component
RB751V-40-MS
Public Made by Adomby adom
MSKSEMI Switching Diodes, SOD-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 4d ago |
| viewers | 4d ago |
| package.json | 4d ago |
| page.json | 4d ago |
| rb751v-40-ms-etched.glb | 4d ago |
| rb751v-40-ms-etched.step | 4d ago |
| rb751v-40-ms-hero.glb | 4d ago |
| rb751v-40-ms-hero.overlay.json | 4d ago |
| rb751v-40-ms.glb | 4d ago |
| rb751v-40-ms.kicad_mod | 4d ago |
| rb751v-40-ms.kicad_sym | 4d ago |
| rb751v-40-ms.lbr | 4d ago |
| rb751v-40-ms.step | 4d ago |
| README.md | 4d ago |
RB751V-40-MS
MSKSEMI · Switching Diodes · SOD-323
RB751V-40-MS from MSKSEMI, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the Schottky barrier diode; reverse voltage VR is rated 30 V (peak VRM 40 V). |
| 2 | Anode | passive | Anode of the Schottky barrier diode; mean rectifying current IO is rated 30 mA with forward voltage max 0.37 V at IF = 1 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOD-323 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Voltage | VF | 0.37 | V | IF = 1 mA, Ta = 25℃ | 2 | ||
| Reverse Current | IR | 0.5 | µA | VR = 30 V, Ta = 25℃ | 2 | ||
| Peak Reverse Voltage | VRM | 40 | V | Ta = 25℃ | 2 | ||
| Reverse Voltage | VR | 30 | V | Ta = 25℃ | 2 | ||
| Mean Rectifying Current | IO | 30 | mA | Ta = 25℃ | 2 | ||
| Peak Forward Surge Current | IFSM | 200 | mA | 60 Hz for 1 Cyc., Ta = 25℃ | 2 | ||
| Junction Temperature | Tj | 125 | °C | Ta = 25℃ | 2 | ||
| Storage Temperature Range | Tstg | -40 | 125 | °C | Ta = 25℃ | 2 | |
| Capacitance Between Terminals | CT | 2 | pF | VR = 1 V, f = 1 MHz, Ta = 25℃ | 2 |
CAD (KiCad official)
- Symbol:
RB751V-40-MS - Footprint:
Diode_SMD:D_SOD-323 - 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files:
rb751v-40-ms-etched.step/rb751v-40-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rb751v-40-ms.step/rb751v-40-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (4 pp, sha256
9a70e17453165776, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).