main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 3h ago
viewers rc03n06b: viewers · Ray 3h ago
package.json Publish 0.1.0 · Ray 3h ago
page.json Set visibility: public · Ray 3h ago
rc03n06b-etched.glb Publish 0.1.0 · Ray 3h ago
rc03n06b-etched.step rc03n06b: factory component page (tier=lcsc) · Ray 3h ago
rc03n06b-hero.glb rc03n06b: hero GLB from the etched model (keeps the MPN mark) · Ray 3h ago
rc03n06b-hero.overlay.json Publish 0.1.0 · Ray 3h ago
rc03n06b.glb Publish 0.1.0 · Ray 3h ago
rc03n06b.kicad_mod Publish 0.1.0 · Ray 3h ago
rc03n06b.kicad_sym Publish 0.1.0 · Ray 3h ago
rc03n06b.lbr Publish 0.1.0 · Ray 3h ago
rc03n06b.step Publish 0.1.0 · Ray 3h ago
README.md Publish 0.1.0 · Ray 3h ago

RC03N06B

RealChip(正芯半导体) · MOSFETs · SOT-23

RC03N06B from RealChip(正芯半导体), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±16 V, with threshold VGS(th) of 0.65 V min, 0.95 V typ and 1.55 V max at ID=250 µA.
2 S passive Source; connects to the body diode anode, with continuous drain current of 3 A at TA=25 °C and diode forward voltage of 1.2 V max at IS=3 A.
3 D passive Drain; drain-source voltage rated 60 V, continuous current 3 A at TA=25 °C, pulsed 12 A, RDS(ON) under 100 mΩ at VGS=10 V.

Key specifications

Parameter Value
Manufacturer RealChip(正芯半导体)
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source Voltage VDS 60 V 1
Gate-source Voltage VGS -16 16 V 1
Drain Current ID 3 A TA=25℃ 1
Drain Current ID 2.4 A TA=70℃ 1
Pulsed Drain Current IDM 12 A 1
Total Power Dissipation PD 1.2 W TA=25℃ Steady State 1
Junction and Storage Temperature Range TJ ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-to-Ambient RθJA 105 ℃/W Mounted on 1 in² pad of 2oz copper (footnote B) 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS= 60V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±16V, VDS=0V 2
Gate Threshold Voltage VGS(th) 0.65 0.95 1.55 V VDS= VGS, ID= 250μA 2
Static Drain-Source On-Resistance RDS(ON) 65 100 mΩ VGS= 10V, ID= 3A 2
Static Drain-Source On-Resistance RDS(ON) 75 120 mΩ VGS= 4.5V, ID= 2A 2
Static Drain-Source On-Resistance RDS(ON) 100 200 mΩ VGS= 2.5V, ID= 1A 2
Diode Forward Voltage VSD 0.8 1.2 V IS= 3.0A,VGS=0V 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper mounting surface of the drain pins. RθJL is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 2

CAD (KiCad official)

  • Symbol: RC03N06B
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: rc03n06b-etched.step / rc03n06b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rc03n06b.step / rc03n06b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: RealChip(正芯半导体) datasheet (6 pp, sha256 68f746bcd70b099e, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF