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R6020ENX

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ROHM Semicon MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorr6020enxfactory-2.0.0extractor-text

Verified R6020ENX

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: R6020ENX · TO-220F-3 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 15-page datasheet
  • ✓distributor: lcsc C509285, digikey R6020ENX-ND, mouser 755-R6020ENX
  • ✓family: TO-220F-3_Vertical
  • ✓files: 6 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-_wcwpvj5/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 1 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 1 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ r6020enx.kicad_sym✓ r6020enx.kicad_mod✓ r6020enx.step
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R6020ENX

ROHM Semicon · MOSFETs · TO-220F-3

R6020ENX from ROHM Semicon, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; static gate-source voltage limit is ±20V (±30V AC, f>1Hz), with threshold VGS(th) of 2V to 4V at VDS=10V, ID=1mA.
2 Drain passive Drain terminal; drain-source voltage rated 600V, continuous drain current ±20A and pulsed drain current ±60A.
3 Source passive Source terminal with the body diode to drain; continuous source current 20A and pulsed 60A at TC=25°C.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-220F-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS 600 V 1
Continuous drain current ID -20 20 A 1
Pulsed drain current IDP -60 60 A Pw ≤ 10μs, Duty cycle ≤ 1% 1
Gate - Source voltage (Static) VGSS -20 20 V Static 1
Gate - Source voltage (AC) VGSS -30 30 V AC (f＞1Hz) 1
Avalanche current, repetitive IAS 3.4 A 1
Avalanche energy, single pulse EAS 418 mJ L≒70mH, VDD=50V, RG=25Ω, STARTING Tj=25℃ 1
Avalanche energy, repetitive EAS 0.63 mJ L≒70mH, VDD=50V, RG=25Ω, STARTING Tj=25℃ 1
Power dissipation PD 68 W Tc = 25°C 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Reverse diode dv/dt dv/dt 15 V/ns 2
Drain - Source voltage slope dv/dt 50 V/ns VDS = 480V, Tj = 25℃ 2
Thermal resistance, junction - case RthJC 1.8 ℃/W 2
Thermal resistance, junction - ambient RthJA 70 ℃/W 2
Soldering temperature, wavesoldering Tsold 265 ℃ for 10s 2
Drain - Source breakdown voltage V(BR)DSS 600 V VGS = 0V, ID = 1mA 2
Zero gate voltage drain current (Tj = 25°C) IDSS 0.1 100 μA VDS = 600V, VGS = 0V, Tj = 25°C 2
Zero gate voltage drain current (Tj = 125°C) IDSS 1000 μA VDS = 600V, VGS = 0V, Tj = 125°C 2
Gate - Source leakage current IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 2 4 V VDS = 10V, ID = 1mA 2
Static drain - source on-state resistance (Tj = 25°C) RDS(on) 0.17 0.196 Ω VGS = 10V, ID = 9.5A, Tj = 25°C 2
Static drain - source on-state resistance (Tj = 125°C) RDS(on) 0.36 Ω VGS = 10V, ID = 9.5A, Tj = 125°C 2
Gate resistance RG 5.8 Ω f =1MHz, open drain 2
Forward transfer admittance /Yfs/ 5 10 S VDS = 10V, ID = 10A 3
Input capacitance Ciss 1400 pF VGS = 0V 3
Output capacitance Coss 1200 pF VDS = 25V 3
Reverse transfer capacitance Crss 130 pF f = 1MHz 3
Effective output capacitance, energy related Co(er) 56 pF VGS = 0V 3
Effective output capacitance, time related Co(tr) 266 pF VDS = 0V to 480V 3
Turn - on delay time td(on) 35 ns VDD ⋍ 480V,VGS = 10V 3
Rise time tr 53 ns ID = 10A 3
Turn - off delay time td(off) 150 ns RL ⋍ 48Ω 3
Fall time tf 67 ns RG = 10Ω 3
Total gate charge Qg 60 nC VDD ⋍ 480V, ID = 20A, VGS = 10V 3
Gate - Source charge Qgs 8 nC 3
Gate - Drain charge Qgd 33 nC 3
Gate plateau voltage V(plateau) 6.9 V VDD = 480V, ID = 20A 3
Continuous forward current IS 20 A TC = 25℃ 4
Pulse forward current ISP 60 A Pw ≤ 10μs, Duty cycle ≤ 1% 4
Forward voltage VSD 1.5 V VGS = 0V, IS = 20A 4
Reverse recovery time trr 550 ns IS = 20A, di/dt = 100A/μs 4
Reverse recovery charge Qrr 10.4 μC 4
Peak reverse recovery current Irrm 38 A 4

CAD (KiCad official)

  • Symbol: R6020ENX
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (15 pp, sha256 939796074531539c, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF