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RC2305A

Public Made by Adom

by adom

RealChip(正芯半导体) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RC2305A

RealChip(正芯半导体) · MOSFETs · SOT-23

RC2305A from RealChip(正芯半导体), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel MOSFET, rated for a gate-source voltage of ±10 V (VGS ±10 V).
2 Source passive Source terminal of the P-channel MOSFET, with a continuous source (diode conduction) current rating of -1.6 A.
3 Drain passive Drain terminal of the P-channel MOSFET, rated for a drain-source voltage of -20 V and a continuous drain current of -4.2 A at TA=25°C.

Key specifications

Parameter Value
Manufacturer RealChip(正芯半导体)
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -20 V Ta = 25 °C 1
Gate-source voltage VGS -10 10 V Ta = 25 °C 1
Continuous drain current ID -4.2 A TA = 25 °C 1
Continuous drain current ID -2.8 A TA = 70 °C 1
Pulsed drain current IDM -12 A 1
Power dissipation PD 1.25 W TA = 25 °C 1
Power dissipation PD 0.8 W TA = 70 °C 1
Thermal resistance, junction-to-ambient RθJA 130 °C/W 1
Operating junction and storage temperature range Tj,Tstg -55 150 °C 1
Drain-source breakdown voltage VDSS -20 V VGS = 0 V, ID = value garbled in source (μA) 2
Gate threshold voltage VGS(th) -0.4 -1 V VDS = VGS, ID = value garbled in source (μA) 2
Gate-body leakage IGSS -100 100 nA VDS = 0 V, VGS = ±10 V 2
Zero gate voltage drain current IDSS -1 μA VDS = -20 V, VGS = 0 V 2
Zero gate voltage drain current IDSS -10 μA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-state drain current ID(on) -6 A VDS ≤ -5 V, VGS = -4.5 V 2
On-state drain current ID(on) -3 A VDS ≤ -5 V, VGS = -2.5 V 2
Drain-source on-state resistance rDS(on) 0.03 0.045 Ω VGS = -4.5 V, ID = -3.5 A 2
Drain-source on-state resistance rDS(on) 0.05 0.06 Ω VGS = -2.5 V, ID = -3.0 A 2
Total gate charge Qg 10 15 nC VDS = -10 V, VGS = -4.5 V, ID = -3.5 A 2
Turn-on delay time td(on) 13 20 ns VDD = -5 V, ID = -1 A, VGEN = -4.5 V 2
Turn-on rise time tr 25 40 ns VDD = -5 V, ID = -1 A, VGEN = -4.5 V 2
Turn-off delay time td(off) 55 80 ns VDD = -5 V, ID = -1 A, VGEN = -4.5 V 2
Turn-off fall time tf 19 35 ns VDD = -5 V, ID = -1 A, VGEN = -4.5 V 2
Continuous source current (diode conduction) IS -1.6 A 2
Diode forward voltage VSD -1.2 V IS = -1.6 A, VGS = 0 V 2

CAD (KiCad official)

  • Symbol: RC2305A
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: rc2305a-etched.step / rc2305a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rc2305a.step / rc2305a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: RealChip(正芯半导体) datasheet (4 pp, sha256 74bf6a877d36e8ff, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF