component
RCJ7008
Public Made by Adomby adom
RealChip(正芯半导体) MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| rcj7008-etched.glb | 13d ago |
| rcj7008-etched.step | 13d ago |
| rcj7008-hero.glb | 13d ago |
| rcj7008-hero.overlay.json | 13d ago |
| rcj7008.glb | 13d ago |
| rcj7008.kicad_mod | 13d ago |
| rcj7008.kicad_sym | 13d ago |
| rcj7008.lbr | 13d ago |
| rcj7008.step | 13d ago |
| README.md | 13d ago |
RCJ7008
RealChip(正芯半导体) · MOSFETs · SOP-8
RCJ7008 from RealChip(正芯半导体), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; VDS = -40V, ID = -13 A continuous. |
| 2 | S | passive | Source of the P-channel MOSFET; VDS = -40V, ID = -13 A continuous. |
| 3 | S | passive | Source of the P-channel MOSFET; VDS = -40V, ID = -13 A continuous. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS maximum ±20V, threshold -1.3 to -2.5V. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS = -40V, pulsed drain current IDM -50 A. |
| 6 | D | passive | Drain of the P-channel MOSFET; VDS = -40V, pulsed drain current IDM -50 A. |
| 7 | D | passive | Drain of the P-channel MOSFET; VDS = -40V, pulsed drain current IDM -50 A. |
| 8 | D | passive | Drain of the P-channel MOSFET; VDS = -40V, pulsed drain current IDM -50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip(正芯半导体) |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -13 | A | 1 | |||
| Pulsed Drain Current | IDM | -50 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TA = 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | °C/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 2) | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | VDSS | -40 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-40V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.3 | -2 | -2.5 | V | VDS=VGS, ID=-250µA | 2 |
| Static Drain-Source On-Resistance | RDS(On) | 12 | 15 | mΩ | VGS=-10V, ID=-12A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | ISD=-12 A, VGS=0V | 2 | ||
| Diode Forward Current | IS | -13 | A | 2 |
CAD (KiCad official)
- Symbol:
RCJ7008 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
rcj7008-etched.step/rcj7008-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rcj7008.step/rcj7008.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RealChip(正芯半导体) datasheet (4 pp, sha256
540a63c317ee4368, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).