component

RD3P05BATTL1

Public Made by Adom

by adom

ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsrd3p05battl1factory-2.0.0extractor-text

Verified RD3P05BATTL1

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: RD3P05BATTL1 · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 14-page datasheet
  • ✓distributor: lcsc C20109349, digikey 846-RD3P05BATTL1TR-ND, mouser 755-RD3P05BATTL1
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-u9hfu_f0/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ rd3p05battl1.kicad_sym✓ rd3p05battl1.kicad_mod✓ rd3p05battl1.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers rd3p05battl1: viewers · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
rd3p05battl1-etched.glb Publish 0.1.0 · Ray 8d ago
rd3p05battl1-etched.step rd3p05battl1: factory component page (tier=mfr) · Ray 8d ago
rd3p05battl1-hero.glb rd3p05battl1: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
rd3p05battl1-hero.overlay.json Publish 0.1.0 · Ray 8d ago
rd3p05battl1.glb Publish 0.1.0 · Ray 8d ago
rd3p05battl1.kicad_mod Publish 0.1.0 · Ray 8d ago
rd3p05battl1.kicad_sym Publish 0.1.0 · Ray 8d ago
rd3p05battl1.lbr Publish 0.1.0 · Ray 8d ago
rd3p05battl1.step Publish 0.1.0 · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 8d ago

RD3P05BATTL1

ROHM Semicon · MOSFETs · TO-252

RD3P05BATTL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; VGSS rating is ±20 V and gate threshold voltage is -2.0 to -4.0 V at ID = -1 mA.
2 Drain passive Drain terminal (also the tab); VDSS is -100 V and continuous drain current is ±50 A.
3 Source passive Source terminal with body diode to drain; continuous body-diode forward current is -50 A.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source voltage VDSS -100 V Ta = 25°C 1
Continuous drain current ID -50 50 A VGS = -10V, Tc=25℃, limited only by max temperature 1
Pulsed drain current IDP -100 100 A Pw ≤ 10μs, Duty cycle ≤ 1% 1
Gate-Source voltage VGSS -20 20 V Ta = 25°C 1
Avalanche current, single pulse IAS -25 A L ≈ 0.1mH, VDD = -50V, RG = 25Ω, starting Tj = 25℃ 1
Avalanche energy, single pulse EAS 44 mJ L ≈ 0.1mH, VDD = -50V, RG = 25Ω, starting Tj = 25℃ 1
Power dissipation PD 101 W Tc=25℃ 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction-case RthJC 1.23 ℃/W Tc=25℃ 2
Drain-Source breakdown voltage V(BR)DSS -100 V VGS = 0V, ID = -1mA 2
Breakdown voltage temperature coefficient ΔV(BR)DSS/ΔTj -68 mV/℃ ID = -1mA, referenced to 25℃ 2
Zero gate voltage drain current IDSS -1 μA VDS = -100V, VGS = 0V 2
Gate-Source leakage current IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) -4 -2 V VDS = VGS, ID = -1mA 2
Gate threshold voltage temperature coefficient ΔVGS(th)/ΔTj 5.1 mV/℃ ID = -1mA, referenced to 25℃ 2
Static drain-source on-state resistance RDS(on) 32 41 mΩ VGS = -10V, ID = -25A, pulsed 2
Static drain-source on-state resistance RDS(on) 35 46 mΩ VGS = -6V, ID = -25A, pulsed 2
Gate resistance RG 7.2 Ω f = 1MHz, open drain 2
Forward transfer admittance /Yfs/ 20 S VDS = -5V, ID = -25A, pulsed 2
Input capacitance Ciss 4620 pF VGS = 0V, VDS = -50V, f = 1MHz 3
Output capacitance Coss 200 pF VGS = 0V, VDS = -50V, f = 1MHz 3
Reverse transfer capacitance Crss 160 pF VGS = 0V, VDS = -50V, f = 1MHz 3
Turn-on delay time td(on) 28 ns VDD ≈ -50V, VGS = -10V, ID = -25A, RL ≈ 2Ω, RG = 10Ω 3
Rise time tr 60 ns VDD ≈ -50V, VGS = -10V, ID = -25A, RL ≈ 2Ω, RG = 10Ω 3
Turn-off delay time td(off) 235 ns VDD ≈ -50V, VGS = -10V, ID = -25A, RL ≈ 2Ω, RG = 10Ω 3
Fall time tf 145 ns VDD ≈ -50V, VGS = -10V, ID = -25A, RL ≈ 2Ω, RG = 10Ω 3
Total gate charge Qg 110 nC VDD ≈ -50V, ID = -50A, VGS = -10V 3
Total gate charge Qg 68 nC VDD ≈ -50V, ID = -50A, VGS = -6V 3
Gate-Source charge Qgs 21 nC VDD ≈ -50V, ID = -50A 3
Gate-Drain charge Qgd 34 nC VDD ≈ -50V, ID = -50A 3
Body diode continuous forward current IS -50 A Ta = 25℃ 3
Body diode pulse forward current ISP -100 A Pw ≤ 10μs, Duty cycle ≤ 1% 3
Body diode forward voltage VSD -1.2 V VGS = 0V, IS = -50A 3
Reverse recovery time trr 45 ns IS = -50A, VGS=0V, di/dt = 100A/μs 3
Reverse recovery charge Qrr 140 nC IS = -50A, VGS=0V, di/dt = 100A/μs 3

CAD (KiCad official)

  • Symbol: RD3P05BATTL1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: rd3p05battl1-etched.step / rd3p05battl1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rd3p05battl1.step / rd3p05battl1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (14 pp, sha256 f0e8abe44ee56d80, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF