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Ray rc3415p: specified limits as data (metadata.characteristics, 37 rows from the datasheet) 8252c4e 16d ago

RC3415P

RealChip · MOSFETs · SOT-23

RC3415P from RealChip, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel MOSFET, rated for a gate-source voltage VGS of ±10 V.
2 Source passive Source terminal of the P-channel MOSFET, the reference for VGS and the body diode, with the device rated for VDS = -20 V.
3 Drain passive Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -20 V and a continuous drain current of -4 A at Ta = 25 ℃.

Key specifications

Parameter Value
Manufacturer RealChip
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V Ta = 25℃ 1
Gate-Source Voltage VGS -10 10 V Ta = 25℃ 1
Continuous Drain Current ID -4 A Ta = 25℃ 1
Continuous Drain Current ID -3.5 A Ta = 70℃ 1
Pulsed Drain Current IDM -30 A 1
Power Dissipation PD 1.5 W Ta = 25℃ (Note.1) 1
Thermal Resistance Junction-to-Ambient RthJA 80 ℃/W t ≤ 10s 1
Thermal Resistance Junction-to-Ambient RthJA 100 ℃/W Steady-State 1
Thermal Resistance Junction-to-Lead RthJL 52 ℃/W 1
Junction Temperature TJ 150 ℃ 1
Junction Storage Temperature Range Tstg -55 150 ℃ 1
Drain-Source Breakdown Voltage VDSS -20 V ID=-250μA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-20V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -5 μA VDS=-20V, VGS=0V, TJ=55℃ 2
Gate-Body leakage current IGSS -10 10 uA VDS=0V, VGS=±10V 2
Gate Threshold Voltage VGS(th) -0.5 -1 V VDS=VGS ID=-250μA 2
Static Drain-Source On-Resistance RDS(On) 40 mΩ VGS=-4.5V, ID=-4A 2
Static Drain-Source On-Resistance RDS(On) 62 mΩ VGS=-4.5V, ID=-4A TJ=125℃ 2
Static Drain-Source On-Resistance RDS(On) 60 mΩ VGS=-2.5V, ID=-4A 2
Static Drain-Source On-Resistance RDS(On) 100 mΩ VGS=-1.8V, ID=-2A 2
On state drain current ID(ON) -30 A VGS=-4.5V, VDS=-5V 2
Maximum Body-Diode Continuous Current IS -2.2 A 2
Forward Transconductance gFS 20 S VDS=-5V, ID=-4A 2
Input Capacitance Ciss 1450 pF VGS=0V, VDS=-10V, f=1MHz 2
Output Capacitance Coss 205 pF 2
Reverse Transfer Capacitance Crss 160 pF 2
Gate resistance Rg 6.5 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg 17.2 nC VGS=-4.5V, VDS=-10V, ID=-4A 2
Gate Source Charge Qgs 1.3 nC 2
Gate Drain Charge Qgd 4.5 nC 2
Turn-On Delay Time td(on) 9.5 ns VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω 2
Turn-On Rise Time tr 17 ns 2
Turn-Off Delay Time td(off) 94 ns 2
Turn-Off Fall Time tf 35 ns 2
Body Diode Reverse Recovery Time trr 31 ns IF=-4A, dI/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 13.8 nC 2
Diode Forward Voltage VSD -0.78 -1 V IS=-1A,VGS=0V 2

CAD (KiCad official)

  • Symbol: RC3415P
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: rc3415p-etched.step / rc3415p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rc3415p.step / rc3415p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: RealChip datasheet (4 pp, sha256 3ff68d0c4d7db02f, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF