main
Ray Set visibility: public 9a68bdb 14d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "rd3p200snfratl",
  "title": "RD3P200SNFRATL",
  "brief": "ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
    "rd3p200snfratl",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "RD3P200SNFRATL",
    "manufacturer": "ROHM Semicon",
    "package": "TO-252",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912300829261824",
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      "model_3d_step_plain": "rd3p200snfratl.step",
      "lbr": "rd3p200snfratl.lbr"
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    "distributor_links": {
      "lcsc": "C507488",
      "digikey": "RD3P200SNFRATLTR-ND",
      "mouser": "755-RD3P200SNFRATL"
    },
    "distributor_check": {
      "checked_at": "2026-10-20T20:58:40Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "RD3P200SNFRATLTR-ND",
        "status": "found",
        "lifecycle": "Active"
      },
      "mouser": {
        "pn": "755-RD3P200SNFRATL",
        "status": "found"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "Gate",
        "type": "input",
        "description": "Gate terminal with ESD protection diode to source; VGSS rating is ±20 V and gate threshold is 1.0 to 2.5 V at VDS = 10 V, ID = 1 mA."
      },
      {
        "number": "2",
        "name": "Drain",
        "type": "passive",
        "description": "Drain terminal (also the tab) with VDSS of 100 V and continuous drain current ID of ±20 A (pulsed ±80 A)."
      },
      {
        "number": "3",
        "name": "Source",
        "type": "passive",
        "description": "Source terminal connected to the body diode anode, with continuous body-diode forward current of 14 A at Ta = 25°C (pulsed 80 A)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pin numbers and names (1 Gate, 2 Drain, 3 Source) come from the inner circuit on page 1. The page 11; The datasheet text does not state that the tab is the drain. This is inferred from the outline photo",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 14,
        "cost_usd": 0.2773,
        "at": "2026-10-20T20:55:19"
      },
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912300829261824",
        "pages": 14,
        "sha256": "25b0906061a8f8ee",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
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        "file": "rd3p200snfratl.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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          6.5,
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        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
        "checked": "2026-10-20",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "rd3p200snfratl-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
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        "sha256": "467574ba7e969ee34ac8d5d6f3d1b89c7dfc1b85112a02077ba5fd88575b2165",
        "checked": "2026-10-20",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "ROHM Semicon",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "25b0906061a8f8ee928f279a0aea15f4e0808567927b5cf977cbd5418879a05b",
      "rows": [
        {
          "name": "Drain - Source voltage",
          "symbol": "VDSS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Continuous drain current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "Note *1: limited only by maximum temperature allowed",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed drain current",
          "symbol": "IDP",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": -80,
          "typ": null,
          "max": 80,
          "conditions": "Note *2: Pw≦10μs, Duty cycle≦1%",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate - Source voltage",
          "symbol": "VGSS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Avalanche current, single pulse",
          "symbol": "IAS",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 10,
          "conditions": "Note *3: L≒1mH, VDD = 50V, RG = 25Ω, Starting Tj = 25℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Avalanche energy, single pulse",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 72,
          "conditions": "Note *3: L≒1mH, VDD = 50V, RG = 25Ω, Starting Tj = 25℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Power dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 20,
          "conditions": "Note *4: Tc = 25℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Junction temperature",
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          "kind": "absolute_maximum",
          "unit": "℃",
          "min": null,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating junction and storage temperature range",
          "symbol": "Tstg",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction - case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": null,
          "max": 6.25,
          "conditions": "Note *4: Tc = 25℃",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain - Source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 100,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0V, ID = 1mA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS = 100V, VGS = 0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate - Source leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "μA",
          "min": -10,
          "typ": null,
          "max": 10,
          "conditions": "VGS = ±20V, VDS = 0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 1,
          "typ": null,
          "max": 2.5,
          "conditions": "VDS = 10V, ID = 1mA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Static drain - source on - state resistance (VGS = 10V)",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
          "max": 46,
          "conditions": "VGS = 10V, ID = 20A; *5 Pulsed",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Static drain - source on - state resistance (VGS = 4.0V)",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "VGS = 4.0V, ID = 20A; *5 Pulsed",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Forward transfer admittance",
          "symbol": "|Yfs|",
          "kind": "electrical",
          "unit": "S",
          "min": 15,
          "typ": null,
          "max": null,
          "conditions": "VDS = 10V, ID = 20A; *5 Pulsed",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Continuous forward current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 14,
          "conditions": "Note *1: Ta = 25℃",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Pulse forward current",
          "symbol": "ISP",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 80,
          "conditions": "Note *2: Pw≦10μs, Duty cycle≦1%",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Forward voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.5,
          "conditions": "VGS = 0V, IS = 20A; *5 Pulsed",
          "source_page": 3,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
  "sections": [
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    "breadcrumbs",
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  "discovery_triggers": [
    "rd3p200snfratl"
  ],
  "discovery_pitch": "RD3P200SNFRATL (ROHM Semicon) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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  "visibility": {
    "public": true
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}