component
RC2101
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RealChip MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RC2101
RealChip · MOSFETs · SOT-323
RC2101 from RealChip, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the MOSFET, rated for a gate-source voltage VGS of ±8.0 V. |
| 2 | SOURCE | passive | Source terminal of the MOSFET; the datasheet gives a body diode forward voltage VSD of -0.62 to -1.2 V at IS = -0.3 A with VGS = 0 V. |
| 3 | DRAIN | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDS of -20 V and a continuous drain current ID of -1.4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip |
| Package | SOT-323 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | -1.4 | A | 1 | |||
| Pulsed Drain Current | IDM | -3 | A | tp=10µs | 1 | ||
| Power Dissipation | PD | 0.29 | W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -50 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | VDSS | -20 | V | VGS = 0V, ID =-250µA | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS =0V, VGS =±8V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS =-20V, VGS =0V | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.45 | -0.7 | V | VDS =VGS, ID =-250µA | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 100 | mΩ | VGS =-4.5V, ID =-1.0A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 140 | mΩ | VGS =-2.5V, ID =-0.5A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 210 | mΩ | VGS =-1.8V, ID =-0.3A | 2 | ||
| Forward Diode Voltage | VSD | -0.62 | -1.2 | V | VGS =0V, IS=-0.3A | 2 | |
| Total Gate Charge | Qg | 5.5 | 10 | nC | VDS=-10V, VGS=-4.5V, ID=-3.0A | 2 | |
| Total Gate Charge | Qg | 3.3 | 6 | nC | VDS=-10V, VGS=-2.5V, ID=-3.0A | 2 | |
| Input Capacitance | Ciss | 640 | pF | VDS=-8.0V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 120 | pF | VDS=-8.0V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 82 | pF | VDS=-8.0V, VGS=0V, f=1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 6.2 | ns | VGS=-4.5V, VDD=-4.0V, ID=-1.0A, RG=6.2Ω | 2 | ||
| Rise Time | tr | 15 | ns | VGS=-4.5V, VDD=-4.0V, ID=-1.0A, RG=6.2Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 26 | ns | VGS=-4.5V, VDD=-4.0V, ID=-1.0A, RG=6.2Ω | 2 | ||
| Fall Time | tf | 18 | ns | VGS=-4.5V, VDD=-4.0V, ID=-1.0A, RG=6.2Ω | 2 | ||
| Gate-Source Charge | Qgs | 0.7 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 1.3 | nC | VDS=-10V, VGS=-2.5V, ID=-3.0A | 2 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 431 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
RC2101 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
rc2101-etched.step/rc2101-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rc2101.step/rc2101.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RealChip datasheet (5 pp, sha256
75e3d59d5161950a, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RC2101
**RealChip** · MOSFETs · SOT-323
RC2101 from RealChip, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the MOSFET, rated for a gate-source voltage VGS of ±8.0 V. |
| 2 | SOURCE | passive | Source terminal of the MOSFET; the datasheet gives a body diode forward voltage VSD of -0.62 to -1.2 V at IS = -0.3 A with VGS = 0 V. |
| 3 | DRAIN | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDS of -20 V and a continuous drain current ID of -1.4 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip |
| Package | SOT-323 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -20 | V | | 1 |
| Gate-Source Voltage | VGS | -8 | | 8 | V | | 1 |
| Continuous Drain Current | ID | | | -1.4 | A | | 1 |
| Pulsed Drain Current | IDM | | | -3 | A | tp=10µs | 1 |
| Power Dissipation | PD | | | 0.29 | W | | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -50 | | 150 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | VDSS | -20 | | | V | VGS = 0V, ID =-250µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±8V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS =-20V, VGS =0V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -0.45 | | -0.7 | V | VDS =VGS, ID =-250µA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 100 | mΩ | VGS =-4.5V, ID =-1.0A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 140 | mΩ | VGS =-2.5V, ID =-0.5A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 210 | mΩ | VGS =-1.8V, ID =-0.3A | 2 |
| Forward Diode Voltage | VSD | | -0.62 | -1.2 | V | VGS =0V, IS=-0.3A | 2 |
| Total Gate Charge | Qg | | 5.5 | 10 | nC | VDS=-10V, VGS=-4.5V, ID=-3.0A | 2 |
| Total Gate Charge | Qg | | 3.3 | 6 | nC | VDS=-10V, VGS=-2.5V, ID=-3.0A | 2 |
| Input Capacitance | Ciss | | 640 | | pF | VDS=-8.0V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 120 | | pF | VDS=-8.0V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 82 | | pF | VDS=-8.0V, VGS=0V, f=1MHz | 2 |
| Turn-On Delay Time | td(on) | | 6.2 | | ns | VGS=-4.5V, VDD=-4.0V, ID=-1.0A, RG=6.2Ω | 2 |
| Rise Time | tr | | 15 | | ns | VGS=-4.5V, VDD=-4.0V, ID=-1.0A, RG=6.2Ω | 2 |
| Turn-Off Delay Time | td(off) | | 26 | | ns | VGS=-4.5V, VDD=-4.0V, ID=-1.0A, RG=6.2Ω | 2 |
| Fall Time | tf | | 18 | | ns | VGS=-4.5V, VDD=-4.0V, ID=-1.0A, RG=6.2Ω | 2 |
| Gate-Source Charge | Qgs | | 0.7 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 1.3 | | nC | VDS=-10V, VGS=-2.5V, ID=-3.0A | 2 |
| Thermal Resistance from Junction to Ambient | RθJA | | 431 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `RC2101`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `rc2101-etched.step` / `rc2101-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rc2101.step` / `rc2101.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [RealChip datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590269426156679168) (5 pp, sha256 `75e3d59d5161950a`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rc2101-datasheet.pdf)