component
RD3P07BBHTL1
Public Made by Adomby adom
ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
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| page.json | 8d ago |
| rd3p07bbhtl1-etched.glb | 8d ago |
| rd3p07bbhtl1-etched.step | 8d ago |
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| rd3p07bbhtl1-hero.overlay.json | 8d ago |
| rd3p07bbhtl1.glb | 8d ago |
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RD3P07BBHTL1
ROHM Semicon · MOSFETs · TO-252
RD3P07BBHTL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage is rated at ±20V (VGSS) with a threshold VGS(th) of 2.0 to 4.0V at ID = 1mA. |
| 2 | Drain | passive | Drain terminal (also the tab); drain-source voltage is rated at 100V (VDSS) with continuous current of ±70A at Tc = 25°C. |
| 3 | Source | passive | Source terminal connected to the body diode anode, with continuous body-diode forward current of 70A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | 100 | V | Ta = 25°C | 1 | ||
| Continuous drain current, silicon limit | ID | -80 | 80 | A | VGS=10V, Tc = 25°C, limited by silicon chip capability | 1 | |
| Continuous drain current | ID | -70 | 70 | A | Tc = 25°C, VGS=10V, limited only by max temperature | 1 | |
| Pulsed drain current | IDP | -320 | 320 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 1 | |
| Gate-Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Avalanche current, single pulse | IAS | 23 | A | L ≒ 0.1mH, VDD = 50V, RG = 25Ω, Starting Tj = 25℃ | 1 | ||
| Avalanche energy, single pulse | EAS | 43 | mJ | L ≒ 0.1mH, VDD = 50V, RG = 25Ω, Starting Tj = 25℃ | 1 | ||
| Power dissipation | PD | 89 | W | Tc = 25°C | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-case | RthJC | 1.4 | ℃/W | Tc=25℃ | 2 | ||
| Drain-Source breakdown voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 1mA | 2 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | 62.3 | mV/℃ | ID = 1mA, referenced to 25℃ | 2 | ||
| Zero gate voltage drain current | IDSS | 5 | μA | VDS = 100V, VGS = 0V | 2 | ||
| Gate-Source leakage current | IGSS | -500 | 500 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 1mA | 2 | |
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | -4.5 | mV/℃ | ID = 1mA, referenced to 25℃ | 2 | ||
| Static drain-source on-state resistance | RDS(on) | 5.9 | 7.7 | mΩ | VGS = 10V, ID = 70A | 2 | |
| Static drain-source on-state resistance | RDS(on) | 7.5 | 11.2 | mΩ | VGS = 6V, ID = 35A | 2 | |
| Gate resistance | RG | 0.9 | Ω | 2 | |||
| Forward transfer admittance | /Yfs/ | 26 | S | VDS = 5V, ID = 35A | 2 | ||
| Input capacitance | Ciss | 2410 | pF | VGS = 0V, VDS = 50V, f = 1MHz | 3 | ||
| Output capacitance | Coss | 460 | pF | VGS = 0V, VDS = 50V, f = 1MHz | 3 | ||
| Reverse transfer capacitance | Crss | 20 | pF | VGS = 0V, VDS = 50V, f = 1MHz | 3 | ||
| Turn-on delay time | td(on) | 24 | ns | VDD ≒ 50V, VGS = 10V, ID = 35A, RL ≒ 1.42Ω, RG = 10Ω | 3 | ||
| Rise time | tr | 25 | ns | VDD ≒ 50V, VGS = 10V, ID = 35A, RL ≒ 1.42Ω, RG = 10Ω | 3 | ||
| Turn-off delay time | td(off) | 58 | ns | VDD ≒ 50V, VGS = 10V, ID = 35A, RL ≒ 1.42Ω, RG = 10Ω | 3 | ||
| Fall time | tf | 29 | ns | VDD ≒ 50V, VGS = 10V, ID = 35A, RL ≒ 1.42Ω, RG = 10Ω | 3 | ||
| Total gate charge | Qg | 38 | nC | VDD ≒ 50V, ID = 50A, VGS = 10V | 3 | ||
| Total gate charge | Qg | 25 | nC | VDD ≒ 50V, ID = 50A, VGS = 6V | 3 | ||
| Gate-Source charge | Qgs | 8.5 | nC | VDD ≒ 50V, ID = 50A | 3 | ||
| Gate-Drain charge | Qgd | 9.8 | nC | VDD ≒ 50V, ID = 50A | 3 | ||
| Body diode continuous forward current | IS | 70 | A | Ta = 25℃ | 3 | ||
| Body diode pulse forward current | ISP | 320 | A | Ta = 25℃ | 3 | ||
| Body diode forward voltage | VSD | 1.2 | V | VGS = 0V, IS = 70A | 3 | ||
| Reverse recovery time | trr | 63 | ns | IS = 50A, VGS=0V, di/dt = 100A/μs | 3 | ||
| Reverse recovery charge | Qrr | 125 | nC | IS = 50A, VGS=0V, di/dt = 100A/μs | 3 |
CAD (KiCad official)
- Symbol:
RD3P07BBHTL1 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rd3p07bbhtl1-etched.step/rd3p07bbhtl1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rd3p07bbhtl1.step/rd3p07bbhtl1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (13 pp, sha256
213f91d2347f5a33, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).