# RC7N65

**RealChip** · MOSFETs · TO-220

RC7N65 from RealChip, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, controls the channel with a maximum gate-source voltage of ±30 V and a threshold of 2 V to 4 V. |
| 2 | D | passive | Drain, rated for 650 V drain-source voltage and 7 A continuous current at TC=25℃ (28 A pulsed), and connected to the metal tab. |
| 3 | S | passive | Source, the current return of the N-channel MOSFET, with a 7 A maximum continuous body-diode forward current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | RealChip |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 650 | V |  | 1 |
| Drain Current -continuous | ID |  |  | 7 | A | TC=25℃ | 1 |
| Drain Current -continuous | ID |  |  | 4.1 | A | TC=100℃ | 1 |
| Drain Current, pulse (note 1) | IDM |  |  | 28 | A |  | 1 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Single Pulsed Avalanche Energy (note 2) | EAS |  |  | 80 | mJ |  | 1 |
| Avalanche Current (note 1) | IAS |  |  | 4 | A |  | 1 |
| Repetitive Avalanche Energy (note 1) | EAR |  |  | 8 | mJ |  | 1 |
| Peak Diode Recovery dv/dt (note 3) | dv/dt |  |  | 5 | V/ns |  | 1 |
| Power Dissipation | PD |  |  | 97 | W | TC=25℃ | 1 |
| Operating and Storage Temperature Range | TJ，TSTG | -55 |  | 150 | ℃ |  | 1 |
| Maximum Lead Temperature for Soldering Purposes | TL |  |  | 300 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | ID=250μA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=650V,VGS=0V, TC=25℃ | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 100 | μA | VDS=520V, TC=125℃ | 2 |
| Gate-body leakage current | IGSS（F/R） | -100 |  | 100 | nA | VDS=0V, VGS =±30V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS , ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 1.1 | 1.35 | Ω | VGS =10V , ID=3.5A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 7 | A |  | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 28 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.4 | V | VGS=0V, IS=7A | 2 |
| Thermal Resistance, Junction to Case | Rth(j-c) |  | 1.29 |  | ℃/W |  | 3 |
| Thermal Resistance, Junction to Ambient | Rth(j-A) |  | 60 |  | ℃/W |  | 3 |

## CAD (KiCad official)

- Symbol: `RC7N65`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `rc7n65-etched.step` / `rc7n65-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rc7n65.step` / `rc7n65.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [RealChip datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590269426072522752) (8 pp, sha256 `8643d68f4bb19ed5`, retrieved 2026-10-19, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rc7n65-datasheet.pdf)