | 1 |
| Storage Temperature | Tstg | -55 |  | 175 | °C |  | 1 |
| Thermal Resistance IGBT Junction-Case | Rθ(j-c) |  |  | 1.2 | °C/W |  | 2 |
| Collector-Emitter Breakdown Voltage | BVCES | 370 | 400 | 430 | V | IC = 2mA, VGE = 0V, Tj = 25°C | 2 |
| Collector-Emitter Breakdown Voltage | BVCES | 365 |  | 435 | V | IC = 2mA, VGE = 0V, Tj = -40 to 175°C | 2 |
| Emitter-Collector Breakdown Voltage | BVEC | 25 | 35 |  | V | IC = -10mA, VGE = 0V | 2 |
| Gate-Emitter Breakdown Voltage | BVGES | 12 |  | 17 | V | IG = 5mA, VCE = 0V | 2 |
| Collector Cut-off Current | ICES |  |  | 7 | µA | VCE = 250V, VGE = 0V, Tj = 25°C | 2 |
| Collector Cut-off Current | ICES |  |  | 100 | µA | VCE = 250V, VGE = 0V, Tj = 150°C | 2 |
| Gate-Emitter Leakage Current | IGES |  | 0.6 | 1.2 | mA | VGE = 10V, VCE = 0V | 2 |
| Gate-Emitter Threshold Voltage | VGE(th) | 1.3 | 1.7 | 2.1 | V | VCE = 5V, IC = 12mA, Tj = 25°C | 2 |
| Gate-Emitter Threshold Voltage | VGE(th) |  | 1.3 |  | V | VCE = 5V, IC = 12mA, Tj = 150°C | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | 1.6 | 2 | V | IC = 12A, VGE = 5V, Tj = 25°C | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | 1.8 | 2.1 | V | IC = 12A, VGE = 5V, Tj = 150°C | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | 1.17 | 1.5 | V | IC = 5A, VGE = 4.5V, Tj = 25°C | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | 1.19 |  | V | IC = 5A, VGE = 4.5V, Tj = 150°C | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | 1.7 | 2.1 | V | IC = 12A, VGE = 4V, Tj = 25°C | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | 1.9 |  | V | IC = 12A, VGE = 4V, Tj = 150°C | 3 |
| Gate-Emitter Resistance | RGE | 8 | 16 | 24 | kΩ |  | 3 |
| Gate Series Resistance | RG | 70 | 100 | 130 | Ω |  | 3 |
| Avalanche Energy (Single Pulse) | EAS | 300 |  |  | mJ | L = 5mH, VGE = 5V, VCC = 30V, RG = 1kΩ, Tj = 25°C | 3 |
| Avalanche Energy (Single Pulse) | EAS | 180 |  |  | mJ | L = 5mH, VGE = 5V, VCC = 30V, RG = 1kΩ, Tj = 150°C | 3 |
| Turn-on Delay Time | td(on) | 0.11 | 0.19 | 0.5 | µs | IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C | 3 |
| Rise Time | tr | 0.1 | 0.18 | 0.5 | µs | IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C | 3 |
| Turn-off Delay Time | td(off) | 0.9 | 1.4 | 4 | µs | IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C | 3 |
| Fall Time | tf | 0.8 | 1.8 | 5.5 | µs | IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C | 3 |
| Turn-on Delay Time | td(on) |  | 0.18 |  | µs | IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=150°C | 3 |
| Rise Time | tr |  | 0.21 |  | µs | IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=150°C | 3 |
| Turn-off Delay Time | td(off) |  | 1.7 |  | µs | IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=150°C | 3 |
| Fall Time | tf |  | 3 |  | µs | IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=150°C | 3 |
| Total Gate Charge | Qg |  | 22 |  | nC | VCE = 12V, IC = 10A, VGE = 5V | 3 |
| Input Capacitance | Cies |  | 1330 |  | pF | VCE = 10V, VGE = 0V, f = 1MHz | 3 |
| Output Capacitance | Coes |  | 220 |  | pF | VCE = 10V, VGE = 0V, f = 1MHz | 3 |
| Reverse Transfer Capacitance | Cres |  | 71 |  | pF | VCE = 10V, VGE = 0V, f = 1MHz | 3 |

## CAD (KiCad official)

- Symbol: `RGPR30BM40HRTL`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `rgpr30bm40hrtl-etched.step` / `rgpr30bm40hrtl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rgpr30bm40hrtl.step` / `rgpr30bm40hrtl.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](docs/rgpr30bm40hrtl-datasheet.pdf) (10 pp, sha256 `8968e29beac14137`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rgpr30bm40hrtl-datasheet.pdf)