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Contents

README

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RBO40-40G-TR

STMicroelectronics · TVS · D2PAK

RBO40-40G-TR from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Input passive Input (Pin 1) connected to the anode of diode D1 for reverse battery protection, with forward drop VF13 of 1.9 V max at IF = 40 A.
2 GND power_in Ground (Pin 2) connected to the base tab, with the Transil T1/T2 clamping functions referenced to it (breakdown 24 V min, clamping 40 V max).
3 Output passive Output (Pin 3) toward the protected load, with load dump protection by Transil T2 (VBR32 24 V min to 32 V max at 25°C, VCL32 40 V max at IPP = 20 A).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category TVS/Fuse/Board Level Protection
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Breakdown voltage T1 VBR31 22 35 V IR = 1 mA, -40°C < Tamb < +85°C 3
Breakdown voltage T1 at 25°C VBR31 24 32 V IR = 1 mA, Tamb = 25°C 3
Breakdown voltage T2 VBR32 22 35 V IR = 1 mA, -40°C < Tamb < +85°C 3
Breakdown voltage T2 at 25°C VBR32 24 32 V IR = 1 mA, Tamb = 25°C 3
Leakage current T1 IRM31 100 µA VRM = 20 V 3
Leakage current T1 at 25°C IRM31 10 µA VRM = 20 V, Tamb = 25°C 3
Leakage current T2 IRM32 100 µA VRM = 20 V 3
Leakage current T2 at 25°C IRM32 10 µA VRM = 20 V, Tamb = 25°C 3
Clamping voltage T1 VCL31 40 V IPP = 37.5A, Tj initial = 25°C 10/1000µs 3
Clamping voltage T2 VCL32 40 V IPP = 20 A (note 1) 3
Forward voltage D1 VF13 1.9 V IF = 40 A 3
Forward voltage D1 VF13 1.45 V IF = 20A 3
Forward voltage D1 VF13 1 V IF = 1A 3
Forward voltage D1 VF13 0.95 V IF = 100 mA 3
Capacitance D1 C13 3000 pF F = 1MHz VR=0V 3
Capacitance T1 C31 3000 pF F = 1MHz VR = 0V 3
Capacitance T2 C32 8000 pF F = 1MHz VR =0V 3
Temperature coefficient of VBR T1 αT 9 10-4/°C 3
Temperature coefficient of VBR T2 αT 9 10-4/°C 3
Non repetitive surge peak forward current (D1) IFSM 120 A tp = 10 ms 2
DC forward current (D1) IF 40 A Tc = 75°C 2
Peak load dump voltage VPP 80 V 5 pulses (1 minute between each pulse) 2
Peak pulse power between Input and Output (T1) PPP 1500 W Tj initial = 25°C, 10/1000 µs 2
Storage and operating junction temperature range Tstg/Tj -40 150 °C 2
Maximum lead temperature for soldering TL 260 °C during 10 s at 4.5mm from case for TO220-AB 2
Thermal resistance junction to case Rth(j-c) 1 °C/W RBO40-40G 2

CAD (KiCad official)

  • Symbol: RBO40-40G-TR
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: rbo40-40g-tr-etched.step / rbo40-40g-tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rbo40-40g-tr.step / rbo40-40g-tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (10 pp, sha256 9804d96cc6aa22a7, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF