component
QS6K1TR-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+110−8@@ -1,13 +1,120 @@ {+ "schema_version": 1,+ "type": "component", "slug": "qs6k1tr-vb",+ "title": "QS6K1TR-VB",+ "brief": "VBsemi Elec MOSFETs, TSOP-6. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "VBsemi Elec MOSFETs, TSOP-6. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "transistors-thyristors", "qs6k1tr-vb" ],+ "component": {+ "mpn": "QS6K1TR-VB",+ "manufacturer": "VBsemi Elec",+ "package": "TSOP-6",+ "pin_count": 6,+ "category": "Transistors/Thyristors",+ "subcategory": "MOSFETs",+ "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603381065579053056",+ "parts": {+ "symbol": "qs6k1tr-vb.kicad_sym",+ "footprint": "qs6k1tr-vb.kicad_mod",+ "model_3d": "qs6k1tr-vb.glb",+ "model_3d_step": "qs6k1tr-vb.step",+ "lbr": "qs6k1tr-vb.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "G1",+ "type": "input",+ "description": "Gate of MOSFET 1. Insulated gate control input; VGS(th) 0.4 V to 1.5 V (typ), absolute maximum VGS = \u00b112 V. Drive with 4.5 V or higher for full enhancement (RDS(on) = 22 m\u03a9)."+ },+ {+ "number": "2",+ "name": "S2",+ "type": "passive",+ "description": "Source of MOSFET 2. Low-side/source terminal of the second N-channel MOSFET; body-diode anode of MOSFET 2."+ },+ {+ "number": "3",+ "name": "G2",+ "type": "input",+ "description": "Gate of MOSFET 2. Insulated gate control input; VGS(th) 0.4 V to 1.5 V (typ), absolute maximum VGS = \u00b112 V. Drive with 4.5 V or higher for full enhancement (RDS(on) = 22 m\u03a9)."+ },+ {+ "number": "4",+ "name": "D2",+ "type": "passive",+ "description": "Drain of MOSFET 2. High-side/drain terminal of the second N-channel MOSFET; body-diode cathode of MOSFET 2. VDS max = 20 V, ID up to 6.0 A at TC = 25 \u00b0C."+ },+ {+ "number": "5",+ "name": "S1",+ "type": "passive",+ "description": "Source of MOSFET 1. Low-side/source terminal of the first N-channel MOSFET; body-diode anode of MOSFET 1."+ },+ {+ "number": "6",+ "name": "D1",+ "type": "passive",+ "description": "Drain of MOSFET 1. High-side/drain terminal of the first N-channel MOSFET; body-diode cathode of MOSFET 1. VDS max = 20 V, ID up to 6.0 A at TC = 25 \u00b0C."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603381065579053056",+ "pages": null,+ "sha256": "1c193e17a710efb3",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 6,+ "described": 6,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "VBsemi Elec",+ "Package": "TSOP-6",+ "Category": "Transistors/Thyristors",+ "Pins": "6"+ }+ },+ "variants": [+ {+ "mpn": "QS6K1TR-VB",+ "kind": "packaging"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "qs6k1tr-vb"+ ],+ "discovery_pitch": "QS6K1TR-VB (VBsemi Elec) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +132,5 @@ "docs/qs6k1tr-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }