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Ray Publish 0.1.0 7e076bb 15d ago

RD3L150SNTL1

ROHM Semicon · MOSFETs · TO-252

RD3L150SNTL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal with ESD protection diode to source; VGSS maximum ±20 V and threshold VGS(th) 1.0 to 3.0 V at VDS = 10 V, ID = 1 mA.
2 Drain passive Drain terminal (also the tab) with VDSS of 60 V and continuous drain current ID of ±15 A, pulsed ±30 A.
3 Source passive Source terminal with body diode to drain, rated IS of 15 A continuous and 30 A pulsed.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS 60 V 1
Continuous drain current ID -15 15 A Limited only by maximum temperature allowed (*1) 1
Pulsed drain current IDP -30 30 A Pw ≦ 10μs, duty cycle ≦ 1% (*2) 1
Gate - Source voltage VGSS -20 20 V 1
Power dissipation PD 20 W Tc = 25℃ (*3) 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - case RthJC 6.25 ℃/W Tc = 25℃ (*3) 2
Drain - Source breakdown voltage V(BR)DSS 60 V VGS = 0V, ID = 1mA 2
Zero gate voltage drain current IDSS 1 μA VDS = 60V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 1 3 V VDS = 10V, ID = 1mA 2
Static drain - source on - state resistance RDS(on) 28 40 mΩ VGS = 10V, ID = 15A, pulsed (*4) 2
Static drain - source on - state resistance RDS(on) 33 47 mΩ VGS = 4.5V, ID = 15A, pulsed (*4) 2
Static drain - source on - state resistance RDS(on) 36 51 mΩ VGS = 4.0V, ID = 15A, pulsed (*4) 2
Forward Transfer Admittance /Yfs/ 7 S VDS = 10V, ID = 15A, pulsed (*4) 2
Breakdown voltage temperature coefficient ΔV(BR)DSS/ΔTj 63.7 mV/℃ ID = 1mA, referenced to 25℃ 2
Gate threshold voltage temperature coefficient ΔVGS(th)/ΔTj -4.4 mV/℃ ID = 1mA, referenced to 25℃ 2
Gate resistance RG 4.2 Ω f = 1MHz, open drain 2
Input capacitance Ciss 930 pF VGS = 0V 3
Output capacitance Coss 200 pF VDS = 10V 3
Reverse transfer capacitance Crss 80 pF f = 1MHz 3
Turn - on delay time td(on) 10 ns VDD ⋍ 30V, VGS = 10V 3
Rise time tr 30 ns ID = 7.5A 3
Turn - off delay time td(off) 45 ns RL ⋍ 4.0Ω 3
Fall time tf 15 ns RG = 10Ω 3
Total gate charge Qg 18 nC VDD ⋍ 30V, ID = 15A, VGS = 10V 3
Gate - Source charge Qgs 3.2 nC 3
Gate - Drain charge Qgd 3.8 nC 3
Continuous forward current IS 15 A Ta = 25℃ (*1) 3
Pulse forward current ISP 30 A 3
Forward voltage VSD 1.2 V VGS = 0V, IS = 15A, pulsed (*4) 3

CAD (KiCad official)

  • Symbol: RD3L150SNTL1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: rd3l150sntl1-etched.step / rd3l150sntl1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rd3l150sntl1.step / rd3l150sntl1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (15 pp, sha256 1ac09f89d8dd7a71, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF