component

QS5U27TR

Public Made by Adom

by adom

ROHM Semicon MOSFETs, SOT-23-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsqs5u27trfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 10d ago
viewers qs5u27tr: viewers · Ray 10d ago
package.json Publish 0.1.0 · Ray 10d ago
page.json Set visibility: public · Ray 10d ago
qs5u27tr-etched.glb Publish 0.1.0 · Ray 10d ago
qs5u27tr-etched.step qs5u27tr: factory component page (tier=mfr) · Ray 10d ago
qs5u27tr-hero.glb qs5u27tr: hero GLB from the etched model (keeps the MPN mark) · Ray 10d ago
qs5u27tr-hero.overlay.json Publish 0.1.0 · Ray 10d ago
qs5u27tr.glb Publish 0.1.0 · Ray 10d ago
qs5u27tr.kicad_mod Publish 0.1.0 · Ray 10d ago
qs5u27tr.kicad_sym Publish 0.1.0 · Ray 10d ago
qs5u27tr.lbr Publish 0.1.0 · Ray 10d ago
qs5u27tr.step Publish 0.1.0 · Ray 10d ago
README.md Publish 0.1.0 · Ray 10d ago

QS5U27TR

ROHM Semicon · MOSFETs · SOT-23-5

QS5U27TR from ROHM Semicon, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the Pch MOSFET; VGSS rating is ±12V with 2.5V drive and VGS(th) of -0.7 to -2.0V.
2 Source passive Source of the Pch MOSFET; continuous body-diode source current is -0.75A.
3 Anode passive Anode of the built-in Schottky barrier diode, which has forward current IF of 1.0A and VF max of 0.45V at 1.0A.
4 Cathode passive Cathode of the built-in Schottky barrier diode, with reverse voltage VR of 20V and repetitive peak reverse voltage VRM of 25V.
5 Drain passive Drain of the Pch MOSFET; VDSS is -20V, continuous drain current is ±1.5A and RDS(on) max is 340mΩ.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-23-5
Category Transistors
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source voltage VDSS -20 V MOSFET 1
Gate-Source voltage VGSS -12 12 V MOSFET 1
Continuous drain current ID -1.5 1.5 A MOSFET 1
Pulsed drain current ID, pulse -6 6 A Pw ≤ 10μs, Duty cycle ≤ 1% 1
Continuous source current (body diode) IS -0.75 A MOSFET 1
Pulsed source current (body diode) IS, pulse -3 A Pw ≤ 10μs, Duty cycle ≤ 1% 1
Power dissipation MOSFET PD 0.9 W/element Mounted on a ceramic board 1
Junction temperature MOSFET Tj 150 ℃ MOSFET 1
Repetitive peak reverse voltage VRM 25 V SBD 2
Reverse voltage VR 20 V SBD 2
Forward current IF 1 A SBD 2
Forward current surge peak IFSM 3 A 60Hz・1 cycle 2
Power dissipation SBD PD 0.7 W/element Mounted on a ceramic board 2
Junction temperature SBD Tj 150 ℃ SBD 2
Power dissipation MOSFET + SBD PD 1.25 W/total Mounted on a ceramic board 2
Storage temperature range Tstg -55 150 ℃ 2
Gate-Source leakage current IGSS 10 μA VGS = ±12V, VDS = 0V (printed ±10) 2
Drain-Source breakdown voltage V(BR)DSS -20 V VGS = 0V, ID = -1mA 2
Zero gate voltage drain current IDSS -1 μA VDS = -20V, VGS = 0V 2
Gate threshold voltage VGS(th) -0.7 -2 V VDS = -10V, ID = -1mA 2
Static drain-source on-state resistance RDS(on) 160 200 mΩ VGS = -4.5V, ID = -1.5A, pulsed 2
Static drain-source on-state resistance RDS(on) 180 240 mΩ VGS = -4V, ID = -1.5A, pulsed 2
Static drain-source on-state resistance RDS(on) 260 340 mΩ VGS = -2.5V, ID = -0.75A, pulsed 2
Transconductance gfs 1 S VDS = -10V, ID = -0.75A, pulsed 2
Body diode forward voltage VSD -1.2 V VGS = 0V, IS = -0.75A, pulsed 3
SBD forward voltage VF 0.45 V IF = 1.0A 4
SBD reverse current IR 200 μA VR = 20V 4
Input capacitance Ciss 325 pF VGS = 0V, VDS = -10V, f = 1MHz 3
Output capacitance Coss 60 pF VGS = 0V, VDS = -10V, f = 1MHz 3
Reverse transfer capacitance Crss 40 pF VGS = 0V, VDS = -10V, f = 1MHz 3
Turn-on delay time td(on) 10 ns VDD ⋍ -15V, VGS = -4.5V, ID = -0.75A, RL = 20Ω, RG = 10Ω 3
Rise time tr 10 ns VDD ⋍ -15V, VGS = -4.5V, ID = -0.75A, RL = 20Ω, RG = 10Ω 3
Turn-off delay time td(off) 35 ns VDD ⋍ -15V, VGS = -4.5V, ID = -0.75A, RL = 20Ω, RG = 10Ω 3
Fall time tf 10 ns VDD ⋍ -15V, VGS = -4.5V, ID = -0.75A, RL = 20Ω, RG = 10Ω 3
Total gate charge Qg 4.2 nC VDD ⋍ -15V, ID = -1.5A, VGS = -4.5V 3
Gate-Source charge Qgs 1 nC VDD ⋍ -15V, ID = -1.5A, VGS = -4.5V 3
Gate-Drain charge Qgd 1.1 nC VDD ⋍ -15V, ID = -1.5A, VGS = -4.5V 3

CAD (KiCad official)

  • Symbol: QS5U27TR
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT-23-5 (KiCad packages3D, STEP)
  • 3D model files: qs5u27tr-etched.step / qs5u27tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); qs5u27tr.step / qs5u27tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (12 pp, sha256 2623104d1f94e1e7, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF