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RC3407

Public Made by Adom

by adom

RealChip MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RC3407

RealChip · MOSFETs · SOT-23-3

RC3407 from RealChip, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel enhancement MOSFET, rated for a gate-source voltage of ±20 V.
2 Source passive Source terminal of the P-channel enhancement MOSFET, the reference for the gate-source voltage rating of ±20 V.
3 Drain passive Drain terminal of the P-channel enhancement MOSFET, rated for a drain-source voltage of -30 V and a continuous drain current of -4.1 A at Ta = 25°C.

Key specifications

Parameter Value
Manufacturer RealChip
Package SOT-23-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -4.1 A Ta = 25℃ 1
Continuous Drain Current ID -3.5 A Ta = 70℃ 1
Pulsed Drain Current IDM -20 A 1
Power Dissipation PD 1.4 W Ta = 25℃ 1
Power Dissipation PD 1 W Ta = 70℃ 1
Thermal Resistance Junction-to-Ambient RthJA 90 ℃/W t ≤10s 1
Thermal Resistance Junction-to-Ambient RthJA 125 ℃/W Steady state 1
Thermal Resistance Junction-to-Lead RthJL 60 ℃/W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Drain-Source Breakdown Voltage VDSS -30 V ID=-250μA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-24V, VGS=0V 2
Zero Gate Voltage Drain Current (TJ=55℃) IDSS -5 μA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) -1 -1.8 -3 V VDS=VGS ID=-250μA 2
Static Drain-Source On-Resistance RDS(on) 40.5 52 mΩ VGS=-10V, ID=-4.1A 2
Static Drain-Source On-Resistance (TJ=125℃) RDS(on) 57 73 mΩ VGS=-10V, ID=-4.A TJ=125℃ 2
Static Drain-Source On-Resistance RDS(on) 64 87 mΩ VGS=-4.5V, ID=-3A 2
On-State Drain Current ID(ON) -10 A VGS=-4.5V, VDS=-5V 2
Forward Transconductance gFS 5.5 8.2 S VDS=-5V, ID=-4A 2
Diode Forward Voltage VSD -0.77 -1 V IS=-1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS -2.2 A 2
Input Capacitance Ciss 700 pF 2
Output Capacitance Coss 120 pF 2
Reverse Transfer Capacitance Crss 75 pF 2
Gate Resistance Rg 10 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg 14.3 nC 2
Gate-Source Charge Qgs 7 nC 2
Gate-Drain Charge Qgd 3.1 nC 2
Turn-On Delay Time td(on) 8.6 ns 2
Turn-On Rise Time tr 5 ns 2
Turn-Off Delay Time td(off) 28.2 ns 2
Turn-Off Fall Time tf 13.5 ns 2
Body Diode Reverse Recovery Time trr 27 ns 2
Body Diode Reverse Recovery Charge Qrr 15 nC 2

CAD (KiCad official)

  • Symbol: RC3407
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: rc3407-etched.step / rc3407-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rc3407.step / rc3407.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: RealChip datasheet (4 pp, sha256 c47b26e688aa66a8, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF