component
RC3P06
Public Made by Adomby adom
RealChip(正芯半导体) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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{
"schema_version": 1,
"type": "component",
"slug": "rc3p06",
"title": "RC3P06",
"brief": "RealChip(正芯半导体) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"rc3p06",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "RC3P06",
"manufacturer": "RealChip(正芯半导体)",
"package": "SOT-23",
"pin_count": 3,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603166794291437568",
"parts": {
"symbol": "rc3p06.kicad_sym",
"footprint": "rc3p06.kicad_mod",
"model_3d": "rc3p06-hero.glb",
"model_3d_plain": "rc3p06-etched.glb",
"model_3d_step": "rc3p06-etched.step",
"model_3d_step_plain": "rc3p06.step",
"lbr": "rc3p06.lbr"
},
"distributor_links": {
"lcsc": "C5443951"
},
"distributor_check": {
"checked_at": "2026-10-17T15:42:59Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "quota"
},
"mouser": {
"pn": null,
"status": "quota"
}
},
"pins": [
{
"number": "1",
"name": "GATE",
"type": "input",
"description": "Gate terminal of the P-channel MOSFET; maximum gate-source voltage is ±20 V with threshold of -1 V min to -3 V max at ID=-250µA."
},
{
"number": "2",
"name": "SOURCE",
"type": "passive",
"description": "Source terminal of the P-channel MOSFET; continuous body-diode current is -1.25 A and pulsed is -8 A."
},
{
"number": "3",
"name": "DRAIN",
"type": "passive",
"description": "Drain terminal of the P-channel MOSFET; drain-source voltage rated -60 V and continuous drain current -3.0 A."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-sonnet-5-5",
"primary_mode": "text+vision",
"consensus_model": "claude-opus-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: Datasheet lists two different pulsed drain current values (-10 A and -8 A) under the IDM symbol; not",
"vision extraction: provenance cannot be text-verified; needs consensus"
],
"pages_sent": 6,
"cost_usd": 0.0606,
"at": "2026-10-17T15:40:43"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603166794291437568",
"pages": 6,
"sha256": "89a032b1efc18760",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "rc3p06.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
2.5,
3,
1.2
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "dd5d1711204e1d8d26cd11490923bd84340820baa69538c385a4300ec2539bc0",
"checked": "2026-10-17",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "rc3p06-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
2.5,
3,
1.2
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "a497faa384e9f6251e8fd22146a57333a82008fed876fd54341f0376b0f184eb",
"checked": "2026-10-17",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "RealChip(正芯半导体)",
"Package": "SOT-23",
"Category": "Transistors/Thyristors",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "89a032b1efc187601dd5c3c132f9e3aacbd291159a01f1f402135f9223342663",
"rows": [
{
"name": "Drain-Source Voltage",
"symbol": "VDS",
"kind": "absolute_maximum",
"unit": "V",
"min": -60,
"typ": null,
"max": null,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-Source Voltage",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Continuous Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": -3,
"typ": null,
"max": null,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain Current-Pulsed (note 1)",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": -10,
"typ": null,
"max": null,
"conditions": "note 1",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Pulsed Drain Current",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": -8,
"typ": null,
"max": null,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Avalanche Current",
"symbol": "IAS",
"kind": "absolute_maximum",
"unit": "A",
"min": -5,
"typ": null,
"max": null,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Power Dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 1.25,
"conditions": "Surface Mounted on FR4 Board, t < 5 sec",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Thermal Resistance from Junction to Ambient",
"symbol": "RθJA",
"kind": "thermal",
"unit": "℃/W",
"min": null,
"typ": null,
"max": 120,
"conditions": "Surface Mounted on FR4 Board, t < 5 sec",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction and Storage Temperature Range",
"symbol": "TJ,TSTG",
"kind": "absolute_maximum",
"unit": "℃",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain-source breakdown voltage",
"symbol": "V(BR)DSS",
"kind": "electrical",
"unit": "V",
"min": -60,
"typ": null,
"max": null,
"conditions": "VGS = 0V, ID =-250µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate threshold voltage",
"symbol": "VGS(th)",
"kind": "electrical",
"unit": "V",
"min": -1,
"typ": -1.9,
"max": -3,
"conditions": "VDS =VGS, ID =-250µA",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate-source leakage current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": -100,
"typ": null,
"max": 100,
"conditions": "VDS =0V, VGS =±20 V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero gate voltage drain current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": -1,
"typ": null,
"max": null,
"conditions": "VDS =-60V, VGS = 0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Zero gate voltage drain current (TJ=125°C)",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": -50,
"typ": null,
"max": null,
"conditions": "VDS =-48V, VGS = 0V, TJ=125°C",
"source_page": 2,
"source": "datasheet"
},
{
"name": "On-state Drain Current",
"symbol": "ID(ON)",
"kind": "electrical",
"unit": "A",
"min": -6,
"typ": null,
"max": null,
"conditions": "VGS =-10V, VDS ≥-4.5V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Drain-source on-resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 140,
"max": 165,
"conditions": "VGS =-10V, ID = -2A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Total Gate Charge",
"symbol": "Qg",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 5.4,
"max": 12,
"conditions": "VDS =-30V, VGS =-10V, ID =-1.25 A",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-on Delay time",
"symbol": "td(on)",
"kind": "electrical",
"unit": "nS",
"min": null,
"typ": 10.5,
"max": 20,
"conditions": "VDD=-30V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Rise time",
"symbol": "tr",
"kind": "electrical",
"unit": "nS",
"min": null,
"typ": 11.5,
"max": 20,
"conditions": "VDD=-30V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Turn-off Delay time",
"symbol": "td(off)",
"kind": "electrical",
"unit": "nS",
"min": null,
"typ": 15.5,
"max": 30,
"conditions": "VDD=-30V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Fall time",
"symbol": "tr",
"kind": "electrical",
"unit": "nS",
"min": null,
"typ": 7.5,
"max": 15,
"conditions": "VDD=-30V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Continuous Current",
"symbol": "IS",
"kind": "electrical",
"unit": "A",
"min": -1.25,
"typ": null,
"max": null,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Pulsed Current",
"symbol": "ISM",
"kind": "electrical",
"unit": "A",
"min": -8,
"typ": null,
"max": null,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Diode forward voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": -0.82,
"max": -1.25,
"conditions": "Is=-1.25A, VGS=0V",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Source-Drain Reverse Recovery Time",
"symbol": "trr",
"kind": "electrical",
"unit": "ns",
"min": null,
"typ": 30,
"max": 55,
"conditions": "IF=-1.25A Di/Dt=100A/µs",
"source_page": 2,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"rc3p06"
],
"discovery_pitch": "RC3P06 (RealChip(正芯半导体)) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"rc3p06.kicad_sym",
"rc3p06.kicad_mod",
"rc3p06.glb",
"rc3p06.step",
"rc3p06.lbr",
"docs/hero.png",
"docs/rc3p06-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"rc3p06-hero.glb",
"rc3p06-hero.overlay.json",
"rc3p06-etched.glb"
],
"visibility": {
"public": true
}
}