component
RGPR20NS43HRTL
Public Made by Adomby adom
ROHM Semicon IGBT Transistors / Modules, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownRGPR20NS43HRTL
ROHM Semicon · IGBT Transistors / Modules · TO-263
RGPR20NS43HRTL from ROHM Semicon, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the IGBT with a built-in gate-emitter protection diode and gate-emitter resistance RGE of 8 to 24 kΩ (16 kΩ typ.). |
| 2 | Collector | passive | Collector terminal rated for a collector-emitter voltage VCES of 460 V max and a collector current IC of 20 A. |
| 3 | Emitter | passive | Emitter terminal with a minimum emitter-collector breakdown voltage BVEC of 25 V at IC = -10 mA, VGE = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector - Emitter Breakdown Voltage | BVCES | 400 | 430 | 460 | V | IC = 2mA, VGE = 0V, Tj = 25°C | 2 |
| Collector - Emitter Breakdown Voltage | BVCES | 395 | 465 | V | IC = 2mA, VGE = 0V, Tj = -40 to 175°C | 2 | |
| Gate - Emitter Breakdown Voltage | BVGES | 12 | 17 | V | IG = 5mA, VCE = 0V | 2 | |
| Gate - Emitter Threshold Voltage | VGE(th) | 1.3 | 1.7 | V | VCE = 5V, IC = 10mA | 2 | |
| Collector Cut-off Current | ICES | 7 | μA | VCE = 300V, VGE = 0V, Tj = 25°C | 2 | ||
| Emitter - Collector Breakdown Voltage | BVEC | 25 | 35 | V | IC = -10mA, VGE = 0V | 2 | |
| Collector - Emitter Saturation Voltage | VCE(sat) | 1.6 | V | IC = 10A, VGE = 5V, Tj = 25°C | 2 | ||
| Collector - Emitter Saturation Voltage | VCE(sat) | 1.7 | 2.1 | V | IC = 10A, VGE = 4V, Tj = 25°C | 3 | |
| Gate - Emitter Resistance | RGE | 8 | 16 | 24 | kΩ | 3 | |
| Gate Series Resistance | RG | 70 | 100 | 130 | Ω | 3 | |
| Avalanche Energy (Single Pulse) | EAS | 250 | mJ | Tj = 25°C, L = 5mH, VGE = 5V, VCC = 30V, RG = 1kΩ | 3 | ||
| Avalanche Energy (Single Pulse) | EAS | 150 | mJ | Tj = 150°C, L = 5mH, VGE = 5V, VCC = 30V, RG = 1kΩ | 3 | ||
| Total Gate Charge | Qg | 14 | nC | VCE = 12V, IC = 10A, VGE = 5V | 3 | ||
| Rise Time | tr | 0.1 | 0.18 | 0.5 | μs | IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C | 3 |
| Turn - on Delay Time | td(on) | 0.09 | 0.17 | 0.5 | μs | IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C | 3 |
| Fall Time | tf | 1.4 | 2.4 | 6 | μs | IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C | 3 |
| Turn - off Delay Time | td(off) | 0.8 | 1.3 | μs | IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=25°C | 3 | |
| Fall Time | tf | 3.9 | μs | IC = 8A, VCC = 300V, VGE = 5V, RG = 100Ω, L=5mH, Tj=150°C | 3 | ||
| Output Capacitance | Coes | 175 | pF | VGE = 0V | 3 | ||
| Reverse Transfer Capacitance | Cres | 55 | pF | f = 1MHz | 3 | ||
| Input Capacitance | Cies | 1000 | pF | VCE = 10V | 3 | ||
| Thermal Resistance IGBT Junction - Case | Rθ(j-c) | 1.4 | °C/W | 2 | |||
| Collector Current | IC | 20 | A | 1 | |||
| Collector - Emitter Voltage | VCES | 460 | V | 1 | |||
| Gate - Emitter Voltage | VGES | 10 | V | 1 | |||
| Emitter-Collector Voltage | VEC | 25 | V | VGE = 0V | 1 | ||
| Avalanche Energy (Single Pulse) | EAS | 250 | mJ | Tj = 25°C | 1 | ||
| Avalanche Energy (Single Pulse) | EAS | 150 | mJ | Tj = 150°C | 1 | ||
| Power Dissipation | PD | 107 | W | TC = 25°C | 1 | ||
| Operating Junction Temperature | Tj | -40 | 175 | °C | 1 | ||
| Storage Temperature | Tstg | -55 | 175 | °C | 1 |
CAD (KiCad official)
- Symbol:
RGPR20NS43HRTL - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
rgpr20ns43hrtl-etched.step/rgpr20ns43hrtl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rgpr20ns43hrtl.step/rgpr20ns43hrtl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (10 pp, sha256
714754988f1932c0, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).