component
QM3116M6-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| qm3116m6-vb-etched.glb | 8d ago |
| qm3116m6-vb-etched.step | 8d ago |
| qm3116m6-vb-hero.glb | 8d ago |
| qm3116m6-vb-hero.overlay.json | 8d ago |
| qm3116m6-vb.glb | 8d ago |
| qm3116m6-vb.kicad_mod | 8d ago |
| qm3116m6-vb.kicad_sym | 8d ago |
| qm3116m6-vb.lbr | 8d ago |
| qm3116m6-vb.step | 8d ago |
| README.md | 8d ago |
| verification.json | 8d ago |
QM3116M6-VB
VBsemi Elec · MOSFETs · DFN5x6-8
QM3116M6-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the package limits continuous source-drain diode current to 90 A at TC = 25 °C. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the package limits continuous source-drain diode current to 90 A at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the package limits continuous source-drain diode current to 90 A at TC = 25 °C. |
| 4 | G | input | Gate terminal of the N-channel MOSFET with a maximum gate-source voltage of ±20 V and a threshold of 1.5 V min to 2.5 V max at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET with a maximum drain-source voltage of 30 V and a pulsed drain current of 300 A. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET with a maximum drain-source voltage of 30 V and a pulsed drain current of 300 A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET with a maximum drain-source voltage of 30 V and a pulsed drain current of 300 A. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET with a maximum drain-source voltage of 30 V and a pulsed drain current of 300 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
QM3116M6-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
qm3116m6-vb-etched.step/qm3116m6-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);qm3116m6-vb.step/qm3116m6-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
8bfeda1da1953e63, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).