# QS6K21TR-VB

**VBsemi Elec** · MOSFETs · TSOP-6

QS6K21TR-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of N-channel MOSFET 1, with VGS rated at ±20 V and a gate threshold of 1.0 to 2.0 V. |
| 2 | S2 | passive | Source of N-channel MOSFET 2, as labeled on the top-view package drawing. |
| 3 | G2 | input | Gate of N-channel MOSFET 2, with VGS rated at ±20 V and a gate threshold of 1.0 to 2.0 V. |
| 4 | D2 | passive | Drain of N-channel MOSFET 2, with VDS rated at 40 V and continuous drain current of 3.6 A at TC = 25 °C. |
| 5 | S1 | passive | Source of N-channel MOSFET 1, as labeled on the top-view package drawing. |
| 6 | D1 | passive | Drain of N-channel MOSFET 1, with VDS rated at 40 V and continuous drain current of 3.6 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 40 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 3.6 | A | TC = 25 °C, TJ = 150 °C | 1 |
| Continuous Drain Current | ID |  |  | 2.5 | A | TC = 70 °C, TJ = 150 °C | 1 |
| Continuous Drain Current | ID |  |  | 3 | A | TA = 25 °C, b, c | 1 |
| Continuous Drain Current | ID |  |  | 2 | A | TA = 70 °C, b, c | 1 |
| Pulsed Drain Current | IDM |  |  | 20 | A | 10 µs pulse width | 1 |
| Source-Drain Diode Current | IS |  |  | 2 | A | TC = 25 °C | 1 |
| Source-Drain Diode Current | IS |  |  | 1.4 | A | TA = 25 °C, b, c | 1 |
| Pulsed Source-Drain Current | ISM |  |  | 20 | A |  | 1 |
| Single Pulse Avalanche Current | IAS |  |  | 10 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 5 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD |  |  | 1.3 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 0.9 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | W | TA = 25 °C, b, c | 1 |
| Maximum Power Dissipation | PD |  |  | 0.75 | W | TA = 70 °C, b, c | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA |  | 49 | 62.5 | °C/W | t ≤ 10 s, b, d | 1 |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF |  | 30 | 40 | °C/W | Steady-State | 1 |
| Drain-Source Breakdown Voltage | VDS | 40 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 2 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS |  |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 40 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 40 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 20 |  |  | A | VDS = 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.058 | Ω | VGS = 10 V, ID = 7.0A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.072 | Ω | VGS = 4.5 V, ID = 6.0A | 2 |
| Gate Resistance | Rg | 0.6 | 2.7 | 5.4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 12 | 24 | ns | VDD = 20 V, RL = 2 Ω, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 10 | 20 | ns | VDD = 20 V, RL = 2 Ω, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 13 | 26 | ns | VDD = 20 V, RL = 2 Ω, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 16 | 32 | ns | VDD = 20 V, RL = 2 Ω, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 8 | 16 | ns | VDD = 20 V, RL = 2 Ω, VGEN = 10 V, Rg = 1 Ω | 2 |
| Body Diode Voltage | VSD |  | 0.77 | 1.2 | V | IS = 3 A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 15 | 30 | ns | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 7.5 | 15 | nC | IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | 2.6 | A | TC = 25 °C | 2 |
| Forward Transconductance | gfs |  | 35 |  | S | VDS = 15 V, ID = 7.0A | 2 |
| Input Capacitance | Ciss |  | 280 |  | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss |  | 50 |  | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 22 |  | pF | VDS = 20 V, VGS = 0 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg |  | 9 |  | nC | VDS = 20 V, VGS = 10 V, ID = 7.0 A | 2 |
| Gate-Source Charge | Qgs |  | 1.5 |  | nC |  | 2 |
| Gate-Drain Charge | Qgd |  | 1.5 |  | nC |  | 2 |

## CAD (KiCad official)

- Symbol: `QS6K21TR-VB`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `qs6k21tr-vb-etched.step` / `qs6k21tr-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `qs6k21tr-vb.step` / `qs6k21tr-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/qs6k21tr-vb-datasheet.pdf) (9 pp, sha256 `a7ccee0c8015a866`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/qs6k21tr-vb-datasheet.pdf)