# R6006KND3TL1

**ROHM Semicon** · MOSFETs · TO-252

R6006KND3TL1 from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal (1); gate-source voltage limited to ±20V static and ±30V AC (f>1Hz), threshold 3.5 to 5.5V at VDS=10V, ID=1mA. |
| 2 | Drain | passive | Drain terminal (2), also the tab; drain-source voltage rated 600V and continuous drain current ±6A at Tc=25°C. |
| 3 | Source | passive | Source terminal (3); body diode source current is 6A continuous and 18A pulsed at Tc=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS |  |  | 600 | V | Ta = 25°C | 1 |
| Continuous drain current | ID | -6 |  | 6 | A | Tc = 25°C | 1 |
| Pulsed drain current | IDP | -18 |  | 18 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 1 |
| Gate-Source voltage static | VGSS | -20 |  | 20 | V | static | 1 |
| Gate-Source voltage AC | VGSS | -30 |  | 30 | V | AC (f>1Hz) | 1 |
| Avalanche current, single pulse | IAS |  |  | 1.1 | A | L≒100mH, VDD=50V, RG=25Ω, starting Tj=25℃ | 1 |
| Avalanche energy, single pulse | EAS |  |  | 65 | mJ | L≒100mH, VDD=50V, RG=25Ω, starting Tj=25℃ | 1 |
| Power dissipation | PD |  |  | 70 | W | Tc = 25°C | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Operating junction and storage temperature range | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction-case | RthJC |  |  | 1.8 | ℃/W | TC=25℃ | 2 |
| Thermal resistance, junction-ambient | RthJA |  |  | 147 | ℃/W |  | 2 |
| Soldering temperature, wave soldering | Tsold |  |  | 265 | ℃ | for 10s | 2 |
| Drain-Source breakdown voltage | V(BR)DSS | 600 |  |  | V | VGS = 0V, ID = 1mA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 100 | μA | VDS = 600V, VGS = 0V, Tj = 25°C | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1000 | μA | VDS = 600V, VGS = 0V, Tj = 125°C | 2 |
| Gate-Source leakage current | IGSS | -100 |  | 100 | nA | VGS = ±20V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 3.5 |  | 5.5 | V | VDS = 10V, ID = 1mA | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 720 | 830 | mΩ | VGS = 10V, ID = 3.0A, Tj = 25°C, pulsed | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 1600 |  | mΩ | VGS = 10V, ID = 3.0A, Tj = 125°C, pulsed | 2 |
| Gate resistance | RG |  | 3.4 |  | Ω | f = 1MHz, open drain | 2 |
| Forward transfer admittance | /Yfs/ | 1.5 | 3 |  | S | VDS = 10V, ID = 3.0A, pulsed | 3 |
| Input capacitance | Ciss |  | 350 |  | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 |
| Output capacitance | Coss |  | 350 |  | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 |
| Reverse transfer capacitance | Crss |  | 20 |  | pF | VGS = 0V, VDS = 25V, f = 1MHz | 3 |
| Turn-on delay time | td(on) |  | 17 |  | ns | VDD ⋍ 300V, VGS = 10V, ID = 3.0A, RL ⋍ 100Ω, RG = 10Ω | 3 |
| Rise time | tr |  | 22 |  | ns | VDD ⋍ 300V, VGS = 10V, ID = 3.0A, RL ⋍ 100Ω, RG = 10Ω | 3 |
| Turn-off delay time | td(off) |  | 30 |  | ns | VDD ⋍ 300V, VGS = 10V, ID = 3.0A, RL ⋍ 100Ω, RG = 10Ω | 3 |
| Fall time | tf |  | 30 |  | ns | VDD ⋍ 300V, VGS = 10V, ID = 3.0A, RL ⋍ 100Ω, RG = 10Ω | 3 |
| Total gate charge | Qg |  | 12 |  | nC | VDD ⋍ 300V, ID = 6A, VGS = 10V | 3 |
| Gate-Source charge | Qgs |  | 3.5 |  | nC | VDD ⋍ 300V, ID = 6A, VGS = 10V | 3 |
| Gate-Drain charge | Qgd |  | 5.6 |  | nC | VDD ⋍ 300V, ID = 6A, VGS = 10V | 3 |
| Gate plateau voltage | V(plateau) |  | 6.2 |  | V | VDD ⋍ 300V, ID = 6A | 3 |
| Source current (body diode) | IS |  |  | 6 | A | TC = 25℃ | 4 |
| Pulsed source current (body diode) | ISP |  |  | 18 | A | TC = 25℃ | 4 |
| Source-Drain voltage | VSD |  |  | 1.5 | V | VGS = 0V, IS = 6A | 4 |
| Reverse recovery time | trr |  | 290 |  | ns | IS = 6A, di/dt = 100A/μs | 4 |
| Reverse recovery charge | Qrr |  | 2.2 |  | μC | IS = 6A, di/dt = 100A/μs | 4 |
| Peak reverse recovery current | Irr |  | 15 |  | A | IS = 6A, di/dt = 100A/μs | 4 |

## CAD (KiCad official)

- Symbol: `R6006KND3TL1`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `r6006knd3tl1-etched.step` / `r6006knd3tl1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `r6006knd3tl1.step` / `r6006knd3tl1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](docs/r6006knd3tl1-datasheet.pdf) (15 pp, sha256 `22b0d2d8129c9613`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/r6006knd3tl1-datasheet.pdf)