component
RFN1L6STE25
Public Made by Adomby adom
ROHM Semicon Fast Recovery / High Efficiency Diodes, SMA. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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RFN1L6STE25
ROHM Semicon · Fast Recovery / High Efficiency Diodes · SMA
RFN1L6STE25 from ROHM Semicon, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | 1.15 | 1.45 | V | IF=0.8A | 1 | |
| Reverse current | IR | 0.01 | 1 | mA | VR=600V | 1 | |
| Reverse recovery time | trr | 25 | 35 | ns | IF=0.5A, IR=1A, Irr=0.25×IR | 1 | |
| Thermal resistance, junction to lead | Rth(j-l) | 23 | °C/W | Junction to Lead | 1 | ||
| Operating junction temperature | Tj | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Reverse voltage | VR | 600 | V | 1 | |||
| Repetitive peak reverse voltage | VRM | 600 | V | 1 | |||
| Average rectified forward current | Io | 0.8 | A | Tl=115ºC, 60Hz half sin wave, glass epoxy substrate, resistive load, duty≦0.5 | 1 | ||
| Non-repetitive peak forward surge current | IFSM | 15 | A | 60Hz half sin wave, non-repetitive at Tj=25ºC | 1 |
CAD (KiCad official)
- Symbol:
RFN1L6STE25 - Footprint:
Diode_SMD:D_SMA - 3D model: SMA (KiCad packages3D, STEP)
- 3D model files:
rfn1l6ste25-etched.step/rfn1l6ste25-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rfn1l6ste25.step/rfn1l6ste25.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (7 pp, sha256
b0fb409a61bb27b8, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RFN1L6STE25
**ROHM Semicon** · Fast Recovery / High Efficiency Diodes · SMA
RFN1L6STE25 from ROHM Semicon, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF | | 1.15 | 1.45 | V | IF=0.8A | 1 |
| Reverse current | IR | | 0.01 | 1 | mA | VR=600V | 1 |
| Reverse recovery time | trr | | 25 | 35 | ns | IF=0.5A, IR=1A, Irr=0.25×IR | 1 |
| Thermal resistance, junction to lead | Rth(j-l) | | | 23 | °C/W | Junction to Lead | 1 |
| Operating junction temperature | Tj | | | 150 | °C | | 1 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 1 |
| Reverse voltage | VR | | | 600 | V | | 1 |
| Repetitive peak reverse voltage | VRM | | | 600 | V | | 1 |
| Average rectified forward current | Io | | | 0.8 | A | Tl=115ºC, 60Hz half sin wave, glass epoxy substrate, resistive load, duty≦0.5 | 1 |
| Non-repetitive peak forward surge current | IFSM | | | 15 | A | 60Hz half sin wave, non-repetitive at Tj=25ºC | 1 |
## CAD (KiCad official)
- Symbol: `RFN1L6STE25`
- Footprint: `Diode_SMD:D_SMA`
- 3D model: SMA (KiCad packages3D, STEP)
- 3D model files: `rfn1l6ste25-etched.step` / `rfn1l6ste25-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rfn1l6ste25.step` / `rfn1l6ste25.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588902806636146688) (7 pp, sha256 `b0fb409a61bb27b8`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rfn1l6ste25-datasheet.pdf)