component
RC3415P
Public Made by Adomby adom
RealChip MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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rc3415p: specified limits as data (metadata.characteristics, 37 rows from the datasheet)
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RC3415P
RealChip · MOSFETs · SOT-23
RC3415P from RealChip, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET, rated for a gate-source voltage VGS of ±10 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, the reference for VGS and the body diode, with the device rated for VDS = -20 V. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -20 V and a continuous drain current of -4 A at Ta = 25 ℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | Ta = 25℃ | 1 | ||
| Gate-Source Voltage | VGS | -10 | 10 | V | Ta = 25℃ | 1 | |
| Continuous Drain Current | ID | -4 | A | Ta = 25℃ | 1 | ||
| Continuous Drain Current | ID | -3.5 | A | Ta = 70℃ | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | 1 | |||
| Power Dissipation | PD | 1.5 | W | Ta = 25℃ (Note.1) | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 80 | ℃/W | t ≤ 10s | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 100 | ℃/W | Steady-State | 1 | ||
| Thermal Resistance Junction-to-Lead | RthJL | 52 | ℃/W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Junction Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | VDSS | -20 | V | ID=-250μA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | μA | VDS=-20V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Body leakage current | IGSS | -10 | 10 | uA | VDS=0V, VGS=±10V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.5 | -1 | V | VDS=VGS ID=-250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(On) | 40 | mΩ | VGS=-4.5V, ID=-4A | 2 | ||
| Static Drain-Source On-Resistance | RDS(On) | 62 | mΩ | VGS=-4.5V, ID=-4A TJ=125℃ | 2 | ||
| Static Drain-Source On-Resistance | RDS(On) | 60 | mΩ | VGS=-2.5V, ID=-4A | 2 | ||
| Static Drain-Source On-Resistance | RDS(On) | 100 | mΩ | VGS=-1.8V, ID=-2A | 2 | ||
| On state drain current | ID(ON) | -30 | A | VGS=-4.5V, VDS=-5V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | -2.2 | A | 2 | |||
| Forward Transconductance | gFS | 20 | S | VDS=-5V, ID=-4A | 2 | ||
| Input Capacitance | Ciss | 1450 | pF | VGS=0V, VDS=-10V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 205 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 160 | pF | 2 | |||
| Gate resistance | Rg | 6.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 17.2 | nC | VGS=-4.5V, VDS=-10V, ID=-4A | 2 | ||
| Gate Source Charge | Qgs | 1.3 | nC | 2 | |||
| Gate Drain Charge | Qgd | 4.5 | nC | 2 | |||
| Turn-On Delay Time | td(on) | 9.5 | ns | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 17 | ns | 2 | |||
| Turn-Off Delay Time | td(off) | 94 | ns | 2 | |||
| Turn-Off Fall Time | tf | 35 | ns | 2 | |||
| Body Diode Reverse Recovery Time | trr | 31 | ns | IF=-4A, dI/dt=100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 13.8 | nC | 2 | |||
| Diode Forward Voltage | VSD | -0.78 | -1 | V | IS=-1A,VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
RC3415P - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
rc3415p-etched.step/rc3415p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rc3415p.step/rc3415p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RealChip datasheet (4 pp, sha256
3ff68d0c4d7db02f, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RC3415P
**RealChip** · MOSFETs · SOT-23
RC3415P from RealChip, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET, rated for a gate-source voltage VGS of ±10 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, the reference for VGS and the body diode, with the device rated for VDS = -20 V. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -20 V and a continuous drain current of -4 A at Ta = 25 ℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -20 | V | Ta = 25℃ | 1 |
| Gate-Source Voltage | VGS | -10 | | 10 | V | Ta = 25℃ | 1 |
| Continuous Drain Current | ID | | | -4 | A | Ta = 25℃ | 1 |
| Continuous Drain Current | ID | | | -3.5 | A | Ta = 70℃ | 1 |
| Pulsed Drain Current | IDM | | | -30 | A | | 1 |
| Power Dissipation | PD | | | 1.5 | W | Ta = 25℃ (Note.1) | 1 |
| Thermal Resistance Junction-to-Ambient | RthJA | | | 80 | ℃/W | t ≤ 10s | 1 |
| Thermal Resistance Junction-to-Ambient | RthJA | | | 100 | ℃/W | Steady-State | 1 |
| Thermal Resistance Junction-to-Lead | RthJL | | | 52 | ℃/W | | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Junction Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | VDSS | -20 | | | V | ID=-250μA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -5 | μA | VDS=-20V, VGS=0V, TJ=55℃ | 2 |
| Gate-Body leakage current | IGSS | -10 | | 10 | uA | VDS=0V, VGS=±10V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.5 | | -1 | V | VDS=VGS ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(On) | | | 40 | mΩ | VGS=-4.5V, ID=-4A | 2 |
| Static Drain-Source On-Resistance | RDS(On) | | | 62 | mΩ | VGS=-4.5V, ID=-4A TJ=125℃ | 2 |
| Static Drain-Source On-Resistance | RDS(On) | | | 60 | mΩ | VGS=-2.5V, ID=-4A | 2 |
| Static Drain-Source On-Resistance | RDS(On) | | | 100 | mΩ | VGS=-1.8V, ID=-2A | 2 |
| On state drain current | ID(ON) | -30 | | | A | VGS=-4.5V, VDS=-5V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | -2.2 | A | | 2 |
| Forward Transconductance | gFS | | 20 | | S | VDS=-5V, ID=-4A | 2 |
| Input Capacitance | Ciss | | 1450 | | pF | VGS=0V, VDS=-10V, f=1MHz | 2 |
| Output Capacitance | Coss | | 205 | | pF | | 2 |
| Reverse Transfer Capacitance | Crss | | 160 | | pF | | 2 |
| Gate resistance | Rg | | 6.5 | | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | | 17.2 | | nC | VGS=-4.5V, VDS=-10V, ID=-4A | 2 |
| Gate Source Charge | Qgs | | 1.3 | | nC | | 2 |
| Gate Drain Charge | Qgd | | 4.5 | | nC | | 2 |
| Turn-On Delay Time | td(on) | | 9.5 | | ns | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr | | 17 | | ns | | 2 |
| Turn-Off Delay Time | td(off) | | 94 | | ns | | 2 |
| Turn-Off Fall Time | tf | | 35 | | ns | | 2 |
| Body Diode Reverse Recovery Time | trr | | 31 | | ns | IF=-4A, dI/dt=100A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 13.8 | | nC | | 2 |
| Diode Forward Voltage | VSD | | -0.78 | -1 | V | IS=-1A,VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `RC3415P`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `rc3415p-etched.step` / `rc3415p-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rc3415p.step` / `rc3415p.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [RealChip datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589838068573372416) (4 pp, sha256 `3ff68d0c4d7db02f`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rc3415p-datasheet.pdf)