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R6004ENDTL

Public Made by Adom

by adom

ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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R6004ENDTL

ROHM Semicon · MOSFETs · TO-252

R6004ENDTL from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-source voltage is guaranteed to ±20V static (±30V AC, f>1Hz) with a threshold of 2V to 4V at VDS=10V, ID=1mA.
2 Drain passive Drain terminal (also the tab); VDSS is 600V and continuous drain current is ±4.0A at TC=25°C.
3 Source passive Source terminal with the body diode to the drain, rated for 4.0A continuous forward current at TC=25°C.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source voltage VDSS 600 V Ta = 25°C 1
Continuous drain current ID -4 4 A TC = 25°C 1
Continuous drain current ID -2.2 2.2 A TC = 100°C 1
Pulsed drain current IDP -8 8 A Pw ≤ 10μs, Duty cycle ≤ 1% 1
Gate-Source voltage, static VGSS -20 20 V Static 1
Gate-Source voltage, AC VGSS -30 30 V AC (f>1Hz) 1
Avalanche current, repetitive IAR 0.8 A L≒100mH, VDD=50V, RG=25Ω, starting Tj=25℃ 1
Avalanche energy, single pulse EAS 46 mJ L≒100mH, VDD=50V, RG=25Ω, starting Tj=25℃ 1
Avalanche energy, repetitive EAR 0.13 mJ L≒100mH, VDD=50V, RG=25Ω, starting Tj=25℃ 1
Power dissipation PD 58 W TC = 25°C 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Reverse diode dv/dt dv/dt 15 V/ns 2
Drain-Source voltage slope dv/dt 50 V/ns VDS = 480V, Tj = 25℃ 2
Thermal resistance, junction-case RthJC 2.2 ℃/W 2
Thermal resistance, junction-ambient RthJA 147 ℃/W Mounted on epoxy PCB FR4 (20mm x 20mm x 0.8mm) 2
Soldering temperature, wave soldering Tsold 265 ℃ for 10s 2
Drain-Source breakdown voltage V(BR)DSS 600 V VGS = 0V, ID = 1mA 2
Zero gate voltage drain current IDSS 0.1 100 μA VDS = 600V, VGS = 0V, Tj = 25°C 2
Zero gate voltage drain current IDSS 1000 μA VDS = 600V, VGS = 0V, Tj = 125°C 2
Gate-Source leakage current IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 2 4 V VDS = 10V, ID = 1mA 2
Static drain-source on-state resistance RDS(on) 0.9 0.98 Ω VGS = 10V, ID = 1.5A, Tj = 25°C 2
Static drain-source on-state resistance RDS(on) 1.36 Ω VGS = 10V, ID = 1.5A, Tj = 125°C 2
Gate resistance RG 16.7 Ω f =1MHz, open drain 2
Forward transfer admittance /Yfs/ 1.5 3 S VDS = 10V, ID = 2A 3
Input capacitance Ciss 250 pF VGS = 0V, VDS = 25V, f = 1MHz 3
Output capacitance Coss 250 pF VGS = 0V, VDS = 25V, f = 1MHz 3
Reverse transfer capacitance Crss 30 pF VGS = 0V, VDS = 25V, f = 1MHz 3
Effective output capacitance, energy related Co(er) 14 pF VGS = 0V, VDS = 0V to 480V 3
Effective output capacitance, time related Co(tr) 57 pF VGS = 0V, VDS = 0V to 480V 3
Turn-on delay time td(on) 22 ns VDD ⋍ 300V, VGS = 10V, ID = 2A, RL ⋍ 150Ω, RG = 10Ω 3
Rise time tr 22 ns VDD ⋍ 300V, VGS = 10V, ID = 2A, RL ⋍ 150Ω, RG = 10Ω 3
Turn-off delay time td(off) 55 ns VDD ⋍ 300V, VGS = 10V, ID = 2A, RL ⋍ 150Ω, RG = 10Ω 3
Fall time tf 40 ns VDD ⋍ 300V, VGS = 10V, ID = 2A, RL ⋍ 150Ω, RG = 10Ω 3
Total gate charge Qg 15 nC VDD ⋍ 300V, ID = 4A, VGS = 10V 3
Gate-Source charge Qgs 2.5 nC VDD ⋍ 300V, ID = 4A, VGS = 10V 3
Gate-Drain charge Qgd 10 nC VDD ⋍ 300V, ID = 4A, VGS = 10V 3
Gate plateau voltage V(plateau) 6.5 V VDD = 300V, ID = 4A 3
Body diode continuous forward current IS 4 A Tc = 25℃ 4
Body diode pulse forward current ISP 8 A Pw ≤ 10μs, Duty cycle ≤ 1% 4
Body diode forward voltage VSD 1.5 V VGS = 0V, IS = 4A 4
Reverse recovery time trr 320 ns IS = 4A, VGS=0V, di/dt = 100A/μs 4
Reverse recovery charge Qrr 2.4 μC IS = 4A, VGS=0V, di/dt = 100A/μs 4
Peak reverse recovery current Imm 15 A IS = 4A, VGS=0V, di/dt = 100A/μs 4

CAD (KiCad official)

  • Symbol: R6004ENDTL
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: r6004endtl-etched.step / r6004endtl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); r6004endtl.step / r6004endtl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (14 pp, sha256 ccd8b30b5b918c92, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF