component
RD3P01BATTL1
Public Made by Adomby adom
ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownRD3P01BATTL1
ROHM Semicon · MOSFETs · TO-252
RD3P01BATTL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage limited to ±20 V with threshold VGS(th) of -2.0 to -4.0 V. |
| 2 | Drain | passive | Drain terminal (tab) with drain-source voltage rating of -100 V and continuous drain current of ±10 A. |
| 3 | Source | passive | Source terminal connected to the body diode anode side, with continuous body-diode forward current of -10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source breakdown voltage | V(BR)DSS | -100 | V | VGS = 0V, ID = -1mA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -100V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | -2 | -4 | V | VDS = VGS, ID = -1mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 181 | 240 | mΩ | VGS = -10V, ID = -5A | 2 | |
| Static drain - source on - state resistance | RDS(on) | 210 | 270 | mΩ | VGS = -6V, ID = -5A | 2 | |
| Forward Transfer Admittance | /Yfs/ | 4.4 | S | VDS = -5V, ID = -5A | 2 | ||
| Continuous forward current | IS | -10 | A | Ta = 25℃ | 3 | ||
| Pulse forward current | ISP | -20 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 3 | ||
| Forward voltage | VSD | -1.2 | V | VGS = 0V, IS = -10A | 3 | ||
| Drain - Source voltage | VDSS | -100 | V | 1 | |||
| Continuous drain current | ID | -10 | 10 | A | VGS = -10V | 1 | |
| Pulsed drain current | IDP | -20 | 20 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 1 | |
| Gate - Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Avalanche current, single pulse | IAS | -5 | A | L ⋍ 0.1mH, VDD = -50V, RG = 25Ω, Starting Tj = 25℃ | 1 | ||
| Avalanche energy, single pulse | EAS | 1.7 | mJ | L ⋍ 0.1mH, VDD = -50V, RG = 25Ω, Starting Tj = 25℃ | 1 | ||
| Power dissipation | PD | 25 | W | Tc=25℃, Limited only by maximum temperature allowed | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - case | RthJC | 4.9 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
RD3P01BATTL1 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rd3p01battl1-etched.step/rd3p01battl1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rd3p01battl1.step/rd3p01battl1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (14 pp, sha256
d10d6f8528c2f601, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).