component
RC3P06
Public Made by Adomby adom
RealChip(正芯半导体) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RC3P06
RealChip(正芯半导体) · MOSFETs · SOT-23
RC3P06 from RealChip(正芯半导体), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET; maximum gate-source voltage is ±20 V with threshold of -1 V min to -3 V max at ID=-250µA. |
| 2 | SOURCE | passive | Source terminal of the P-channel MOSFET; continuous body-diode current is -1.25 A and pulsed is -8 A. |
| 3 | DRAIN | passive | Drain terminal of the P-channel MOSFET; drain-source voltage rated -60 V and continuous drain current -3.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip(正芯半导体) |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -3 | A | 1 | |||
| Drain Current-Pulsed (note 1) | IDM | -10 | A | note 1 | 1 | ||
| Pulsed Drain Current | IDM | -8 | A | 1 | |||
| Avalanche Current | IAS | -5 | A | 1 | |||
| Power Dissipation | PD | 1.25 | W | Surface Mounted on FR4 Board, t < 5 sec | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 120 | ℃/W | Surface Mounted on FR4 Board, t < 5 sec | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | -60 | V | VGS = 0V, ID =-250µA | 2 | ||
| Gate threshold voltage | VGS(th) | -1 | -1.9 | -3 | V | VDS =VGS, ID =-250µA | 2 |
| Gate-source leakage current | IGSS | -100 | 100 | nA | VDS =0V, VGS =±20 V | 2 | |
| Zero gate voltage drain current | IDSS | -1 | µA | VDS =-60V, VGS = 0V | 2 | ||
| Zero gate voltage drain current (TJ=125°C) | IDSS | -50 | µA | VDS =-48V, VGS = 0V, TJ=125°C | 2 | ||
| On-state Drain Current | ID(ON) | -6 | A | VGS =-10V, VDS ≥-4.5V | 2 | ||
| Drain-source on-resistance | RDS(on) | 140 | 165 | mΩ | VGS =-10V, ID = -2A | 2 | |
| Total Gate Charge | Qg | 5.4 | 12 | nC | VDS =-30V, VGS =-10V, ID =-1.25 A | 2 | |
| Turn-on Delay time | td(on) | 10.5 | 20 | nS | VDD=-30V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω | 2 | |
| Rise time | tr | 11.5 | 20 | nS | VDD=-30V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω | 2 | |
| Turn-off Delay time | td(off) | 15.5 | 30 | nS | VDD=-30V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω | 2 | |
| Fall time | tr | 7.5 | 15 | nS | VDD=-30V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω | 2 | |
| Continuous Current | IS | -1.25 | A | 2 | |||
| Pulsed Current | ISM | -8 | A | 2 | |||
| Diode forward voltage | VSD | -0.82 | -1.25 | V | Is=-1.25A, VGS=0V | 2 | |
| Source-Drain Reverse Recovery Time | trr | 30 | 55 | ns | IF=-1.25A Di/Dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
RC3P06 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
rc3p06-etched.step/rc3p06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rc3p06.step/rc3p06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RealChip(正芯半导体) datasheet (6 pp, sha256
89a032b1efc18760, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RC3P06
**RealChip(正芯半导体)** · MOSFETs · SOT-23
RC3P06 from RealChip(正芯半导体), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the P-channel MOSFET; maximum gate-source voltage is ±20 V with threshold of -1 V min to -3 V max at ID=-250µA. |
| 2 | SOURCE | passive | Source terminal of the P-channel MOSFET; continuous body-diode current is -1.25 A and pulsed is -8 A. |
| 3 | DRAIN | passive | Drain terminal of the P-channel MOSFET; drain-source voltage rated -60 V and continuous drain current -3.0 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip(正芯半导体) |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -3 | | | A | | 1 |
| Drain Current-Pulsed (note 1) | IDM | -10 | | | A | note 1 | 1 |
| Pulsed Drain Current | IDM | -8 | | | A | | 1 |
| Avalanche Current | IAS | -5 | | | A | | 1 |
| Power Dissipation | PD | | | 1.25 | W | Surface Mounted on FR4 Board, t < 5 sec | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 120 | ℃/W | Surface Mounted on FR4 Board, t < 5 sec | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Drain-source breakdown voltage | V(BR)DSS | -60 | | | V | VGS = 0V, ID =-250µA | 2 |
| Gate threshold voltage | VGS(th) | -1 | -1.9 | -3 | V | VDS =VGS, ID =-250µA | 2 |
| Gate-source leakage current | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±20 V | 2 |
| Zero gate voltage drain current | IDSS | -1 | | | µA | VDS =-60V, VGS = 0V | 2 |
| Zero gate voltage drain current (TJ=125°C) | IDSS | -50 | | | µA | VDS =-48V, VGS = 0V, TJ=125°C | 2 |
| On-state Drain Current | ID(ON) | -6 | | | A | VGS =-10V, VDS ≥-4.5V | 2 |
| Drain-source on-resistance | RDS(on) | | 140 | 165 | mΩ | VGS =-10V, ID = -2A | 2 |
| Total Gate Charge | Qg | | 5.4 | 12 | nC | VDS =-30V, VGS =-10V, ID =-1.25 A | 2 |
| Turn-on Delay time | td(on) | | 10.5 | 20 | nS | VDD=-30V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω | 2 |
| Rise time | tr | | 11.5 | 20 | nS | VDD=-30V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω | 2 |
| Turn-off Delay time | td(off) | | 15.5 | 30 | nS | VDD=-30V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω | 2 |
| Fall time | tr | | 7.5 | 15 | nS | VDD=-30V, RL=6Ω, ID=-1A, VGEN=-4.5V, RG=6Ω | 2 |
| Continuous Current | IS | -1.25 | | | A | | 2 |
| Pulsed Current | ISM | -8 | | | A | | 2 |
| Diode forward voltage | VSD | | -0.82 | -1.25 | V | Is=-1.25A, VGS=0V | 2 |
| Source-Drain Reverse Recovery Time | trr | | 30 | 55 | ns | IF=-1.25A Di/Dt=100A/µs | 2 |
## CAD (KiCad official)
- Symbol: `RC3P06`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `rc3p06-etched.step` / `rc3p06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rc3p06.step` / `rc3p06.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [RealChip(正芯半导体) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603166794291437568) (6 pp, sha256 `89a032b1efc18760`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rc3p06-datasheet.pdf)