component
RFP30P05-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RFP30P05-VB
VBsemi Elec · MOSFETs · TO-220AB
RFP30P05-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -60 V and continuous drain current of -45 A at TC = 25 °C (also connected to the case/tab). |
| 3 | S | passive | Source of the P-channel MOSFET, with body diode continuous current IS of -40 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 45 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | 39 | A | TC = 70 °C, TJ = 150 °C | 1 | ||
| Pulsed Drain Current | IDM | -100 | A | t = 300 µs | 1 | ||
| Avalanche Current | IAS | -32 | A | 1 | |||
| Single Avalanche Energy | EAS | 51 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 41.7 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.1 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient (PCB Mount) | RthJA | 60 | °C/W | mounted on 1" square PCB (FR-4) | 1 | ||
| Junction-to-Case (Drain) | RthJC | 3 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | -60 | V | VDS = 0 V, ID = - 250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Body Leakage | IGSS | 250 | nA | VDS = 0 V, VGS = ± 20 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | µA | VDS = - 60 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -250 | µA | VDS = - 60 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| On-State Drain Current | ID(on) | -30 | A | VDS ≤ - 10 V, VGS = - 10 V | 2 | ||
| Gate Resistance | Rg | 0.5 | 2.5 | 5 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | 67 | 100 | nC | VDS = - 30 V, VGS = - 10 V, ID = - 14 A | 2 | |
| Forward Voltage | VSD | -0.8 | -1.5 | V | IF = - 10 A, VGS = 0 V | 2 | |
| Continuous Source Current | IS | -40 | A | TC = 25 °C | 2 | ||
| Pulsed Source Current | ISM | -100 | A | TC = 25 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.048 | Ω | VGS = - 10 V, ID = - 14 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.056 | Ω | VGS = - 4.5 V, ID = - 12 A | 2 | ||
| Forward Transconductance | gfs | 40 | S | VDS = - 20 V, ID = - 14 A | 2 |
CAD (KiCad official)
- Symbol:
RFP30P05-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
rfp30p05-vb-etched.step/rfp30p05-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rfp30p05-vb.step/rfp30p05-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
c255184f50583c7e, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RFP30P05-VB
**VBsemi Elec** · MOSFETs · TO-220AB
RFP30P05-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -60 V and continuous drain current of -45 A at TC = 25 °C (also connected to the case/tab). |
| 3 | S | passive | Source of the P-channel MOSFET, with body diode continuous current IS of -40 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -60 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 45 | A | TC = 25 °C, TJ = 150 °C | 1 |
| Continuous Drain Current | ID | | | 39 | A | TC = 70 °C, TJ = 150 °C | 1 |
| Pulsed Drain Current | IDM | | | -100 | A | t = 300 µs | 1 |
| Avalanche Current | IAS | | | -32 | A | | 1 |
| Single Avalanche Energy | EAS | | | 51 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 41.7 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 2.1 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Junction-to-Ambient (PCB Mount) | RthJA | | | 60 | °C/W | mounted on 1" square PCB (FR-4) | 1 |
| Junction-to-Case (Drain) | RthJC | | | 3 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | -60 | | | V | VDS = 0 V, ID = - 250 µA | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Body Leakage | IGSS | | | 250 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = - 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -50 | µA | VDS = - 60 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -250 | µA | VDS = - 60 V, VGS = 0 V, TJ = 150 °C | 2 |
| On-State Drain Current | ID(on) | -30 | | | A | VDS ≤ - 10 V, VGS = - 10 V | 2 |
| Gate Resistance | Rg | 0.5 | 2.5 | 5 | Ω | f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 67 | 100 | nC | VDS = - 30 V, VGS = - 10 V, ID = - 14 A | 2 |
| Forward Voltage | VSD | | -0.8 | -1.5 | V | IF = - 10 A, VGS = 0 V | 2 |
| Continuous Source Current | IS | | | -40 | A | TC = 25 °C | 2 |
| Pulsed Source Current | ISM | | | -100 | A | TC = 25 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.048 | Ω | VGS = - 10 V, ID = - 14 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.056 | Ω | VGS = - 4.5 V, ID = - 12 A | 2 |
| Forward Transconductance | gfs | | 40 | | S | VDS = - 20 V, ID = - 14 A | 2 |
## CAD (KiCad official)
- Symbol: `RFP30P05-VB`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `rfp30p05-vb-etched.step` / `rfp30p05-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rfp30p05-vb.step` / `rfp30p05-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/rfp30p05-vb-datasheet.pdf) (7 pp, sha256 `c255184f50583c7e`, retrieved 2026-10-24, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rfp30p05-vb-datasheet.pdf)