component
RC25P03S
Public Made by Adomby adom
RealChip(正芯半导体) MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRC25P03S
RealChip(正芯半导体) · MOSFETs · SOP-8
RC25P03S from RealChip(正芯半导体), in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3. |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6, 7 and 8; VDS is rated at -30 V. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8; continuous ID is -25 A at TA=25°C. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip(正芯半导体) |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDS | -30 | V | 1 | |||
| Gate-Source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -25 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -8.8 | A | TA=100°C | 1 | ||
| Pulsed Drain Current | IDM | -60 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | 1 | |||
| Total Power Dissipation | PD | 3 | W | TA=25°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance from Junction-to-Ambient | RθJA | 41.6 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS = 0V, ID = -250µA | 2 | ||
| Gate-body Leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Zero Gate Voltage Drain Current (TJ=25°C) | IDSS | -1 | µA | TJ=25°C, VDS = -30V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=100°C) | IDSS | -100 | µA | TJ=100°C, VDS = -30V, VGS = 0V | 2 | ||
| Gate-Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = -250µA | 2 | |
| Drain-Source On-Resistance (VGS = -10V) | RDS(on) | 5.8 | 9.2 | mΩ | VGS = -10V, ID = -12A | 2 | |
| Drain-Source On-Resistance (VGS = -4.5V) | RDS(on) | 8 | 14 | mΩ | VGS = -4.5V, ID = -10A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | IS = -1A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | -14 | A | TA=25°C | 2 |
CAD (KiCad official)
- Symbol:
RC25P03S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
rc25p03s-etched.step/rc25p03s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rc25p03s.step/rc25p03s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RealChip(正芯半导体) datasheet (6 pp, sha256
53323f025b7875b3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).