component
RE1E002SPTCL
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOT-416. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
RE1E002SPTCL
ROHM Semicon · MOSFETs · SOT-416
RE1E002SPTCL from ROHM Semicon, in a SOT-416. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel MOSFET, with the body diode between source and drain and the built-in G-S ESD protection diode connected to gate; VGSS is limited to ±20 V. |
| 2 | Gate | input | Gate terminal with built-in G-S protection diode, rated VGSS ±20 V and threshold VGS(th) of -1.0 V to -2.5 V at VDS = -10 V, ID = -1 mA. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET, rated VDSS -30 V and continuous ID ±250 mA (pulsed ±500 mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-416 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | -30 | V | 1 | |||
| Continuous drain current | ID | -250 | 250 | mA | 1 | ||
| Pulsed drain current | IDP | -500 | 500 | mA | Pw≦10μs, Duty cycle≦1% | 1 | |
| Gate - Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Power dissipation | PD | 150 | mW | Each terminal mounted on a reference land | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - ambient | RthJA | 833 | ℃/W | Each terminal mounted on a reference land | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | -30 | V | VGS = 0V, ID = -1mA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -30V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | -1 | -2.5 | V | VDS = -10V, ID = -1mA | 2 | |
| Static drain - source on-state resistance (VGS = -10V, ID = -250mA) | RDS(on) | 0.9 | 1.4 | Ω | VGS = -10V, ID = -250mA | 2 | |
| Static drain - source on-state resistance (VGS = -4.5V, ID = -150mA) | RDS(on) | 1.4 | 2.1 | Ω | VGS = -4.5V, ID = -150mA | 2 | |
| Static drain - source on-state resistance (VGS = -4V, ID = -150mA) | RDS(on) | 1.6 | 2.4 | Ω | VGS = -4V, ID = -150mA | 2 | |
| Static drain - source on-state resistance (Tj = 125℃) | RDS(on) | 1.2 | 1.7 | Ω | VGS = -10V, ID = -250mA, Tj = 125℃ | 2 | |
| Forward transfer admittance | /Yfs/ | 200 | mS | VDS = -10V, ID = -150mA | 2 | ||
| Continuous forward current (body diode) | IS | 125 | mA | Ta = 25℃ | 3 | ||
| Pulse forward current (body diode) | ISP | 500 | mA | Pw≦10μs, Duty cycle≦1% | 3 | ||
| Forward voltage | VSD | -1.2 | V | VGS = 0V, IS = -100mA | 3 |
CAD (KiCad official)
- Symbol:
RE1E002SPTCL - Footprint:
Package_TO_SOT_SMD:SOT-416 - 3D model: SOT-416, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
re1e002sptcl-etched.step/re1e002sptcl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);re1e002sptcl.step/re1e002sptcl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (13 pp, sha256
3dbcc58d51778e3a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RE1E002SPTCL
**ROHM Semicon** · MOSFETs · SOT-416
RE1E002SPTCL from ROHM Semicon, in a SOT-416. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel MOSFET, with the body diode between source and drain and the built-in G-S ESD protection diode connected to gate; VGSS is limited to ±20 V. |
| 2 | Gate | input | Gate terminal with built-in G-S protection diode, rated VGSS ±20 V and threshold VGS(th) of -1.0 V to -2.5 V at VDS = -10 V, ID = -1 mA. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET, rated VDSS -30 V and continuous ID ±250 mA (pulsed ±500 mA). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-416 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | -30 | | | V | | 1 |
| Continuous drain current | ID | -250 | | 250 | mA | | 1 |
| Pulsed drain current | IDP | -500 | | 500 | mA | Pw≦10μs, Duty cycle≦1% | 1 |
| Gate - Source voltage | VGSS | -20 | | 20 | V | | 1 |
| Power dissipation | PD | | | 150 | mW | Each terminal mounted on a reference land | 1 |
| Junction temperature | Tj | | | 150 | ℃ | | 1 |
| Operating junction and storage temperature range | Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal resistance, junction - ambient | RthJA | | | 833 | ℃/W | Each terminal mounted on a reference land | 2 |
| Drain - Source breakdown voltage | V(BR)DSS | -30 | | | V | VGS = 0V, ID = -1mA | 2 |
| Zero gate voltage drain current | IDSS | | | -1 | μA | VDS = -30V, VGS = 0V | 2 |
| Gate - Source leakage current | IGSS | -10 | | 10 | μA | VGS = ±20V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | -1 | | -2.5 | V | VDS = -10V, ID = -1mA | 2 |
| Static drain - source on-state resistance (VGS = -10V, ID = -250mA) | RDS(on) | | 0.9 | 1.4 | Ω | VGS = -10V, ID = -250mA | 2 |
| Static drain - source on-state resistance (VGS = -4.5V, ID = -150mA) | RDS(on) | | 1.4 | 2.1 | Ω | VGS = -4.5V, ID = -150mA | 2 |
| Static drain - source on-state resistance (VGS = -4V, ID = -150mA) | RDS(on) | | 1.6 | 2.4 | Ω | VGS = -4V, ID = -150mA | 2 |
| Static drain - source on-state resistance (Tj = 125℃) | RDS(on) | | 1.2 | 1.7 | Ω | VGS = -10V, ID = -250mA, Tj = 125℃ | 2 |
| Forward transfer admittance | /Yfs/ | 200 | | | mS | VDS = -10V, ID = -150mA | 2 |
| Continuous forward current (body diode) | IS | | | 125 | mA | Ta = 25℃ | 3 |
| Pulse forward current (body diode) | ISP | | | 500 | mA | Pw≦10μs, Duty cycle≦1% | 3 |
| Forward voltage | VSD | | | -1.2 | V | VGS = 0V, IS = -100mA | 3 |
## CAD (KiCad official)
- Symbol: `RE1E002SPTCL`
- Footprint: `Package_TO_SOT_SMD:SOT-416`
- 3D model: SOT-416, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `re1e002sptcl-etched.step` / `re1e002sptcl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `re1e002sptcl.step` / `re1e002sptcl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589929113587638272) (13 pp, sha256 `3dbcc58d51778e3a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/re1e002sptcl-datasheet.pdf)