component
RC4606
Public Made by Adomby adom
RealChip MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 20d ago |
| viewers | 20d ago |
| package.json | 20d ago |
| page.json | 20d ago |
| rc4606-etched.glb | 20d ago |
| rc4606-etched.step | 20d ago |
| rc4606-hero.glb | 20d ago |
| rc4606-hero.overlay.json | 20d ago |
| rc4606.glb | 20d ago |
| rc4606.kicad_mod | 20d ago |
| rc4606.kicad_sym | 20d ago |
| rc4606.lbr | 20d ago |
| rc4606.step | 20d ago |
| README.md | 20d ago |
RC4606
RealChip · MOSFETs · SOP-8
RC4606 from RealChip, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of the N-channel MOSFET (channel 2); N-channel is rated VDS 30V and ID 5.8A. |
| 2 | G2 | input | Gate of the N-channel MOSFET (channel 2); VGS absolute maximum ±20V. |
| 3 | S1 | passive | Source of the P-channel MOSFET (channel 1); P-channel is rated VDS -30V. |
| 4 | G1 | input | Gate of the P-channel MOSFET (channel 1); VGS absolute maximum ±20V. |
| 5 | D1 | passive | Drain of the P-channel MOSFET (channel 1), tied with pin 6; VDS -30V maximum. |
| 6 | D1 | passive | Drain of the P-channel MOSFET (channel 1), tied with pin 5; VDS -30V maximum. |
| 7 | D2 | passive | Drain of the N-channel MOSFET (channel 2), tied with pin 8; VDS 30V maximum. |
| 8 | D2 | passive | Drain of the N-channel MOSFET (channel 2), tied with pin 7; VDS 30V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 30 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -30 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 5.8 | A | TA=25℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -5.5 | A | TA=25℃ | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 5.2 | A | TA=70℃ | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -5 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 20 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 | ||
| Pulsed Drain Current (P-Channel) | IDM | -20 | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 | ||
| Maximum Power Dissipation (N-Channel) | PD | 2 | W | TA=25℃ | 1 | ||
| Maximum Power Dissipation (P-Channel) | PD | 2 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient (N-Channel) | RθJA | 62.5 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Thermal Resistance, Junction-to-Ambient (P-Channel) | RθJA | 62.5 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 30 | 33 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current (N-Channel) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | 1.6 | 3 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(ON) | 25 | 30 | mΩ | VGS=10V, ID=5.8A | 2 | |
| Forward Transconductance (N-Channel) | gFS | 15 | S | VDS=5V,ID=6A | 2 | ||
| Diode Forward Voltage (N-Channel) | VSD | 0.8 | 1.2 | V | VGS=0V,IS=6A | 2 | |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -30 | -33 | V | VGS=0V ID=-250μA | 3 | |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | μA | VDS=-30V,VGS=0V | 3 | ||
| Gate-Body Leakage Current (P-Channel) | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 3 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1.5 | -1.9 | -2.5 | V | VDS=VGS,ID=-250μA | 3 |
| Drain-Source On-State Resistance (P-Channel) | RDS(ON) | 38 | 43 | mΩ | VGS=-10V, ID=-5.2A | 3 | |
| Forward Transconductance (P-Channel) | gFS | 10 | S | VDS=-5V,ID=-5.2A | 3 | ||
| Diode Forward Voltage (P-Channel) | VSD | -1.2 | V | VGS=0V,IS=-6.5A | 3 |
CAD (KiCad official)
- Symbol:
RC4606 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
rc4606-etched.step/rc4606-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rc4606.step/rc4606.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RealChip datasheet (9 pp, sha256
6611916427efec26, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).