# RD3T100CNTL1

**ROHM Semicon** · MOSFETs · TO-252

RD3T100CNTL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage is rated at ±30 V maximum, with a gate threshold of 3.25 to 5.25 V at VDS = 10 V, ID = 1 mA. |
| 2 | Drain | passive | Drain terminal (also the exposed tab); drain-source voltage is rated at 200 V and continuous drain current at ±10 A at Tc = 25°C. |
| 3 | Source | passive | Source terminal, connected to the body diode anode; continuous forward body-diode current is 10 A at Tc = 25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS |  |  | 200 | V |  | 1 |
| Continuous drain current, Tc = 25°C | ID | -10 |  | 10 | A | Tc = 25°C; printed as ±10, limited only by maximum temperature allowed | 1 |
| Continuous drain current, Tc = 100°C | ID | -5.4 |  | 5.4 | A | Tc = 100°C; printed as ±5.4 | 1 |
| Pulsed drain current | IDP | -40 |  | 40 | A | Pw ≤ 10μs, Duty cycle ≤ 1%; printed as ±40 | 1 |
| Gate - Source voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Avalanche energy, single pulse | EAS |  |  | 7.35 | mJ | L ≈ 500μH, VDD = 50V, RG = 25Ω, starting Tj = 25°C | 1 |
| Avalanche current, single pulse | IAS |  |  | 5 | A | L ≈ 500μH, VDD = 50V, RG = 25Ω, starting Tj = 25°C | 1 |
| Power dissipation | PD |  |  | 85 | W | Tc = 25°C | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Operating junction and storage temperature range | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction - case | RthJC |  |  | 1.46 | ℃/W |  | 2 |
| Soldering temperature, wavesoldering | Tsold |  |  | 265 | ℃ | wavesoldering for 10s | 2 |
| Drain - Source breakdown voltage | V(BR)DSS | 200 |  |  | V | VGS = 0V, ID = 1mA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 10 | μA | VDS = 200V, VGS = 0V, Tj = 25°C | 2 |
| Gate - Source leakage current | IGSS | -100 |  | 100 | nA | VGS = ±30V, VDS = 0V; printed as ±100 | 2 |
| Gate threshold voltage | VGS(th) | 3.25 |  | 5.25 | V | VDS = 10V, ID = 1mA | 2 |
| Static drain - source on - state resistance | RDS(on) |  | 140 | 182 | mΩ | VGS = 10V, ID = 5A; pulsed | 2 |
| Forward transfer admittance | /Yfs/ | 2.1 | 4.2 |  | S | VDS = 10V, ID = 5A; pulsed | 2 |
| Continuous forward current | IS |  |  | 10 | A | TC = 25℃ | 3 |
| Pulse forward current | ISP |  |  | 40 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 3 |
| Forward voltage | VSD |  |  | 1.5 | V | VGS = 0V, IS = 10A; pulsed | 3 |

## CAD (KiCad official)

- Symbol: `RD3T100CNTL1`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `rd3t100cntl1-etched.step` / `rd3t100cntl1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rd3t100cntl1.step` / `rd3t100cntl1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8597546352234401792) (14 pp, sha256 `ba38190aa655138e`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rd3t100cntl1-datasheet.pdf)